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Abstract: In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900Å thicknesses are thermally evaporated on Si(111) substrates, part of them had previously been implanted with antimony ions of 5×1014 or 5×1015 at.cm-2 doses. The samples are heat-treated in vacuum at temperatures in the range 200–700°C for various times. The results show the growth and formation of Cu3Si and Cu4Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb+ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu4Si phase whereas the Cu3Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed. [Copyright &y& Elsevier]

Abstract: The alkaline platinum hydrides are considered the most promising as hydrogen storage materials. The alloying ability of crystal, elastic constants and related parameters, electronic and optical properties have been studied using pseudo-potential plane–wave method based on the density functional theory. The investigated compounds show a weaker resistance to compression along the principal a-axis and their resistance to shear deformation is lower than the resistance to the unidirectional compression. The band structure indicates that A2PtH6 (A=K, Rb and Cs) are X–X direct gap semiconductors. The effective electron mass at equilibrium has been predicted towards X–Γ, X–W and L–W directions. The strong hybridization between Pt-d and H-s states in the upper valence band translates the existence of covalent bonding character in these compounds. The static optical dielectric constant is inverse proportional to the fundamental gap. [Copyright &y& Elsevier]