1. Controllable Valley Polarization Using Silicene Double Line Defects Due to Rashba Spin-Orbit Coupling
- Author
-
ChongDan Ren, Benhu Zhou, Shaoyin Zhang, Weitao Lu, Yunfang Li, Hongyu Tian, and Jing Liu
- Subjects
Silicene ,Line defect ,Rashba spin orbit coupling ,Valley polarization ,Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Abstract We theoretically investigate the valley polarization in silicene with two parallel line defects due to Rashba spin-orbit coupling (RSOC). It is found that as long as RSOC exceeds the intrinsic spin-orbit coupling (SOC), the transmission coefficients of the two valleys oscillate with the same periodicity and intensity, which consists of wide transmission peaks and zero-transmission plateaus. However, in the presence of a perpendicular electric field, the oscillation periodicity of the first valley increases, whereas that of the second valley shortens, generating the corresponding wide peak-zero plateau regions, where perfect valley polarization can be achieved. Moreover, the valley polarizability can be changed from 1 to −1 by controlling the strength of the electric field. Our findings establish a different route for generating valley-polarized current by purely electrical means and open the door for interesting applications of semiconductor valleytronics.
- Published
- 2019
- Full Text
- View/download PDF