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3. Long-period suspended silicon Bragg grating filter for hybrid near- and mid-infrared operation

Author

Alonso-Ramos, Carlos, Roux, Xavier Le, Benedikovic, Daniel, Vakarin, Vladyslav, Duran-Valdeiglesias, Elena, Perez-Galacho, Diego, Cassan, Eric, Marris-Morini, Delphine, Cheben, Pavel, and Vivien, Laurent

Subjects
Physics - Optics
Abstract

The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors. Nevertheless, due to their comparatively large index contrast and cross-sections, MIR Si strip waveguides are multi-mode at NIR wavelengths, hindering device implementation. Here we present, for the first time, an integrated Bragg grating waveguide filter for hybrid near- and mid-infrared operation. Specifically, the filter is implemented in a single-etch suspended silicon corrugated waveguide with an effectively single-mode operation in NIR region for a waveguide cross-section as large as 0.5 um x 1.1 um. At the same time, the waveguide supports single-mode propagation in MIR region. We demonstrate a long-period waveguide Bragg grating yielding a sharp third-order Bragg resonance for the fundamental waveguide mode and radiating the higher order modes. We experimentally demonstrate a notch filter with a 4nm bandwidth and 40 dB extinction ratio with a temperature-dependent Bragg wavelength shift of 70pm/K.

Published
2016

5. Recent advances in integrated photonics with subwavelength and resonant metamaterials

Author

Schmid, Jens H., primary, Cheben, Pavel, additional, Zhang, Jianhao, additional, Milanizadeh, Maziyar, additional, Bin-Alam, Saad, additional, Xu, Dan-Xia, additional, Cheriton, Ross, additional, Vachon, Martin, additional, Wang, Shurui, additional, Ma, Rubin, additional, Fraser, William, additional, Khajavi, Shahrzad, additional, Ye, Winnie N., additional, Ginel Moreno, Pablo, additional, Luque-González, Jose-Manuel, additional, Fernández Hinestrosa, Alejandro, additional, Sánchez-Postigo, Alejandro, additional, Halir, Robert, additional, Wangüemert-Pérez, J. Gonzalo, additional, Ortega-Moñux, Alejandro, additional, Molina-Fernández, Íñigo, additional, Mokkedem, Zindine, additional, Melati, Daniele, additional, Alonso-Ramos, Carlos, additional, Vivien, Laurent, additional, Korcek, Radovan, additional, Benedikovic, Daniel, additional, Naraine, Cameron, additional, Bradley, Jonathan, additional, Sirmaci, Yunus D., additional, and Staude, Isabelle, additional

Published
2024
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7. High-efficiency off-chip grating couplers for silicon nitride photonics

Author

Korcek, Radovan, primary, Fraser, William, additional, Wilmart, Quentin, additional, Medina Quiroz, David, additional, Litvik, Jan, additional, Zubor, Lukas, additional, Krehel, Tomas, additional, Edmond, Samson, additional, Milanizadeh, Maziyar, additional, Schmid, Jens H., additional, Cheben, Pavel, additional, Ye, Winnie N., additional, Vivien, Laurent, additional, Alonso-Ramos, Carlos, additional, and Benedikovic, Daniel, additional

Published
2024
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8. Efficient single-etch surface grating couplers in silicon nitride platforms for telecom and datacom wavebands

Author

Korcek Radovan, Fraser William, Medina Quiroz David, Cheben Pavel, Edmond Samson, Schmid Jens H., Milanizadeh Mazyiar, Alonso-Ramos Carlos, Vivien Laurent, Ye Winnie N., and Benedikovic Daniel

Subjects
Physics, QC1-999
Abstract

We present designs and experiments of single-etched amorphous silicon (α-Si) surface grating couplers on a silicon nitride (SiN) waveguide, operating at the telecom (C-band) and datacom (O-band) wavebands. SiN-only grating couplers demonstrate experimental coupling loss of -3.9 dB at 1.55 μm wavelength with a 1-dB bandwidth of 37 nm. Utilizing the hybrid α-Si/SiN platform with subwavelength grating structure, we obtain improved coupling performances, with the optimized fiber-chip coupling loss of -2.0 dB and a 1-dB spectral bandwidth of 42 nm centered at 1.31 μm.

Published
2023
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9. Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

Author

Benedikovic Daniel, Virot Léopold, Aubin Guy, Hartmann Jean-Michel, Amar Farah, Le Roux Xavier, Alonso-Ramos Carlos, Cassan Éric, Marris-Morini Delphine, Fédéli Jean-Marc, Boeuf Frédéric, Szelag Bertrand, and Vivien Laurent

Subjects
group-iv nanophotonicss, integrated optoelectronics and communications, optical photodetector, Physics, QC1-999
Abstract

Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

Published
2020
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10. Integrated optical phased arrays with circular architecture on a silicon platform

Author

Benedikovic Daniel, Liu Qiankun, Sanchez-Postigo Alejandro, Atieh Ahmad, Smy Tom, Cheben Pavel, and Ye Winnie N.

Subjects
Physics, QC1-999
Abstract

Optical phased arrays (OPAs) are now at the forefront of photonic research as a key beam steering technology for myriad of photonic applications, including in light detection and ranging (LIDAR), communications, and metrology, among others. Integrated OPAs with narrow beam widths and wide-angle steering are in critical need, especially for LIDARs in autonomous vehicle, drone and airplane navigation, or satellites. In this work, we numerically study the performances of OPAs having a circular layout arrangement. Compared to recently available solutions with 1D linear or 2D rectangular arrays, the proposed circular OPAs are poised to deliver effective suppression of the grating sidelobes, while improving beam steering range and obtaining narrower beamwidths. We demonstrate 110-element circular arrays with sidelobe suppression better than 10 dB and an angular beamwidth of 0.5°. Under a monochromatic operation at a 1550 nm wavelength, such array provides a solid angle steering range of 0.21π-sr, with a perspective for performance improvement by using large number of OPA elements and operating under broader spectral range.

Published
2022
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11. Germanium-based integrated photonics from near- to mid-infrared applications

Author

Marris-Morini Delphine, Vakarin Vladyslav, Ramirez Joan Manel, Liu Qiankun, Ballabio Andrea, Frigerio Jacopo, Montesinos Miguel, Alonso-Ramos Carlos, Le Roux Xavier, Serna Samuel, Benedikovic Daniel, Chrastina Daniel, Vivien Laurent, and Isella Giovanni

Subjects
silicon photonics, germanium, datacom, mid-infrared, absorption spectroscopy, Physics, QC1-999
Abstract

Germanium (Ge) has played a key role in silicon photonics as an enabling material for datacom applications. Indeed, the unique properties of Ge have been leveraged to develop high performance integrated photodectors, which are now mature devices. Ge is also very useful for the achievement of compact modulators and monolithically integrated laser sources on silicon. Interestingly, research efforts in these domains also put forward the current revolution of mid-IR photonics. Ge and Ge-based alloys also present strong advantages for mid-infrared photonic platform such as the extension of the transparency window for these materials, which can operate at wavelengths beyond 8 μm. Different platforms have been proposed to take benefit from the broad transparency of Ge up to 15 μm, and the main passive building blocks are now being developed. In this review, we will present the most relevant Ge-based platforms reported so far that have led to the demonstration of several passive and active building blocks for mid-IR photonics. Seminal works on mid-IR optical sensing using integrated platforms will also be reviewed.

Published
2018
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13. Silicon-based surface gratings for efficient fiber-chip and free-space beam coupling

Author

Benedikovic, Daniel, primary, Fraser, William, additional, Korcek, Radovan, additional, Xin, Xiaochen, additional, Karimi Yonjali, Yousef, additional, Alonso-Ramos, Carlos, additional, Vivien, Laurent, additional, Cheben, Pavel, additional, Schmid, Jens H., additional, Milanizadeh, Maziyar, additional, Smy, Tom J., additional, Atieh, Ahmad K., additional, and Ye, Winnie N., additional

Published
2023
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14. Subwavelength control of light and sound in silicon

Author

Zhang, Jianhao, primary, Nuño Ruano, Paula, additional, Dinh, Thi Thuy Duong, additional, González-Andrade, David, additional, Medina Quiroz, David, additional, Benedikovic, Daniel, additional, Cheben, Pavel, additional, Bouville, David, additional, Lanzillotti Kimura, Daniel, additional, Marris-Morini, Delphine, additional, Cassan, Eric, additional, Vivien, Laurent, additional, and Alonso-Ramos, Carlos, additional

Published
2023
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16. Building blocks of silicon photonics

Author

Vivien, Laurent, primary, Baudot, Charles, additional, Bœuf, Frédéric, additional, Szelag, Bertrand, additional, Alonso-Ramos, Carlos, additional, Benedikovic, Daniel, additional, Marris-Morini, Delphine, additional, Cassan, Eric, additional, Guerber, Sylvain, additional, Douix, Maurin, additional, Virot, Léopold, additional, Rodriguez, Philippe, additional, Nemouchi, Fabrice, additional, Jany, Christophe, additional, Ben Bakir, Badhise, additional, Le Roux, Xavier, additional, Perez-Galacho, Diego, additional, Berciano, Mathias, additional, Marcaud, Guillaume, additional, Charlet, Ismael, additional, Deniel, Lucas, additional, Lafforgue, Christian, additional, Zhang, JianHao, additional, Serna, Samuel, additional, Damas, Pedro, additional, Do, Phuong T., additional, Doser, Dorian, additional, Durel, Jocelyn, additional, Ghegin, Elodie, additional, Vakarin, Vladyslav, additional, Ramirez, Joan-Manel, additional, Monfray, Stéphane, additional, Cremer, Sébastien, additional, Duran Valdeiglesias, Elena, additional, Sanchez, Loic, additional, Fournel, Franck, additional, Brianceau, Pierre, additional, and Hassan, Karim, additional

Published
2019
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18. Subwavelength silicon nanostructuration for nonlinear and optomechanic applications

Author

Dinh, Thi Thuy Duong, primary, Zhang, Jianhao, additional, Nuño Ruano, Paula, additional, González-Andrade, David, additional, Le Roux, Xavier, additional, Montesinos Ballester, Miguel, additional, Lafforgue, Christian, additional, Medina Quiroz, David, additional, Benedikovic, Daniel, additional, Cheben, Pavel, additional, Bouville, David, additional, Lanzillotti Kimura, Norberto Daniel, additional, Marris-Morini, Delphine, additional, Cassan, Eric, additional, Vivien, Laurent, additional, and Alonso Ramos, Carlos, additional

Published
2023
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21. Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED

Author

Benedikovic Daniel, Virot Leopold, Aubin Guy, Hartmann Jean-Michel, Amar Farah, Le Roux Xavier, Alonso-Ramos Carlos, Dado Milan, Cassan Eric, Marris-Morini Delphine, Fedeli Jean-Marc, Boeuf Frederic, Szelag Bertrand, and Vivien Laurent

Subjects
Physics, QC1-999
Abstract

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.

Published
2021
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27. Controlling the Modal Confinement in Silicon Nanophotonic Waveguides through Dual‐Metamaterial Engineering.

Author

Dinh, Thi Thuy Duong, Le Roux, Xavier, Zhang, Jianhao, Montesinos‐Ballester, Miguel, Lafforgue, Christian, Benedikovic, Daniel, Cheben, Pavel, Cassan, Eric, Marris‐Morini, Delphine, Vivien, Laurent, and Alonso‐Ramos, Carlos

Subjects
DEGREES of freedom, QUALITY factor, REFRACTIVE index, SILICON, ENGINEERING, TROPOSPHERIC ozone
Abstract

Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness, resulting in limited flexibility in evanescent field control. Here, a new strategy that exploits metamaterial engineering of the waveguide core and cladding is proposed and demonstrated to control the index contrast in the vertical and horizontal directions, independently. The proposed dual‐material geometry yields a substantially increased calculated bulk sensitivity in the air (0.35 RIU [refractive index unit]/RIU) compared to the best case scenario for a strip waveguide (0.3 RIU/RIU). To experimentally demonstrate the potential of this approach, dual‐metamaterial ring resonators operating with the transverse‐magnetic polarized mode in 220‐nm‐thick waveguides with air as upper‐cladding are implemented. Micro‐ring resonators implemented with strip and dual‐metamaterial waveguides exhibit the same measured quality factors, near 30 000. Having similar measured quality factors and better calculated bulk sensitivity than strip waveguides, the proposed dual‐metamaterial geometry stands as a promising approach to control modal confinement in silicon waveguides. [ABSTRACT FROM AUTHOR]

Published
2023
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28. Performant on-chip photonic detectors with lateral p-i-n silicon-germanium heterojunctions

Author

Benedikovic, Daniel, primary, Virot, Léopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Le Roux, Xavier, additional, Alonso-Ramos, Carlos, additional, Cassan, Eric, additional, Marris-Morini, Delphine, additional, Boeuf, Frederic, additional, Szelag, Bertrand, additional, and Vivien, Laurent, additional

Published
2022
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29. Silicon-Germanium Avalanche Receivers With fJ/bit Energy Consumption

Author

Benedikovic, Daniel, primary, Virot, Leopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Roux, Xavier Le, additional, Alonso-Ramos, Carlos, additional, Cassan, Earic, additional, Marris-Morini, Delphine, additional, Boeuf, Frederic, additional, Fedeli, Jean-Marc, additional, Szelag, Bertrand, additional, and Vivien, Laurent, additional

Published
2022
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31. Silicon-Germanium Heterojunction Photodetectors for On-Chip Optoelectronics and Communications

Author

Benedikovic, Daniel, primary, Virot, Leopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Le Roux, Xavier, additional, Alonso-Ramos, Carlos, additional, Marris-Morini, Delphine, additional, Cassan, Eric, additional, Boeuf, Frederic, additional, Fedeli, Jean-Marc, additional, Szelag, Bertrand, additional, and Vivien, Laurent, additional

Published
2021
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34. Silicon-germanium p-i-n photodiodes with double heterojunction: high-speed operation at 10 Gbps and beyond

Author

Benedikovic, Daniel, Virot, Léopold, Aubin, Guy, Hartmann, Jean-Michel, Amar, Farah, Szelag, Bertrand, Le Roux, Xavier, Alonso-Ramos, Carlos, Crozat, Paul, Cassan, Eric, Marris-Morini, Delphine, Baudot, Charles, Boeuf, Frédéric, Fédéli, Jean-Marc, Kopp, Christophe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015), Benedikovic, Daniel, and Low power consumption silicon optoelectronics based on strain and refractive index engineering - POPSTAR - - H20202015-10-01 - 2020-10-01 - 647342 - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, germanium photodiodes, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, silicon-on-insulator platform, high-speed optical communications, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; We present recent results on high-speed waveguide p-in photodetectors with lateral hetero-structured Silicon-Germanium-Silicon (Si-Ge-Si) junctions monolithically integrated on Silicon-on-Insulator substrates. Optical photodetectors leverage a unique integration strategy, combining butt-waveguide-coupling and lateral Si-Ge-Si p-in hetero-junctions. Fabrication is then easier, more robust and fully compatible with available Si-foundry processes. Under a low-voltage operation, 1 µm wide devices have dark currents of at most 150 nA, high responsivity of 1.2 A/W, and-3dB cutoff frequency of 12 GHz. Furthermore, an errorless detection is experimentally achieved for a conventional 10 Gbps data rate, with power sensitivity down to-13.9 dBm with a bit-error-rate (BER) of 10-9. Moreover, under avalanche operation, a 0.8 µm wide p-in diode offers attractive improvements in opto-electrical performances. In particular, initial results show that device responsivity is enhanced from 0.42 A/W up to 2.79 A/W thanks to an avalanche multiplication gain of 6.7. The cutoff frequency remains larger than 17 GHz with a gain of 10.6, resulting in a gain-bandwidth product greater than 180 GHz. These promising results also yield error-free communication at 10-9 with 28 Gbps signal, providing power sensitivities down to-12.7 dBm at 10-9 BER. These results make hetero-structured p-in photodetectors appealing choice for high-bit-rate systems in integrated silicon nanophotonics.

Published
2020

36. High-speed germanium p-i-n avalanche photodetectors on silicon

Author

Benedikovic, Daniel, primary, Virot, Leopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Szelag, Bertrand, additional, Le Roux, Xavier, additional, Alonso-Ramos, Carlos, additional, Crozat, Paul, additional, Cassan, Eric, additional, Boeuf, Frederic, additional, Fedeli, Jean-Marc, additional, Kopp, Christophe, additional, and Vivien, Laurent, additional

Published
2021
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38. Analysis of second order nonlinearity in strained silicon waveguides

Author

Lafforgue, Christian, Berciano, Mathias, Marcaud, Guillaume, Le-Roux, Xavier, Alonso-Ramos, Carlos, Pérez-Galacho, Diego, Benedikovic, Daniel, Vakarin, Vladyslav, Ruiz-Caridad, Alicia, Crozat, Paul, Marris-Morini, Delphine, Cassan, Eric, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), SPIE, European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015), Benedikovic, Daniel, and Low power consumption silicon optoelectronics based on strain and refractive index engineering - POPSTAR - - H20202015-10-01 - 2020-10-01 - 647342 - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Optics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. Numerous demonstrations of optoelectronic devices have been reported including plasma dispersion effect based optical modulators, germanium photodetectors or III-V laser on silicon (Si) platform. Nevertheless, the strong evolution of silicon photonics towards very low power consumption circuits call upon new strategies to be developed, especially for power-hungry components such as optical modulators. One strategy is to use Pockels effect in Si waveguides. However, bulk Si is a centrosymmetric semiconductor, which cannot exhibit any second order optical nonlinearities. Nonetheless, under a strain gradient, generated by depositing a stressed layer, typically by silicon nitride (SiN)on Si waveguides, this restriction vanishes. Over the years, many attempts to characterize the second order nonlinear susceptibility tensor through Pockels effect have been performed. However, the semiconductor nature of Si, hinders correct analysis. Indeed, carriers in Si, at the Si/SiN interface and in SiN have a screening effect when performing electro-optic modulation. This yields to the fact that the first works in the field largely overestimate the second order nonlinear susceptibility. On the other hand, it is also possible to characterize the second order susceptibility tensor through second harmonic generation (SHG). This way, we are able to highlight a second order nonlinearity effect, yet without applying an external field which would suffer from the screening effect from the Si/SiN interface. In this study we explore the design of SHG devices using dispersion engineered strained silicon waveguides. Modal methods exploiting both the phase-matching and thequasi-phase-matching approach taking into account the overlaps between strain gradient profiles and optical modes. Recent experimental result on SHG in strained silicon waveguides will also be discussed.

Published
2019

39. Fast electro-optics effect in strained silicon waveguide

Author

Berciano, Mathias, Marcaud, Guillaume, Le Roux, Xavier, Carlos, Alonso-Ramos, Lafforgue, Christian, Damas, Pedro, Pérez-Galacho, Diego, Benedikovic, Daniel, Vakarin, Vladyslav, Ruiz-Caridad, Alicia, Crozat, Paul, Marris-Morini, Delphine, Cassan, Eric, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015), Benedikovic, Daniel, and Low power consumption silicon optoelectronics based on strain and refractive index engineering - POPSTAR - - H20202015-10-01 - 2020-10-01 - 647342 - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Optics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, Silicon is a centrosymmetric semiconductor, which cannot exhibit any second order optical nonlinearities, like second harmonic generation nor the linear electro-optic effect (i.e. Pockels effect). Nonetheless, by means of strain gradients, generated by depositing a stressed layer (typically SiN) on silicon waveguides, this restriction vanishe. Hence, for years, many attempts on characterizing the second order nonlinear susceptibility tensor through Pockels effect have been performed. However, due to the semiconductor nature of silicon, its analysis has been wrongly carried out. Indeed, carriers in Si, at the Si/SiN interface and in SiN have a screening effect when performing electro-optic modulation, which have led to overestimations of the second order nonlinear susceptibility and eventually rose a controversy on the real existence of Pockels effect in strained silicon waveguides. Here, we report on unambiguous experimental characterization of Pockels effect in the microwave domain, by taking advantage of the inherent limitation of carrier effect in high frequency range. Recent results on high-speed measurements will be presented and discussed. Both charge effects and Pockels effect induced under an electric field will be also analysed.

Published
2019

40. Building blocks of silicon photonics

Author

Vivien, Laurent, Baudot, Charles, Boeuf, Frederic, Szelag, Bertrand, Alonso-Ramos, Carlos, Benedikovic, Daniel, Marris-Morini, Delphine, Cassan, Eric, Guerber, Sylvain, Douix, Maurin, Virot, Léopold, Rodriguez, Philippe, Nemouchi, Fabrice, Jany, Christophe, Bakir, Badhise, Le Roux, Xavier, Perez-Galacho, Diego, Berciano, Mathias, Marcaud, Guillaume, Charlet, Ismael, Deniel, Lucas, Lafforgue, Christian, Zhang, Jianhao, Serna, Samuel, Damas, Pedro, Do, Phuong, Doser, Dorian, Durel, Jocelyn, Ghegin, Elodie, Vakarin, Vladyslav, Ramirez, Joan-Manel, Monfray, Stéphane, Cremer, Sébastien, Duran Valdeiglesias, Elena, Sanchez, Loic, Fournel, Franck, Brianceau, Pierre, Hassan, Karim, Benedikovic, Daniel, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), and THALES-ALCATEL

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

41. Strain-induced electro-optical effect in silicon Mach-Zehnder modulators

Author

Lafforgue, Christian, Berciano, Mathias, Deniel, Lucas, Marcaud, Guillaume, Le Roux, Xavier, Alonso-Ramos, Carlos, Benedikovic, Daniel, Ruiz-Caridad, Alicia, Crozat, Paul, Marris-Morini, Delphine, Cassan, Eric, Vivien, Laurent, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Institut d'électronique fondamentale (IEF)

Subjects
modulation, nonlinear optics, Silicon photonics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Pockels effect
Abstract

International audience; Due to the strong evolution of data transmission worldwide, silicon photonics needs to provide low power consuming and ultra-fast modulators. Pockels effect is known to answer both these demands. However, silicon is a centrosymmetric crystal, which makes it inadequate to use Pockels effect. Nonetheless, by straining a silicon waveguide, it is possible to unlock second order nonlinear optics effects, enabling electro-optic modulation through Pockels effect. In our work, we experimentally demonstrated a high-speed strain-induced Pockels effect based electro-optic modulation in a Mach-Zehnder silicon modulator. We also present a complete analysis of Pockels, Kerr, and free carriers effects.

Published
2020

42. 28 Gbps silicon-germanium hetero-structure avalanche photodetectors (Contributed paper)

Author

Benedikovic, Daniel, Virot, Léopold, Aubin, Guy, Hartmann, Jean-Michel, Amar, Farah, Szelag, Bertrand, Le Roux, Xavier, Alonso-Ramos, Carlos, Crozat, Paul, Cassan, Eric, Marris-Morini, Delphine, Baudot, Charles, Boeuf, Frédéric, Fédéli, Jean-Marc, Kopp, Christophe, Vivien, Laurent, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
avalanche mode operation, optical photodetectors, germanium, silicon photonics, pin mode operation, gain-bandwidth product, complementary metal-oxide semiconductor technology, high-speed links, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, impact ionization, gain, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud services. Moreover, a number of nanophotonic functions are now available on a single chip, as they take advantages of silicon-foundry process maturity and epitaxial germanium integration. Optical photodetectors are key building blocks in the library of group-IV components and their performances are quite successful nowadays. In particular, silicon-germanium waveguide-integrated photodetectors are fixing new standards for next generation of on-chip interconnects in terms of compactness, speed, power consumption and cost. Indeed, conventional pin photodetectors yield good responsivities (~1 A/W in a 1.5 µm wavelength range), high bandwidths (~50 GHz), and dark currents well below 1 µA. Despite recent advances, their optical power sensitivities remain rather modest and speeds are limited to 25 Gbps only, however. Compensating for the insufficient photodetector sensitivity requires higher transmitter output powers and therefore higher energy consumption. Additional energy savings can be obtained by eliminating receiver electronics. Alternatively, an appealing approach is to exploit device structures with an internal multiplication gain to lower even more the power budget and improve energy efficiency of chip-based optical links. In this work, we report on waveguide-integrated photodetectors with lateral silicon-germanium-silicon heterojunctions. Here, we present avalanche photodetectors fabricated on 200-mm silicon-on-insulator wafers using complementary metal-oxide-semiconductor-compatible processes. Devices operate in the low-gain-regime to facilitate high-speed link operations at 1.55 µm wavelengths. An error-free signal detection was achieved at 28 Gbps, with power sensitivity of-11 dBm for 10-9 bit-error-rate, which is a relevant link rate for emerging chip-scale optical interconnects.

Published
2020

43. Demonstration of High-Speed Pockels Effect in Strained Si Waveguides

Author

Lafforgue, Christian, Berciano, Mathias, Deniel, Lucas, Marcaud, Guillaume, Le Roux, Xavier, Alonso-Ramos, Carlos, Benedikovic, Daniel, Vakarin, Vladyslav, Ruiz-Caridad, Alicia, Crozat, Paul, Marris-Morini, Delphine, Cassan, Eric, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Optical Society of America, and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; We report on the first demonstration of high-speed optical modulation based on Pockels effect in strained silicon waveguides. Bandwidths higher than 20GHz and low insertion loss have been achieved at a wavelength of 1550nm.

Published
2020

46. List of contributors

Author

Ahmadivand, Arash, Alhalaili, Badriyah, Bartolo-Perez, Cesar, Benedikovič, Daniel, Bowers, John E., Brockherde, Werner, Caironi, Mario, Cola, Adriano, Convertino, Annalisa, Currie, Marc, Dianat, Pouya, Durini, Daniel, Fuentes-Hernandez, Canek, Ghandiparsi, Soroush, Heuser, Thomas A., Hosticka, Bedrich J., Islam, M. Saif, Karaagac, Hakan, Karabiyik, Mustafa, Leo, Gabriella, Lo, Guo-Qiang, Mayet, Ahmed S., Mcphillips, Lisa N., Miller, Ruth A., Nabet, Bahram, Nagatsuma, Tadao, Natali, Dario, Ombaba, Matthew M., Pala, Nezih, Paschen, Uwe, Pecunia, Vincenzo, Peksu, Elif, Persano, Anna, Piels, Molly, Quaranta, Fabio, Satterthwaite, Peter F., Senesky, Debbie G., So, Hongyun, Yalamarthy, Ananth Saran, and Zhu, Shiyang

Published
2023
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47. 40 Gbps heterostructure germanium avalanche photo receiver on a silicon chip

Author

Benedikovic, Daniel, primary, Virot, Léopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Le Roux, Xavier, additional, Alonso-Ramos, Carlos, additional, Cassan, Eric, additional, Marris-Morini, Delphine, additional, Crozat, Paul, additional, Boeuf, Frédéric, additional, Fédéli, Jean-Marc, additional, Kopp, Christophe, additional, Szelag, Bertrand, additional, and Vivien, Laurent, additional

Published
2020
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48. Ultra-wideband flat anomalous dispersion in nanostructured silicon membrane waveguides (Conference Presentation)

Author

Dinh, Thi Thuy Duong, primary, Zhang, Jianhao, additional, Montesinos, Miguel, additional, Le Roux, Xavier, additional, Lafforgue, Christian, additional, Benedikovic, Daniel, additional, Cheben, Pavel, additional, Cassan, Eric, additional, Marris-Morini, Delphine, additional, Maisons, Gregory, additional, Carras, Mathieu, additional, Cremer, Sebastien, additional, Monfray, Stephane, additional, Boeuf, Frederic, additional, Vivien, Laurent, additional, and Alonso-Ramos, Carlos A., additional

Published
2020
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49. Waveguide Bragg gratings for photonic noise suppression in silicon photon-pair sources (Conference Presentation)

Author

Oser, Dorian, primary, Le Roux, Xavier, additional, Mazeas, Florent, additional, Pérez-Galacho, Diego, additional, Benedikovic, Daniel, additional, Durán-Valdeiglesias, Elena, additional, Vakarin, Vladyslav, additional, Alibart, Olivier, additional, Cheben, Pavel, additional, Tanzilli, Sebastien, additional, Labonté, Laurent, additional, Marris-Morini, Delphine, additional, Cassan, Eric, additional, Vivien, Laurent, additional, and Alonso-Ramos, Carlos A., additional

Published
2020
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50. Silicon chip-integrated fiber couplers with sub-decibel loss

Author

Benedikovic, Daniel, primary, Alonso-Ramos, Carlos A., additional, Guerber, Sylvain, additional, Dupre, Cecilia, additional, Szelag, Bertrand, additional, Le Roux, Xavier, additional, Cheben, Pavel, additional, Fowler, Daivid, additional, Marcaud, Guillaume, additional, Vakarin, Vladyslav, additional, Pérez-Galacho, Diego, additional, Marris-Morini, Delphine, additional, Cassan, Eric, additional, Baudot, Charles, additional, Boeuf, Frédéric, additional, and Vivien, Laurent, additional

Published
2020
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