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This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs with different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs are grown at a lower temperature (370 °C) than the usual capping temperature for InAs QDs (510 °C). The study finds that GaAs capping at low temperatures reduces QD decomposition and leads to larger pyramidal dots but also increases the threading dislocation (TD) density. When adding Bi to the capping layer, a significant reduction in TD density is observed, but unexpected structural changes also occur. Increasing the Bi flux does not increase the Bi content but rather the layer thickness. The maximum Bi content for all layers is 2.4%. A higher Bi flux causes earlier Bi incorporation, along with the formation of an additional InGaAs layer above the GaAsBi layer due to In segregation from QD erosion. Additionally, the implementation of GaAsBi SRLs results in smaller dots due to enhanced QD decomposition, which is contrary to the expected function of an SRL. No droplets were detected on the surface of any sample, but we did observe regions of horizontal nanowires within the epilayers for the Bi-rich samples, indicating nanoparticle formation. [ABSTRACT FROM AUTHOR]

For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin III-Sb layers as quantum wells or in superlattices are well known. However, these alloys suffer from severe surface segregation problems, so that the actual profiles are very different from the nominal ones. Here, by inserting AlAs markers within the structure, state-of-the-art transmission electron microscopy techniques were used to precisely monitor the incorporation/segregation of Sb in ultrathin GaAsSb films (from 1 to 20 monolayers (MLs)). Our rigorous analysis allows us to apply the most successful model for describing the segregation of III-Sb alloys (three-layer kinetic model) in an unprecedented way, limiting the number of parameters to be fitted. The simulation results show that the segregation energy is not constant throughout the growth (which is not considered in any segregation model) but has an exponential decay from 0.18 eV to converge asymptotically towards 0.05 eV. This explains why the Sb profiles follow a sigmoidal growth model curve with an initial lag in Sb incorporation of 5 MLs and would be consistent with a progressive change in surface reconstruction as the floating layer is enriched. [ABSTRACT FROM AUTHOR]

The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received considerable attention due to improved photovoltaic performance in QD solar cells. However, there is little data on the structural changes that occur during capping and their relation to different growth conditions. In this work, we studied the effect of AlA capping growth rate (CGR) on the structural features of InAs QDs in terms of shape, size, density, and average content. As will be shown, there are notable differences in the characteristics of the QDs upon changing CGR. The Al distribution analysis in the CL around the QDs was revealed to be the key. On the one hand, for the lowest CGR, Al has a homogeneous distribution over the entire surface, but there is a large thickening of the CL on the sides of the QD. As a result, the QDs are lower, lenticular in shape, but richer in In. On the other hand, for the higher CGRs, Al accumulates preferentially around the QD but with a more uniform thickness, resulting in taller QDs, which progressively adopt a truncated pyramidal shape. Surprisingly, intermediate CGRs do not improve either of these behaviors, resulting in less enriched QDs. [ABSTRACT FROM AUTHOR]

Recently, thin AlAs capping layers (CLs) on InAs quantum dot solar cells (QDSCs) have been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although it has been proposed that this improvement is due to the suppression of the capture of photogenerated carriers through the wetting layer (WL) states by a de-wetting process, the mechanisms that operate during this process are not clear. In this work, a structural analysis of the WL characteristics in the AlAs/InAs QD system with different CL-thickness has been made by scanning transmission electron microscopy techniques. First, an exponential decline of the amount of InAs in the WL with the CL thickness increase has been found, far from a complete elimination of the WL. Instead, this reduction is linked to a higher shield effect against QD decomposition. Second, there is no compositional separation between the WL and CL, but rather single layer with a variable content of InAlGaAs. Both effects, the high intermixing and WL reduction cause a drastic change in electronic levels, with the CL making up of 1–2 monolayers being the most effective configuration to reduce the radiative-recombination and minimize the potential barriers for carrier transport. [ABSTRACT FROM AUTHOR]

The structures of micro and nanotubes obtained by pyrolysis of hydrocarbons, hold onto silicon (Si) substrates, are reported in this work. The tubes fabrication experiments were carried out by Rapid Thermal Chemical Vapor Deposition (RTCVD) using propane (C3H8) as carbon (C) precursor. Selection of parameters such as temperature of deposition, vacuum conditions or surface cleaning leads to the creation of tubular structures. Transmission electron microscopy (TEM), scanning electron microscopy (SEM), selected area electron diffraction (SAED) and energy dispersive X-ray measurements (EDX) are the microbeam techniques that allow to characterize the tubes found in the studied specimens. Different tube configurations such as isolated nanorods, Y-type junctions or fiber-like layers are evidenced. Metallic catalysis seems to be the mechanism involved in the wires formation since Fe particles are present inside the CNT tubes. Other poly-crystalline inclusions are also evidenced by SAED. The composition of the nanotubes changes from tip to tail in an amorphous matrix. The growth mechanisms leading to tube formation are described. [ABSTRACT FROM AUTHOR]

The practical realization of epitaxial quantum dot (QD) nanocrystals led before long to impressive experimental advances in optoelectronic devices, as well as to the emergence of new technological fields. However, the necessary capping process is well-known to hinder a precise control of the QD morphology and therefore of the possible electronic structure required for certain applications. A straightforward approach is shown to tune the structural and optical properties of InAs/GaAs QDs without the need for any capping material different from GaAs or annealing process. The mere adjust of the capping rate allows controlling kinetically the QD dissolution process induced by the surface In-Ga intermixing taking place during overgrowth, determining the final metastable structure. While low capping rates make QDs evolve into more thermodynamically favorable quantum ring structures, increasing capping rates help preserve the QD height and shape, simultaneously improving the luminescence properties. Indeed, a linear relationship between capping rate and QD height is found, resulting in a complete preservation of the original QD geometry for rates above ∼2.0 ML s −1 . In addition, the inhibition of In diffusion from the QDs top to the areas in between them yields thinner WLs, what could improve the performance of several QD-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

Abstract: Strain mapping is defined as a numerical image-processing technique that measures the local shifts of image details around a crystal defect with respect to the ideal, defect-free, positions in the bulk. Algorithms to map elastic strains from high-resolution transmission electron microscopy (HRTEM) images may be classified into two categories: those based on the detection of peaks of intensity in real space and the Geometric Phase approach, calculated in Fourier space. In this paper, we discuss both categories and propose an alternative real space algorithm (Peak Pairs) based on the detection of pairs of intensity maxima in an affine transformed space dependent on the reference area. In spite of the fact that it is a real space approach, the Peak Pairs algorithm exhibits good behaviour at heavily distorted defect cores, e.g. interfaces and dislocations. Quantitative results are reported from experiments to determine local strain in different types of semiconductor heterostructures. [Copyright &y& Elsevier]

We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the lattice-matched 1.0–1.15 eV subcell that would allow the implementation of the optimum monolithic multi-junction solar cell design. The separation of Sb and N atoms during growth leads to an improved composition homogeneity and a lower defect density than in the bulk GaAsSbN counterparts. The type-II band alignment SLs provide long radiative lifetimes that facilitate carrier collection as compared to equivalent type-I SLs. Moreover, the radiative lifetime can be controllably tuned through the period thickness, which is not possible in type-I SLs. A reduced period thickness results in enhanced absorption due to increased wavefunction overlap, as well as in a change in the transport regime from diffusive to quasiballistic, providing improved carrier extraction efficiency. As a result, the short period SL single-junction solar cells show an enhanced power conversion efficiency of 134% over the equivalent bulk devices. Image 1 • GaAsSb/GaAsN superlattices show lower defect density than equivalent bulk alloys. • Type-II band alignment provides long and tunable radiative carrier lifetimes. • Carrier absorption and extraction are enhanced in thin period type-II superlattices. • Thin period superlattice solar cell shows 134% higher efficiency than bulk devices. • GaAsSb/GaAsN superlattices are apt structures for ideal multi-junction solar cells. [ABSTRACT FROM AUTHOR]

In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of solar cells consisting of different GaAsSbN-based structures and correlate the device results with modifications of the optical and structural properties of the alloy. In particular, bulk layers grown at different growth rates and type-II GaAsSb/GaAsN superlattices with different period thickness are analyzed. We find evidences of material quality improvement after the annealing process such as a reduction of N-related radiative defects and Sb clusters. These RTA-induced changes lead to a notable enhancement of the open circuit voltage (V OC), which results in values of the bandgap-voltage offset (W OC = E G /q-V OC) comparable to that of a non-optimized reference GaAs solar cell with the same device structure (W OC ∼0.63 eV). The decrease in W OC after annealing shows a correlation with the reduced radiative recombination at low energy N-related sub-bandgap states. These results suggest that radiative recombination in a broad band of deep defect states is a source of V OC degradation in GaAsSbN solar cells. • Sub-bandgap deep radiative states induced by N are present in GaAs(Sb)N. • Reduction of the N-related radiative defect density after rapid thermal annealing. • Elimination of sub-bandgap optically active states correlates with enhanced V OC. • W OC values of GaAsSbN solar cells comparable to reference GaAs cell (∼0.63 eV). [ABSTRACT FROM AUTHOR]

The size and emission wavelength of self-assembled InAs/InP(001) quantum wires (QWrs) is affected by the P/As exchange process. In this work, we demonstrate by in situ stress measurements that P/As exchange at the InAs/InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P/As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown. [ABSTRACT FROM AUTHOR]

Size and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work, we present in situ and in real time stress measurements and reflection high-energy electron diffraction observations and ex situ transmission electron microscopy (TEM) characterization of stacked layers of InAs quantum wires (QWRs) separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP)<20 nm, the amount of InAs involved in the created QWR from the second stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs three dimensional islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for two- to three-dimensional growth mode transition should be revised in correlated QWR stacks of layers. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a significant external quantum efficiency (EQE), with respect to the GaAsSbN bulk layers. Despite the difficulties in characterizing the distribution of N in dilute III-V nitride alloys, in this work we have obtained N-compositional mappings before and after rapid thermal annealing (RTA) in both types of structures, by using a recent methodology based on the treatment of different scanning transmission electron microscopy (STEM) imaging configurations. Texture analysis by gray level co-occurrence matrixes (GLCM) and the measurement of the degree of clustering are used to compare and evaluate the compositional inhomogeneities of N. Comparison with the Sb maps shows that there is no spatial correlation between the N and Sb distributions. Our results reveal that a better homogeneity of N is obtained in type-I SLs, but at the expense of a higher tendency of Sb agglomeration, and the opposite occurs in type-II SLs. The RTA treatments improve the uniformity of N and Sb in both designs, with the annealed sample of type-II SLs being the most balanced structure for MJSCs. [ABSTRACT FROM AUTHOR]

ZnO microrods were grown by laser assisted flow deposition technique in order to study their luminescence behaviour in the near band edge spectral region. Transmission electron microscopy analysis put in evidence the high crystallinity degree and microrod's compositional homogeneity. Photoluminescence revealed a dominant 3.31 eV emission. The correlation between this emission and the presence of surface states was investigated by performing plasma treatments with hydrogen and nitrogen. The significant modifications in photoluminescence spectra after the plasma treatments suggest a connexion between the 3.31 eV luminescence and the surface related electronic levels. [ABSTRACT FROM AUTHOR]