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We investigate the origin of spin-orbit torques (SOTs) in archetypical Pt/Co/MgO thin films structures by performing harmonic Hall measurements. The behaviour of the damping like (DL) effective field ($h_{DL}$) with varying the Pt layer thickness and the Co layer thickness indicates that bulk spin-Hall effect (SHE) in Pt is mainly responsible for DL-SOT. The insertion of a Pd ultrathin layer at the Pt/Co interface leads to a step decrease in $h_{DL}$, attributed to the modification of interfacial spin transparency. Further increase in Pd thickness led to a reduction of the interfacial spin-orbit coupling (iSOC) quantified by the decrease in the surface magnetic anisotropy. The consistent insensitivity of $h_{DL}$ to variations in iSOC at the bottom Pt/Co interface and oxidation at the top Co/MgO interface provides additional evidence for the bulk SHE origin of DL-SOT. The strong reduction in the field-like (FL) torque effective field ($h_{FL}$) with decreasing iSOC at the Pt/Co interface points to the interfacial nature of FL-SOT, either due to iSOC induced interfacial spin-currents or to the Rashba-Edelstein effect at the Pt/Co interface. Furthermore, we demonstrate that a FL-SOT develops at the top Co/MgO interface opposing the one generated at the bottom Pt/Co interface, whose strength increases with Co/MgO interfacial oxidation, and attributed to the Rashba-Edelstein effect., Comment: 30 pages, 16 figures

In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective damping parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices.

We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions., Comment: 5 pages, 3 figures

We demonstrate room-temperature stabilization of dipolar magnetic skyrmions with diameters in the range of $100$ nm in a single ultrathin layer of the Heusler alloy Co$_2$FeAl (CFA) under moderate magnetic fields. Current-induced skyrmion dynamics in microwires is studied with a scanning Nitrogen-Vacancy magnetometer operating in the photoluminescence quenching mode. We first demonstrate skyrmion nucleation by spin-orbit torque and show that its efficiency can be significantly improved using tilted magnetic fields, an effect which is not specific to Heusler alloys and could be advantageous for future skyrmion-based devices. We then show that current-induced skyrmion motion remains limited by strong pinning effects, even though CFA is a magnetic material with a low magnetic damping parameter., Comment: 5 pages, 4 figures

Interfacial Dzyaloshinskii-Moriya interaction (iDMI) has been investigated in Co2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm

Co2FeAl (CFA) ultrathin films, of various thicknesses (0.9 nm

Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in interlayer exchange coupled (IEC) Pt/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm)/Ru/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm) systems have been studied theoretically and experimentally. Vibrating sample magnetometer has been used to measure their magnetization at saturation and their interlayer exchange coupling constants. These latter are found to be of an antiferromagnetic nature for the investigated Ru range thickness (0.5-1 nm). Their dynamic magnetic properties were studied using Brillouin light scattering (BLS) technique. The BLS measurements reveal pronounced non-reciprocal spin waves propagation. In contrast to the calculations for symmetrical IEC CoFeB layers, this experimental nonreciprocity is Ru thickness and thus coupling strength dependent. Therefore, to explain the experimental behaviour, a theoretical model based on the perpendicular interface anisotropy difference between the bottom and top CoFeB layers has been developed. We show that the Ru thickness dependence of the spin wave non-reciprocity is well reproduced by considering a constant iDMI and different perpendicular interfacial anisotropy fields between the top and bottom CoFeB layers. This anisotropy difference has been confirmed by the investigation of the CoFeB thickness dependence of effective magnetization of Pt/CoFeB/Ru and Ru/CoFeB/MgO individual layers, where a linear behaviour has been observed., Comment: 22 pages, 7 figures

Brillouin light spectroscopy is a powerful and robust technique for measuring the interfacial Dzyaloshinskii-Moriya interaction in thin films with broken inversion symmetry. Here we show that the magnon visibility, i.e. the intensity of the inelastically scattered light, strongly depends on the thickness of the dielectric seed material - SiO$_2$. By using both, analytical thin-film optics and numerical calculations, we reproduce the experimental data. We therefore provide a guideline for the maximization of the signal by adapting the substrate properties to the geometry of the measurement. Such a boost-up of the signal eases the magnon visualization in ultrathin magnetic films, speeds-up the measurement and increases the reliability of the data.

The Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilise Ne\'{e}l domain walls in magnetic thin films, allowing high domain wall velocities driven by spin current effects. DMI occurs at the interface between ferromagnetic and heavy metal layers with strong spin-orbit coupling, but details of the interaction remain to be understood and the role of proximity induced magnetism (PIM) in the heavy metal is unknown. We report interfacial DMI and PIM in Pt determined as a function of Au and Ir spacer layers in Pt/Co/Au,Ir/Pt. The length-scale for both interactions is sensitive to sub-nanometre changes in the spacer thickness, and they correlate over sub mono-layer spacer thicknesses, but not for thicker spacers. The spacer layer thickness dependence of the Pt PIM for both Au and Ir shows a rapid monotonic decay, while the DMI changes rapidly but has a two-step approach to saturation and continues to change, even after the PIM is lost., Comment: 14 pages, including 7 figures

We have characterized the strength of the interfacial Dyzaloshinskii-Moriya interaction (DMI) in ultrathin perpendicularly magnetized CoFeB/MgO films, grown on different underlayers of W, TaN, and Hf, using two experimental methods. First, we determined the effective DMI field from measurements of field-driven domain wall motion in the creep regime, where applied in-plane magnetic fields induce an anisotropy in the wall propagation that is correlated with the DMI strength. Second, Brillouin light spectroscopy was employed to quantify the frequency non-reciprocity of spin waves in the CoFeB layers, which yielded an independent measurement of the DMI. By combining these results, we show that DMI estimates from the different techniques only yield qualitative agreement, which suggests that open questions remain on the underlying models used to interpret these results., Comment: 8 pages

Microstripline ferromagnetic resonance technique has been used to study the indirect magnetoelectric coupling occurring in an artificial magnetoelectric heterostructure consisting of a magnetostrictive thin film cemented onto a piezoelectric actuator. Two different modes (sweep-field and sweep-frequency modes) of this technique have been employed to quantitatively probe the indirect magnetoelectric coupling and to observe a voltage induced magnetization rotation (of 90 degree). This latter has been validated by the experimental frequency variation of the uniform mode and by the amplitude of the sweep-frequency spectra., Comment: 4 pages, 4 figures, submitted to Applied Physics Letters

Results of a comprehensive study by means of Brillouin spectroscopy, complemented by Ferromagnetic Resonance characterization, of spin waves (SW) propagating in Py/Pt bi-layers, characterized by pronounced interface Dzyaloshinskii-Moriya interactions (IDMI) are reported. Non-conventional wave behavior of SW travelling in opposite directions, characterized by non-reciprocity with respect to the inversion of the sign of the SW wave-number, has been revealed. The value of the effective IDMI constant D has been estimated.

Bending effect on the magnetic anisotropy in 20 nm Co$_{2}$FeAl Heusler thin film grown on Kapton\textregistered{} has been studied by ferromagnetic resonance and glued on curved sample carrier with various radii. The results reported in this letter show that the magnetic anisotropy is drastically changed in this system by bending the thin films. This effect is attributed to the interfacial strain transmission from the substrate to the film and to the magnetoelastic behavior of the Co$_{2}$FeAl film. Moreover two approaches to determine the in-plane magnetostriction coefficient of the film, leading to a value that is close to $\lambda^{CFA}=14\times10^{-6}$, have been proposed., Comment: 4 pages, 4 figures

The correlation between magnetic and structural properties of Co_{2} FeAl (CFA) thin films of different thickness (10 nm

10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to the relation CFA(001)[110]//MgO(001)[100] epitaxial relation), respectively for CFA films grown on a Si and on a MgO substrate. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta) while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with $T_{a}$. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.3*10^-3 and 1.1*10^-3 for films of 50 nm thickness annealed at 615 {\deg}C grown on MgO and on Si, respectively)., Comment: 8 pages, 7 figures to appear in J. App. Phys

HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100) and Si(111)). They allow for providing a correlation between these magnetic properties and the fine structure investigated at atomic scale. The Al2O3 tunnel barrier is always amorphous and contains a large concentration of Co atoms, which, however, is significantly reduced when using a sapphire substrate. The Co layer is polycrystalline and shows larger grains for films grown on a sapphire substrate. The VSM investigation reveals in-plane anisotropy only for samples grown on a sapphire substrate. The FMR spectra of the TMJs are compared to the obtained ones with a single Co and Co2MnGe films of identical thickness deposited on a sapphire substrate. As expected, two distinct modes are detected in the TMJs while only one mode is observed in each single film. For the TMJ grown on a sapphire substrate the FMR behavior does not significantly differ from the superposition of the individual spectra of the single films, allowing for concluding that the exchange coupling between the two magnetic layers is too small to give rise to observable shifts. For TMJs grown on a Si or on a MgO substrate the resonance spectra reveal one mode which is nearly identical to the obtained one in the single Co film, while the other observed resonance shows a considerably smaller intensity and cannot be described using the magnetic parameters appropriate to the single Co2MnGe film., Comment: 11 pages, 10 figures, Thin Solid Films

Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the $B2$ phase to the $A2$ phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer measurements show that, depending on the field orientation, one or two-step switchings occur. Moreover, the films present a quadratic MOKE signal increasing with the CFA thickness, due to the increasing chemical order. Ferromagnetic resonance, MOKE transverse bias initial inverse susceptibility and torque (TBIIST) measurements reveal that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term. The fourfold anisotropy is in accord with the crystal structure of the samples and is correlated to the biaxial strain and to the chemical order present in the films. In addition, a large negative perpendicular uniaxial anisotropy is observed. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions, which depend on the CFA thickness. A Gilbert damping coefficient as low as 0.0011 is found., Comment: 11 pages, 11 figures, to appear in Phys. Rev B

We study static and dynamic magnetic properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100), Si(111)). The results are compared to the magnetic properties of Co and of Co$_{2}$MnGe single films lying on sapphire substrates. X-rays diffraction always shows a (110) orientation of the Co$_{2}$MnGe films. Structural observations obtained by high resolution transmission electron microscopy confirmed the high quality of the TMJ grown on sapphire. Our vibrating sample magnetometry measurements reveal in-plane anisotropy only in samples grown on a sapphire substrate. Depending on the substrate, the ferromagnetic resonance spectra of the TMJs, studied by the microstrip technique, show one or two pseudo-uniform modes. In the case of MgO and of Si substrates only one mode is observed: it is described by magnetic parameters (g-factor, effective magnetization, in-plane magnetic anisotropy) derived in the frame of a simple expression of the magnetic energy density; these parameters are practically identical to those obtained for the Co single film. With a sapphire substrate two modes are present: one of them does not appreciably differ from the observed mode in the Co single film while the other one is similar to the mode appearing in the Co$_{2}$MnGe single film: their magnetic parameters can thus be determined independently, using a classical model for the energy density in the absence of interlayer exchange coupling., Comment: 5 pages, 6 figures