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3. Open-air, low-temperature deposition of phase pure Cu2O thin films as efficient hole-transporting layers for silicon heterojunction solar cells

Author

Nguyen, V.S., Sekkat, A., Bellet, D., Chichignoud, G., Kaminski-Cachopo, A., Muñoz-Rojas, D., and Favre, W.

Abstract

Recent research focuses on finding alternative materials and fabrication techniques to replace traditional (p) and (n) doped hydrogenated amorphous silicon (a-Si:H) to reduce cost and boost the efficiency of silicon heterojunction (SHJ) solar cells. In this work, low-cost p-type Cu2O thin films have been investigated and integrated as a hole-transporting layer (HTL) in SHJ solar cells, using atmospheric-pressure spatial atomic layer deposition (AP-SALD), an open-air, scalable ALD approach. Phase pure Cu2O thin films have been deposited at temperatures below the degradation limit of the SHJ, thus maintaining the passivation effect of the a-Si:H layer. The effect of deposition temperatures and HTL thicknesses on the performance of the devices has been evaluated. The fabricated Cu2O HTL-based SHJ cells, having an area of 9 cm2, reach a power conversion efficiency (PCE) of 13.7%, which is the highest reported efficiency for silicon-based solar cells incorporating a Cu2O HTL.

Published
2023
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8. Free hCGβ and Nongonadal Neoplasms

Author

Bellet, D., Rouas, N., Marcillac, I., Housseau, F., Cottu, P., Troalen, F., Bidart, J.-M., Lustbader, Joyce W., editor, Puett, David, editor, and Ruddon, Raymond W., editor

Published
1994
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15. Photonic Reflectors with Point Contact Approach for Cu(In,Ga)(S,Se)2 Solar Cells

Author

Balestrieri, M., Lakhdar Chaouche, S., Jimenez, C., Bellet, D., Foldyna, M., Roca I Cabarrocas, P., and Lincot, D.

Subjects
New Materials and Concepts for Cells and Modules, New Materials and Concepts for Photovoltaic Devices
Abstract

37th European Photovoltaic Solar Energy Conference and Exhibition; 20-24, In this work, we propose an innovative solution to fabricate a photonic back reflector layer prototype for Cu(In,Ga)(S,Se)2 (CIGS) solar cells that is optically rough, physically flat and electrically associated to molybdenum point contacts. This combination should lead to significant improvement in the efficiency of CIGS solar cells and favor the use of thinner CIGS layers. The nanostructured pattern is obtained using polystyrene beads self-assembly, followed by Ag evaporation and polystyrene beads lift-off. Stacks comprising a nanostructured multilayer of silver, molybdenum and an alumina layer deposited conformally by ALCVD, are successfully stacked. The optical characterization of the samples (in air) during the last steps before polishing, including angular resolved measurements, shows that these layers present very large haze factors (around 50%) over a large region of the solar spectrum. Preliminary attempts to planarize the substrate and to reveal the point contacts by chemical etching are reported.

Published
2020
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22. Modeling light scattering form mesoporous silicon

Author

Abouelsaood, Ahmed A., Bellet, D., Dolino, G., Baumbach, T., Toney, M.F., and Rabedeau, T.A.

Subjects
Diffusion -- Research, Light scattering -- Research, Silicon -- Optical properties, Physics
Abstract

Porous silicon (PS) made from doped material is modeled as a uniaxial effective medium consisting of hollow cylindrical silicon shells and free cylindrical pores. Diffuse reflectance of a porous layer at its interface with air agrees with measurements of light scattering from p(super +) porous silicon at a wavelength gamma = 457 nm.

Published
2002

23. X-ray diffuse scattering of p-type porous silicon

Author

Buttard, D., Bellet, D., Baumbach, T., Toney, M.F., and Rabedeau, T.A.

Subjects
Diffusion -- Research, Silicon -- Optical properties, Physics
Abstract

Diffuse x-ray scattering around Bragg peak (004) is investigated for p(super -)- and p(super +)-type silicon samples. The porous silicon (PS) crystallites are stressed along the q(sub z) direction and relaxed along the lateral q(sub x) direction.

Published
2002

28. Soft Dielectric Generators for energy harvesting and sensors

Author

Sylvestre, Alain, Jean-Mistral, Claire, Basrour, Skandar, Bellet, D., Bai, J., Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire des matériaux et du génie physique (LMGP), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire de mécanique des sols, structures et matériaux (MSSMat), Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec, Lmgp, Labo, Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

31. Thin layers and multilayers of porous silicon: X-ray diffraction investigation

Author

Buttard, D., Bellet, D., Dolino, G., and Baumbach, T.

Subjects
Porous materials -- Research, Silicon -- Spectra, X-rays -- Diffraction, Physics
Abstract

Porous silicon (PS) has potential applications in 'all silicon optoelectronics'. A structural investigation of thin PS layers and multilayers has been undertaken, using high resolution x-ray diffraction. Information can be deduced about porous layer parameters including porosity, lattice parameter, interface transition and thickness, in a nondestructive way. Several thickness fringes, and some satellites were observed.

Published
1998

32. Nanoindentation investigation of the Young's modulus of porous silicon

Author

Bellet, D., Lamagnere, P., Vincent, A., and Brechet, Y.

Subjects
Silicon -- Research, Porous materials -- Research, Physics
Abstract

The Young's modulus of porous silicon samples, within the porosity range of 36% to 90%, were determined by the nanoindentation method. The Young's modulus values, Ep, seem to be drastically dependent on the porosity and on the doping level. The relationship of Ep and the relative density was found to be quadratic and in good agreement with the model of Gibson and Ashby which was developed for cellular substances. This also indicated that highly porous silicon layers have very low Young's modulus.

Published
1996

41. Percolation in networks of 1-dimensional objects: comparison between Monte Carlo simulations and experimental observations

Author

Langley, D. P., Lagrange, M., Nguyen, N. D., Bellet, D., Laboratoire des matériaux et du génie physique [?-2019] (LMGP [?-2019]), Institut polytechnique de Grenoble - Grenoble Institute of Technology [2007-2019] (Grenoble INP [2007-2019])-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Département de Physique, and Université de Liège

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry
Published
2018

42. Electron scattering mechanisms in fluorine-doped SnO2 thin films.

Author

Rey, G., Ternon, C., Modreanu, M., Mescot, X., Consonni, V., and Bellet, D.

Subjects
ELECTRON scattering, ELEMENTARY particle scattering, POLYCRYSTALLINE silicon, THIN film research, SOLID state electronics
Abstract

Polycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 · 10-4 Ω cm (square sheet resistance of 8 ࡎ/□) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained. [ABSTRACT FROM AUTHOR]

Published
2013
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43. Transparent and conductive materials for Energy applications

Author

Bellet, D., Sannicolo, T., Aghazadehchors, S., Viet-Nguyen, H., Zhang, S.-T., Muñoz-Rojas, D., Jiménez, C., Consonni, Vincent, Nguyen, N.D., Lmgp, Labo, Laboratoire des matériaux et du génie physique (LMGP ), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

44. Polymorphism of the Blocking TiO2 Layer Deposited on F:SnO2 and Its Influence on the Interfacial Energetic Alignment

Author

Zhang, S. T., Roussel, H., Chaix-Pluchery, O., Langlet, M., Munoz-Rojas, D., Bellet, D., Klein, A., Laboratoire des matériaux et du génie physique [?-2019] (LMGP [?-2019]), and Institut polytechnique de Grenoble - Grenoble Institute of Technology [2007-2019] (Grenoble INP [2007-2019])-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

47. Thickness effects on the texture development of fluorine-doped SnO2 thin films: The role of surface and strain energy.

Author

Consonni, V., Rey, G., Roussel, H., and Bellet, D.

Subjects
POLYCRYSTALS, THIN film research, PYROLYSIS, CRYSTALLOGRAPHY, ELASTICITY
Abstract

Polycrystalline fluorine-doped SnO2 thin films have been grown by ultrasonic spray pyrolysis with a thickness varying in the range of 40 to 600 nm. A texture transition from <110> to <100> and <301> crystallographic orientations has experimentally been shown by x-ray diffraction measurements as film thickness is increased, showing that a process of abnormal grain growth has occurred. The texture effects are considered within a thermodynamic approach, in which the minimization of total free energy constitutes the driving force for grain growth. For very small film thickness, it is found that the <110> preferred orientation is due to surface energy minimization, as the (110) planes have the lowest surface energy in the rutile structure. In contrast, as film thickness is increased, the <100> and <301> crystallographic orientations are progressively predominant, owing to elastic strain energy minimization in which the anisotropic character is considered in the elastic biaxial modulus. A texture map is eventually determined, revealing the expected texture as a function of elastic strain and film thickness. [ABSTRACT FROM AUTHOR]

Published
2012
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50. Study of Fluorine-doped SnO2 thin films with tunable Haze Factor

Author

Zhang, S., Giusti, G., Langley, D., Brochen, S., Jouvet, M., Deschanvres, J.L., Jiménez, C., Pellegrin, Y., Kartopu, G., Muñoz-Rojas, D., Consonni, Vincent, Klein, A., Bellet, D., Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Chimie Et Interdisciplinarité : Synthèse, Analyse, Modélisation (CEISAM), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

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