1. Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy.
- Author
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Bury, P., Bellan, I., Kobayashi, H., Takahashi, M., and Matsumoto, T.
- Subjects
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METAL oxide semiconductors , *CRYSTAL structure , *SEMICONDUCTOR-insulator boundaries , *SOUND waves , *ACOUSTOELECTRIC effects , *ACOUSTIC spectroscopy , *METALLIC oxides - Abstract
New technique of acoustic spectroscopy to study interface states in metal-oxide-semiconductor (MOS) structures with a very thin oxide layer based on the acoustoelectric effect resulting from the interaction between the longitudinal acoustic wave and semiconductor-insulator interface is presented. The essential principles and theoretical background of this acoustic spectroscopy technique that can determine the interface states distribution from the measured acoustoelectric response signal as a function of gate voltage (Uac-Ug characteristics) are described. The results obtained on the representative set of MOS structures prepared on both n- and p-type Si substrates by nitric acid oxidation of Si technology and undergone also some thermal treatment demonstrate that the introduced technique of acoustic spectroscopy can be a very useful tool for the interface states characterization. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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