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We report on the growth and characterization of a new class of photocathode structures for application as electron sources to produce high brightness electron beams for accelerator applications. The sources are realized using III-Nitride materials and are designed to leverage the strong polarization field characteristic of this class material while grown in their wurtzite crystal structure to produce a negative electron affinity condition without the use of Cs, possibly allowing these materials to be operated in RF gun. A Quantum Efficiency (QE) of about 1x10$^{-3}$ and a Mean Transverse Energy (MTE) of electron of about 100 meV are measured at the operating wavelength of 265 nm. In a vacuum level of 3x10$^{-10}$ Torr the QE does not decrease after more than 24 hours of continuous operation. The lowest MTE, about 50 meV, is measured at 300 nm where the measured QE is 1.5x10$^{-5}$. Surface characterizations reveal possible contribution to the MTE due to the surface morphology calling for more detailed studies., Comment: will be submitted to Journal of Applied Physics

Quasiparticle tunneling spectra of the electron-doped (n-type) infinite-layer cuprate Sr_{0.9}La_{0.1}CuO_2 reveal characteristics that counter a number of common phenomena in the hole-doped (p-type) cuprates. The optimally doped Sr_{0.9}La_{0.1}CuO_2 with T_c = 43 K exhibits a momentum-independent superconducting gap \Delta = 13.0 +- 1.0 meV that substantially exceeds the BCS value, and the spectral characteristics indicate insignificant quasiparticle damping by spin fluctuations and the absence of pseudogap. The response to quantum impurities in the Cu-sites also differs fundamentally from that of the p-type cuprates with d_{x^2-y^2}-wave pairing symmetry., Comment: 4 pages, 3 figures. Published in Physical Review Letter. Corresponding author: Nai-Chang Yeh (e-mail: ncyeh@caltech.edu)

Scanning tunneling spectroscopy of superconducting MgB$_2$ ($T_c = 39$ K) were studied on high-density pellets and c-axis oriented films. The sample surfaces were chemically etched to remove surface carbonates and hydroxides, and the data were compared with calculated spectra for all symmetry-allowed pairing channels. The pairing potential ($\Delta_k$) is best described by an anisotropic s-wave pairing model, with $\Delta_k = \Delta_{xy} \sin ^2 \theta_k + \Delta_z \cos ^2 \theta_k$, where $\theta_k$ is the angle relative to the crystalline c-axis, $\Delta_z \sim 8.0$ meV, and $\Delta_{xy} \sim 5.0$ meV., Comment: 4 pages and 3 figures. Submitted to Physical Review Letters. Corresponding author: Nai-Chang Yeh (e-mail: ncyeh@caltech.edu)

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled.

NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.

Ballistic-electron-emission (BEEM) and spectroscopy have been used to characterize the Pd/GaN and Au/GaN interfaces.

BEEM spectroscopy and imaging have been applied to the Au/GaN interface. In contrast to previous BEEM measurements, spectra yield a Schottky barrier height of 1.04eV that agrees well with the highest values measured by conventional methods.

Ballistic-Electron-Emission Microscopy (BEEM) spectroscopy has been performed on Au/Si(111) structures as a function of Au thickness and temperature. At 77 K a direct signature of parallel momentum conservation at the Au/Si interface is observed in the BEEM spectra. The variation in spectral shape with both Au thickness and temperature places restrictions on allowable values of inelastic and elastic mean-free paths in the metal, and also requires the presence of multiple electron passes within the Au layer. An independent indication of multiple reflections is directly observed in the attenuation of BEEM current with Au thickness.

The verification of parallel momentum conservation at a metal/semiconductor interface is a fundamental issue in interface transport. Ballistic-electron-microscopy (BEEM) is a recently developed method for probing interfaces with nanometer resolution. In this talk, BEEM spectroscopy on Au/Si(111) structures as a function of Au thickness and temperature will be described.

An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor. A simple two-parameter current-voltage expression was developed to describe the dependence of the ion current on pressure. The parameters are the saturation-current pressure coefficient and mu/D, the ion mobility/diffusion coefficient. The sensor is useful in the pressure range between 0.1 and 1000 mb using a 1 - mu Ci(241) Am source. Experimental results, taken between 1 and up to 200 mb, show the sensor operates with an anode voltage of 5 V and a sensitivity of 20 fA/mb in nitrogen.

An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor.

BEEM spectroscopy has been performed on Au/Si(111) structures as a function of Au thickness and temperature. At 77K a direct signature of parallel momentum conservation at the Au/Si interface is observed in the BEEM spectra.

BEEM spectroscopy has been performed at room temperature and at 77K on Au/Si(111) structures. Au thickness was varied in the range 75-300U At 77K a direct signature of parallel momentum conservation is observed in the BEEM spectra of samples with thick Au layers.

Described are preliminary results obtained on a novel gas pressure gauge that operates between 0.1 and 1000 mb. This gauge uses a 1- micron Ci alpha particle source to ionize the gas in a small chamber with an electric field imposed between anode and cathode electrodes that drives positive ions to the cathode where they are collected electronically. This gauge could make Martian pressure measurements.

The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

The use of ionization currents for measuring pressure was first demonstrated in the late 1940's. The early gauges operated at high voltages and used rather large ion sources. The ionization gauge is actually a densitometer that is sensitive to the temperature and pressure of the gas in the chamber. This report describes the use of low voltages and small ion sources in the development of a prototype.

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Sil-xGex alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures.

BEEM spectroscopy has been used to characterize hot carrier transport through A1As/GaAsheterostructures. The dependence of electron transmission on A1As thickness has been directlymeasured, and the position of the A1As L_1 minima, which has been subject to some uncertainty inthe past, has been determined. First-principles transmission calculations, based on a tight-bindingformalism, are compared to the results of BEEM spectroscopy.

Ballistic electron emission microscopy and spectroscopy, together with related techniques, have been applied with great success to the study of buried interfaces. These probes, known collectively as BEEM, have yielded important information on interface transport, interface band structure, and carrier scattering, with lateral spatial resolution on the nanometer scale. Recent applications of the technique to polycrystalline metal/semiconductor interfaces have demonstrated an ability to spatially map both conduction band and valence band semiconductor structure. BEEM studies of epitaxial silicide/silicon interfaces have been particularly fruitful, as the rich silicide band structure results in complex and often surprising transport behavior...