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Recently, Sharma et al. [Adv. Sci. 9, 2203473 (2022)] claimed that thin films (around 20 nm) of UO2 deposited on perovskite substrates exhibit strongly enhanced paramagnetism (called induced ferromagnetism by the authors). Moments of up to 3 Bohr magneton/U atom were claimed in magnetic fields of 6 T. We have reproduced such films and, after characterisation, have examined them with X-ray circular magnetic dichroism (XMCD) at the uranium M edges, a technique that is element specific. We do not confirm the published results. We find a small increase, as compared to the bulk, in the magnetic susceptibility of UO2 in such films, but the magnetisation versus field curves, measured by XMCD, are linear with field and there is no indication of any ferromagnetism. The absence of any anomaly around 30 K (the antiferromagnetic ordering temperature of bulk UO2) in the XMCD signal suggests the films do not order magnetically.

A liquid of superconducting vortices generates a transverse thermoelectric response. This Nernst signal has a tail deep in the normal state due to superconducting fluctuations. Here, we present a study of the Nernst effect in two-dimensional hetero-structures of Nb-doped strontium titanate (STO) and in amorphous MoGe. The Nernst signal generated by ephemeral Cooper pairs above the critical temperature has the magnitude expected by theory in STO. On the other hand, the peak amplitude of the vortex Nernst signal below $T_c$ is comparable in both and in numerous other superconductors despite the large distribution of the critical temperature and the critical magnetic fields. In four superconductors belonging to different families, the maximum Nernst signal corresponds to an entropy per vortex per layer of $\approx$ k$_Bln2$., Comment: Accepted for publication in Phys. Rev. Lett

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. Here, by utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO3/SrTiO3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson-Schrodinger subband model. In particular, the large nonlinear dielectric response of SrTiO3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. Our study provides a broad framework for understanding various reported phenomena at the LaAlO3/SrTiO3 interface.

The diamagnetic susceptibility of a superconductor is directly related to its superfluid density. Mutual inductance is a highly sensitive method for characterizing thin films; however, in traditional mutual inductance measurements, the measured response is a non-trivial average over the area of the mutual inductance coils, which are typically of millimeter size. Here we image localized, isolated features in the diamagnetic susceptibility of {\delta}-doped SrTiO3, the 2-DES at the interface between LaAlO3 and SrTiO3, and Nb superconducting thin film systems using scanning superconducting quantum interference device susceptometry, with spatial resolution as fine as 0.7 {\mu}m. We show that these features can be modeled as locally suppressed superfluid density, with a single parameter that characterizes the strength of each feature. This method provides a systematic means of finding and quantifying submicron defects in two-dimensional superconductors., Comment: 11 pages, 10 figures

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.

Strontium titanate is a low-temperature, non-Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We studied the effects of twin structure on superconductivity in a 5.5-nm-thick layer of niobium-doped SrTiO$_{3}$ embedded in undoped SrTiO$_{3}$. We used a scanning superconducting quantum interference device susceptometer to image the local diamagnetic response of the sample as a function of temperature. We observed regions that exhibited a superconducting transition temperature $T_{c}$ $\gtrsim$ 10% higher than the temperature at which the sample was fully superconducting. The pattern of these regions varied spatially in a manner characteristic of structural twin domains. Our results emphasize that the anisotropic dielectric properties of SrTiO$_{3}$ are important for its superconductivity, and need to be considered in any theory of the mechanism of the superconductivity., Comment: 14 pages, 11 figures, Supplemental Information available at http://stanford.edu/group/moler/papers/Noad_STOsuperconductivity_SI.pdf

Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Further, these results point to new research directions, exploiting the STO domains ability to divert or even carry current., Comment: in ACS Appl. Mater. Interfaces, Article ASAP, 2016