99 results on '"Belk J"'
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2. Conjugator length in Thompson's groups
3. Embedding into a finitely presented group
4. Automatic feature recognition and tool path strategies for enhancing accuracy in double sided incremental forming
5. Rational embeddings of hyperbolic groups
6. Umbilical Cord–Derived Stem Cells for the Treatment of Knee Osteoarthritis: A Systematic Review
7. Embedding right-angled Artin groups into Brin-Thompson groups
8. On the asynchronous rational group
9. Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy
10. Röver's simple group is of type f∞
11. Röver's simple group is of type $F_\infty$
12. Automatic feature recognition and tool path strategies for enhancing accuracy in double sided incremental forming
13. Conjugacy and dynamics in Thompson's groups
14. Deciding conjugacy in Thompson's group F in linear time
15. Implementation of a solution to the conjugacy problem in Thompson's group F
16. Photoresponse in arrays of thermoelectric nanowire junctions
17. Impact perforation testing of stab-resistant armour materials
18. Solid Lubricant Nanoparticles as Wear-Reducing Additives in Sheet Metal Forming Fluids
19. Species intermixing and phase transitions on the reconstructed (001) surfaces of GaAs and InAs
20. Dislocation displacement field at the surface of InAs thin films grown on GaAs(110)
21. Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation
22. Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy
23. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes
24. Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
25. Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy
26. Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
27. Different growth modes in GaAs(110) homoepitaxy
28. Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy
29. The Dynamic Compression Test Applied to Tungsten Alloys
30. Deformation Behaviour of Tungsten-Copper Composites
31. Tailoring the electrochromic properties of devices via polymer blends, copolymers, laminates and patterns
32. Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films
33. Precise control of two dimensional growth of InAs on GaAs (111) A surfaces studied by scanning tunneling microscopy
34. Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy
35. Surface morphology during strain relaxation in the growth of InAs on GaAs(110)
36. Deep drawing of superplastic material
37. Use of Multilayer Films for Surface Topography Interferometry
38. Deep drawing of superplastic material
39. Recent developments in the theory, technique and application of electron probe microanalysis: London, February 1967
40. Impact Ductile Molybdenum
41. letters.
42. The nature of island formation in the homoepitaxial growth of GaAs(110)
43. Embedding ℚ into a finitely presented group
44. Conjugator length in Thompson's groups
45. Rational embeddings of hyperbolic groups
46. Embedding right-angled Artin groups into Brin-Thompson groups
47. Effects of explosion-generated shock waves in ducts
48. On the asynchronous rational group
49. Röver's simple group is of type F ∞
50. Implementation of a solution to the conjugacy problem in Thompson's group F
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