16 results on '"Belk, J. G."'
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2. Species intermixing and phase transitions on the reconstructed (001) surfaces of GaAs and InAs
3. Dislocation displacement field at the surface of InAs thin films grown on GaAs(110)
4. Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation
5. Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy
6. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes
7. Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
8. Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy
9. Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
10. Different growth modes in GaAs(110) homoepitaxy
11. Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy
12. Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films
13. Precise control of two dimensional growth of InAs on GaAs (111) A surfaces studied by scanning tunneling microscopy
14. Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy
15. Surface morphology during strain relaxation in the growth of InAs on GaAs(110)
16. The nature of island formation in the homoepitaxial growth of GaAs(110)
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