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Your search keyword '"Beigné, Cyrille"' showing total 11 results
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11 results on '"Beigné, Cyrille"'

1. The valley Nernst effect in WSe$_2$

Author

Dau, Minh-Tuan, Vergnaud, Céline, Marty, Alain, Beigné, Cyrille, Gambarelli, Serge, Maurel, Vincent, Journot, Timothée, Hyot, Bérangère, Guillet, Thomas, Grévin, Benjamin, Okuno, Hanako, and Jamet, Matthieu

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe$_{2}$ mono-multi-layers and the ferromagnetic resonance-spin pumping technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe$_{2}$ that we detect electrically at room temperature. The valley Nernst coefficient is in very good agreement with the predicted value., Comment: 8 pages and 5 figures

Published
2019
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2. Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport

Author

Jamet, Matthieu, Yu, Ing-Song, Devillers, Thibaut, Barski, André, Bayle-Guillemaud, Pascale, Beigne, Cyrille, Rothman, Johan, Baltz, Vincent, and Cibert, Joel

Subjects
Condensed Matter - Materials Science
Abstract

Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall effect, and electrons exhibit a tunneling magnetoresistance, both with a clear dependence on the magnetization of the Mn-rich inclusions; holes exhibit orbital MR, and electrons show only the normal Hall effect, and an additional component of magnetoresistance due to weak localization, all three being independent of the magnetic state of the Mn rich inclusions. Identified mechanisms point to the position of the Fermi level of the Mn-rich material with respect to the valence band of germanium as a crucial parameter in such hybrid layers.

Published
2009

4. The valley Nernst effect in WSe2

Author

Dau, Minh Tuan, primary, Vergnaud, Céline, additional, Marty, Alain, additional, Beigné, Cyrille, additional, Gambarelli, Serge, additional, Maurel, Vincent, additional, Journot, Timotée, additional, Hyot, Bérangère, additional, Guillet, Thomas, additional, Grévin, Benjamin, additional, Okuno, Hanako, additional, and Jamet, Matthieu, additional

Published
2019
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5. Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe 2 few-layers on SiO 2 /Si

Author

Vergnaud, Céline, primary, Gay, Maxime, additional, Alvarez, Carlos, additional, Dau, Minh-Tuan, additional, Pierre, François, additional, Jalabert, Denis, additional, Licitra, Christophe, additional, Marty, Alain, additional, Beigné, Cyrille, additional, Grévin, Benjamin, additional, Renault, Olivier, additional, Okuno, Hanako, additional, and Jamet, Matthieu, additional

Published
2019
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7. Beyond van der Waals Interaction: The Case of MoSe2 Epitaxially Grown on Few-Layer Graphene

Author

Dau, Minh Tuan, primary, Gay, Maxime, additional, Di Felice, Daniela, additional, Vergnaud, Céline, additional, Marty, Alain, additional, Beigné, Cyrille, additional, Renaud, Gilles, additional, Renault, Olivier, additional, Mallet, Pierre, additional, Le Quang, Toai, additional, Veuillen, Jean-Yves, additional, Huder, Loïc, additional, Renard, Vincent T., additional, Chapelier, Claude, additional, Zamborlini, Giovanni, additional, Jugovac, Matteo, additional, Feyer, Vitaliy, additional, Dappe, Yannick J., additional, Pochet, Pascal, additional, and Jamet, Matthieu, additional

Published
2018
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8. Spin–Charge Conversion Phenomena in Germanium

Author

Oyarzún, Simón, primary, Rortais, Fabien, additional, Rojas-Sánchez, Juan-Carlos, additional, Bottegoni, Federico, additional, Laczkowski, Piotr, additional, Vergnaud, Céline, additional, Pouget, Stéphanie, additional, Okuno, Hanako, additional, Vila, Laurent, additional, Attané, Jean-Philippe, additional, Beigné, Cyrille, additional, Marty, Alain, additional, Gambarelli, Serge, additional, Ducruet, Clarisse, additional, Widiez, Julie, additional, George, Jean-Marie, additional, Jaffrès, Henri, additional, and Jamet, Matthieu, additional

Published
2017
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9. Spin pumping and spin-orbit effects in Ge (Conference Presentation)

Author

Oyarzún, Simón, primary, Nandy, Ashis Kumar, additional, Rortais, Fabien, additional, Rojas-Sánchez, Juan-Carlos, additional, Laczkowski, Piotr, additional, Pouget, Stephanie, additional, Okuno, Hanako, additional, Vila, Laurent, additional, Vergnaud, Céline, additional, Beigné, Cyrille, additional, Marty, Alain, additional, Attané, Jean Philippe, additional, Gambarelli, Serge, additional, George, Jean Marie, additional, Jaffres, Henri, additional, Blügel, Stefan, additional, and Jamet, Matthieu, additional

Published
2016
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10. Beyond van der Waals Interaction: The Case of MoSe2Epitaxially Grown on Few-Layer Graphene

Author

Dau, Minh Tuan, Gay, Maxime, Di Felice, Daniela, Vergnaud, Céline, Marty, Alain, Beigné, Cyrille, Renaud, Gilles, Renault, Olivier, Mallet, Pierre, Le Quang, Toai, Veuillen, Jean-Yves, Huder, Loïc, Renard, Vincent T., Chapelier, Claude, Zamborlini, Giovanni, Jugovac, Matteo, Feyer, Vitaliy, Dappe, Yannick J., Pochet, Pascal, and Jamet, Matthieu

Abstract

Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe2/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe2and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe2and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.

Published
2018
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11. Beyond van der Waals Interaction: The Case of MoSe 2 Epitaxially Grown on Few-Layer Graphene.

Author

Dau MT, Gay M, Di Felice D, Vergnaud C, Marty A, Beigné C, Renaud G, Renault O, Mallet P, Le Quang T, Veuillen JY, Huder L, Renard VT, Chapelier C, Zamborlini G, Jugovac M, Feyer V, Dappe YJ, Pochet P, and Jamet M

Abstract

Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe 2 /few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe 2 and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe 2 and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.

Published
2018
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