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Electro-optical control of on-chip photonic devices is an essential tool for efficient integrated photonics. Lithium niobate on insulator (LNOI) is an emerging platform for on-chip photonics due to its large electro-optic coefficient and high nonlinearity [1]. Integrating quantum emitters into LNOI would extend their versatile use in classic photonics to quantum computing and communication [2, 3]. Here, we incorporate single rare-earth ions (REI) quantum emitters in electro-optical tunable lithium niobite (LN) thin films and demonstrate control of LN microcavities coupled to REI over a frequency range of 160 GHz with 5 \mus switching speed. Dynamical control of the cavities enables the modulation of the Purcell enhancement of the REIs with short time constants. Using the Purcell enhancement, we show evidence of detecting single Yb3+ ions in LN cavities. Coupling quantum emitters in fast tunable photonic devices is an efficient method to shape the waveform of the emitter [4]. It also offers a platform to encode quantum information in the integration of a spectral-temporal-spatial domain to achieve high levels of channel multiplexing, as well as an approach to generate deterministic single-photon sources [5, 6].

High quality optical thin film materials form a basis for on-chip photonic micro- and nano-devices, where several photonic elements form an optical circuit. Their realization generally requires the thin film to have a higher refractive index than the substrate material. Here, we demonstrate a method of depositing amorphous 25% Si doped TiO2 films on various substrates, a way of shaping these films into photonic elements, such as optical waveguides and resonators, and finally, the performance of these elements. The quality of the film is estimated by measuring thin film cavity Q-factors in excess of 10^5 at a wavelength of 790 nm, corresponding to low propagation losses of 5.1 db/cm. The fabricated photonic structures were used to optically address chromium ions embedded in the substrate by evanescent coupling, therefore enabling it through film-substrate interaction. Additional functionalization of the films by doping with optically active rare-earth ions such as erbium is also demonstrated. Thus, Si:TiO2 films allow for creation of high quality photonic elements, both passive and active and also provide access to a broad range of substrates and emitters embedded therein.

Rare-earth ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both, implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%.

Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam implanted erbium ensembles in Yttrium Orthosilicate crystals by means of confocal photoluminescence spectroscopy. The sample temperature and the post-implantation annealing step strongly reverberate in the properties of the implanted ions. We find that hot implantation leads to a higher activation rate of the ions. At high enough fluences, the relation between the fluence and final concentration of ions becomes non-linear. Two models are developed explaining the observed behaviour.