1. Nitrogen doping of amorphous carbon thin films
- Author
-
Schwan, J., Batori, V., Ulrich, S., Ehrhardt, H., and Silva, S.R.P.
- Subjects
Amorphous semiconductors -- Research ,Thin films -- Research ,Physics - Abstract
A gas mixture consisting of C2H2, Ar and N2 was utilized to create a plasma beam source powerful enough to deposit nitrogenated and hydrogenated amorphous carbon. The nitrogenated and hydrogenated a-C films showed unique attributes, especially the mobility of the charge carriers, optical gap and electrical conductivity. Defect density fell due to an increase in nitrogen incorporation. Moreover, the films were characterized by infrared and Raman spectroscopy and photo dermal deflection.
- Published
- 1998