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Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect. Herein, we report nanoscale pixelation of green InGaN/GaN LEDs incorporating strain-engineered ultra-dense nanowire (NW) arrays, corresponding to ∼36,000 pixels per inch. The NW pixel arrays exhibit a stable peak wavelength emission at ∼500 nm for over 3 orders of magnitude of injection current densities (from ∼4 A/cm 2 to ∼1 kA/cm 2 ). The observed wavelength stability enhancement (a reduced blue-shift of just ∼4 nm) directly results from the suppressed built-in electric field achieved by strain relaxation of the axial multi quantum wells in the NWs. Finite difference time domain simulations show that emission of the pixel array is significantly increased owing to the enhanced spontaneous emission rate (characterized by a high Purcell factor of ≈2) of the ultra-dense NWs. We have demonstrated top-down NWs, where each NW (diameter ranging down to 200 nm) shows excellent uniformity and light output characteristics in direct contrast to bottom-up grown NW heterostructures. The results of this study establish a viable route for realizing nanoscale pixels with high luminescence stability and wafer-scale uniformity with high (>20%) indium composition InGaN/GaN LED heterostructures, for next-generation near-eye displays.

Spoof-surface-plasmon-polariton (SSPP) interconnects are potential candidates for next-generation interconnects to satisfy the growing demand for high-speed, large-volume data transfer in chip-to-chip and inter-chip communication networks. As in any interconnect, the viability and efficiency of the modulation technique employed will play a crucial role in the effective utilization of SSPP interconnects. In light of the lack of a comprehensive platform for the performance analysis of SSPP signal modulation, this work presents a theoretical framework that contributes to the following: 1) predictions of the maximum attainable modulation speed, limited by geometric dispersion in SSPP waveguide, 2) quantification of the fundamental trade-off relation between modulation speed and energy-efficiency for an arbitrary design of SSPP structure, 3) extension of the analysis over a broad category of SSPP modulation technique. In conjunction, a novel SSPP signal modulation technique is introduced, involving controlled alteration of the resonant condition of the SSPP interconnect using a variable resistor. Analyzing a sample SSPP waveguide with a 7 GHz cut-off frequency, the study identifies a potential ∼28 % change in its transmission-band by varying the implanted resistor from 5kΩ to 5Ω, a range of values practically attainable with gate-controlled, state-of-the-art submicron scale field-effect transistors. The assertions of the theoretical model have been independently validated by finite-element method based numerical simulations, which show that the underlying concept can be utilized to realize the digital modulation scheme of the amplitude shift keying. For a millimeter-scale SSPP channel having 2.75 GHz transmission bandwidth, up to 300 Mbps modulation speed with nominal power loss is achieved in a standard, thermal-noise limited communication system. By scaling the interconnect to micrometer dimensions, the speed can be augmented up to 10 Gbps for data transfer over 100 mm distance with ≥80 % energy efficiency. Essentially, the presented theory is the first of its kind that provides the foundational design guideline for designing and optimizing diverse range of SSPP modulators.

In this work, we predict the most strongly confined resonant mode of light in strongly disordered systems of dielectric scatterers employing the data-driven approach of machine learning. For training, validation, and test purposes of the proposed regression architecture-based deep neural network (DNN), a dataset containing resonant characteristics of light in 8,400 random arrays of dielectric scatterers is generated employing finite difference time domain (FDTD) analysis technique. To enhance the convergence and accuracy of the overall model, an auto-encoder is utilized as the weight initializer of the regression model, which contains three convolutional layers and three fully connected layers. Given the refractive index profile of the disordered system, the trained model can instantaneously predict the Anderson localized resonant wavelength of light with a minimum error of 0.0037%. A correlation coefficient of 0.95 or higher is obtained between the FDTD simulation results and DNN predictions. Such a high level of accuracy is maintained in inhomogeneous disordered media containing Gaussian distribution of diameter of the scattering particles. Moreover, the prediction scheme is found to be robust against any combination of diameters and fill factors of the disordered medium. The proposed model thereby leverages the benefits of machine learning for predicting the complex behavior of light in strongly disordered systems.

In this follow up of our previous work on bio-inspired photonics [Opt. Express28, 25007 (2020)10.1364/OE.399505], we present a detailed comparison between the absorption characteristics of hexagonal and square lattice oriented bi-layered photonic structures designed based on the morphology of Coscinodiscus diatom. It is well established that single layers of square lattice-based systems offer better light absorption characteristics than their hexagonal counterparts. However this study shows that superior performances are obtained with hexagonal lattices when bi-layered photonic structures mimicking Coscinodiscus diatom are designed. The finite difference time domain and effective medium approximation based numerical analysis of this work show that bi-layered structures containing hexagonal lattices exhibit tunable, near-perfect (∼95%) absorptance at around 426 nm wavelength up to about 60° angle of incidence, whereas for square lattice the absorptance goes below 85% (65%) for TM (TE) polarization. Moreover, depending on whether light is being incident onto smaller or larger pores of the bi-layered system, peak absorptance for hexagonal lattices is obtained to be nearly 4 times higher than the results obtained for the equivalent square lattices. Such characteristics make the hexagonal lattice-based structures more suitable for bi-facial light absorption related applications.

An ultra-broadband perfect absorber has a wide range of applications which include solar energy harvesting, imaging, photodetection etc. In this regard, InAs nanowire (NW) based structure is investigated in this work for achieving an ultra broadband perfect absorber. Finite difference time domain (FDTD) based numerical analysis has been performed to optimize the InAs nanowire based structure to obtain an efficient light absorber by varying different dimensional parameters. Mie theory and guided mode resonance based theoretical analysis is developed to validate the results and to get an insight into the tunability of the nanowire based structure. Moreover, the theoretical analysis elucidates the underlying physics of light absorption in nanowires. To achieve ultra broadband absorption, multi radii InAs nanowire based arrays are investigated and it is found that they exhibit superior performance compared to single radius NW based structures. The computed light absorption efficiency (LAE) and short circuit current density values are enhanced to 97% and 40.15 mA cm -2 at 10° angle of incidence for the optimized quad radii NW array within the wavelength range of 300 nm to 1000 nm and 300 nm to 1200 nm, respectively. Moreover, the absorption spectra for these structures are polarization independent and exhibit robust performance for varying angle of incidence. In addition, arrangement of the NW array (hexagonal or square) has negligible effect on the absorption spectra. Such ultra-broadband absorption capability of the proposed structure compared to existing works suggests that the InAs nanowire based structure is very promising as light absorber with prospects in the fields of photo detection, solar power generation, perfect cloaking, photochemistry and other thin film photonic devices., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

In this work we propose and analyze techniques of in-plane directionality control of strongly localized resonant modes of light in random arrays of dielectric scatterers. Based on reported diameters and areal densities of epitaxially grown self-organized nanowires, two-dimensional (2D) arrays of dielectric scatterers have been analyzed where randomness is gradually increased along a preferred direction of directionality enhancement. In view of the multiple-scattering mediated wave dynamics and directionality enhancement of light in such arrays, a more conveniently realizable, practical structure is proposed where a 2D periodic array is juxtaposed with a uniform, random scattering medium. Far- and near-field emission characteristics of such arrays show that in spite of the utter lack of periodicity in the disordered regime of the structure, directionality of the high-Q resonant modes is modified such that on average more than 70% of the output power is emitted along the pre-defined direction of preference. Such directionality enhancement and strong localization are nonexistent when the 2D periodic array is replaced with a one-dimensional Bragg reflector, thereby confirming the governing role of in-plane multiple scattering in the process. The techniques presented herein offer novel means of realizing not only directionality tunable edge-emitting random lasers but also numerous other disordered media based photonic structures and systems with higher degrees of control and tunability.

In spite of tremendous advancements in modern diagnostics, there is a dire need for reliable, label-free detection of highly contagious pathogens like viruses. In view of the limitations of existing diagnostic techniques, the present theoretical study proposes a novel scheme of detecting virus-like particles employing whispering gallery and quasi-whispering gallery resonant modes of a composite optical system. Whereas whispering gallery mode (WGM) resonators are conventionally realized using micro-disk, -ring, -toroid or spherical structures, the present study utilizes a rotationally symmetric array of silicon nanowires which offers higher sensitivity compared to the conventional WGM resonator while detecting virus-like particles. Notwithstanding the relatively low quality factor of the system, the underlying multiple-scattering mediated photon entrapment, coupled with peripheral total-internal reflection, results in high fidelity of the system against low signal-to-noise ratio. Finite difference time domain based numerical analysis has been performed to correlate resonant modes of the array with spatial location of the virus. The correlation has been subsequently utilized for statistical analysis of simulated test cases. Assuming detection to be limited by resolution of the measurement system, results of the analysis suggest that for only about 5% of the simulate test cases the resonant wavelength shift lies within the minimum detection range of 0.001-0.01 nm. For a single virus of 160 nm diameter, more than 8 nm shift of the resonant mode and nearly 100% change of quality factor are attained with the proposed nanowire array based photonic structure.

Inspired by the morphology of Coscinodiscus species diatom, bi-layered photonic structures comprised of dielectric-filled nano-holes of varying diameters have been designed and analyzed to enhance and tune absorption characteristics of GaAs-based thin-film photonic devices. Finite difference time domain-based numerical analysis and effective medium approximation based theoretical calculations show that by adjusting diameter and areal density of the nano-holes of the two layers, the peak absorption wavelength can be tuned over a wide spectral range, while attaining a maximum peak-absorptance value of about 97% and a maximum absorption bandwidth of ∼ 190 nm. The maximum enhancement factor of the bi-layered structure is about 11% higher than the value obtained for its equivalent single-layered counterpart over the near-ultraviolet to visible regime of the spectra. High absorptance over a wide-angle for TM polarization and tunable angle-dependent absorption characteristics for TE polarization are also obtained for the proposed ultra-thin absorbers. It has been shown that instead of having misaligned pore-centers as in Coscinodiscus species diatoms, a bi-layered structure designed with layers of identical lattice constant offers significant flexibility in terms of design and practical realization of thin-film photonic devices.

Effect of disorder on the emission directionality of a whispering gallery mode resonator comprising of circularly symmetric nanowire array is investigated using finite-difference time-domain analysis technique. In spite of rotational symmetry breaking, whispering gallery mode-like isotropic emission characteristics are retained by the nanowire array up to a certain degree of spatial disorder. For higher degrees of randomness, Anderson localized resonant modes are obtained with unidirectional emission characteristics, though the beam direction remains unpredictable because of the underlying random-scattering process. This shortcoming is overcome by designing a system of correlated disorder where nanowire spacing is varied gradually along the preferred axis of unidirectionality. This system, in spite of its high degree of disorder, can effectively support high-Q whispering gallery modes with tunable unidirectional emission characteristics.

A spin-polarized laser offers inherent control of the output circular polarization. We have investigated the output polarization characteristics of a bulk GaN-based microcavity polariton diode laser at room temperature with electrical injection of spin-polarized electrons via a FeCo/MgO spin injector. Polariton laser operation with a spin-polarized current is characterized by a threshold of ∼69  A/cm^{2} in the light-current characteristics, a significant reduction of the electroluminescence linewidth and blueshift of the emission peak. A degree of output circular polarization of ∼25% is recorded under remanent magnetization. A second threshold, due to conventional photon lasing, is observed at an injection of ∼7.2  kA/cm^{2}. The variation of output circular and linear polarization with spin-polarized injection current has been analyzed with the carrier and exciton rate equations and the Gross-Pitaevskii equations for the condensate and there is good agreement between measured and calculated data.

Complex refractive indices of In(x)Ga(1-x)N epitaxial layers have been determined from analysis of data obtained by spectroscopic ellipsometry. The measurements were made in the wavelength range of 400-1687 nm. The samples were grown by plasma-assisted molecular beam epitaxy on (001) silicon substrate and are of the wurtzite crystalline form. A comparison of the fundamental absorption edge derived from analysis of measured data and the measured photoluminescence peak emission energy indicates a Stokes shift present in the alloys.

Use of large bandgap materials together with electrical injection makes the polariton laser an attractive low-power coherent light source for medical and biomedical applications or short distance plastic fiber communication at short wavelengths (violet and ultra-violet), where a conventional laser is difficult to realize. The dynamic properties of a polariton laser have not been investigated experimentally. We have measured, for the first time, the small signal modulation characteristics of a GaN-based electrically pumped polariton laser operating at room temperature. A maximum -3 dB modulation bandwidth of 1.18 GHz is measured. The experimental results have been analyzed with a theoretical model based on the Boltzmann kinetic equations and the agreement is very good. We have also investigated frequency chirping during such modulation. Gain compression phenomenon in a polariton laser is interpreted and a value is obtained for the gain compression factor.

Room temperature electrically pumped inversionless polariton lasing is observed from a bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs at 169 A/cm(2) in the light-current characteristics, accompanied by a collapse of the emission linewidth and small blueshift of the emission peak. Measurement of angle-resolved luminescence, polariton condensation and occupation in momentum space, and output spatial coherence and polarization have also been made. A second threshold, due to conventional photon lasing, is observed at an injection of 44 kA/cm(2).