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Your search keyword '"Basile, A.F."' showing total 11 results
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11 results on '"Basile, A.F."'

1. Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors.

Author

Cavallini, A., Verzellesi, G., Basile, A.F., Canali, C., Castaldini, A., and Zanoni, E.

Subjects
SPECTRUM analysis, FIELD-effect transistors, HETEROSTRUCTURES
Abstract

The features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor bulk, which can only be detected in emission-mode by I-DLTS, deep levels located at the ungated device surface are shown to be revealed both in emission and capture transients by I-DLTS. Experimental and simulation results indicate that this behavior originates from inherent physical properties of surface deep levels interacting with holes attracted at the ungated surface by the negative charge associated with ionized traps. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2003
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2. Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs

Author

Mazzanti, A., Verzellesi, G., Basile, A.F., Canali, C., Sozzi, G., Mazzanti, A., Verzellesi, G., Basile, A.F., Canali, C., and Sozzi, G.

Abstract

Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.

Published
2002

9. The Impact of Light on Current DLTS and Gate-Lag Transients of AlGaAs-GaAs HFETs.

Author

Verzellesi, G., Cavallini, A., Basile, A.F., Castaldini, A., and Canali, C.

Subjects
FIELD-effect transistors, ALUMINUM compounds, GALLIUM arsenide semiconductors, HETEROSTRUCTURES, PHOTONS, BAND gaps
Abstract

Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels. [ABSTRACT FROM AUTHOR]

Published
2004
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