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It is highly probable that perovskite solar cells (PSCs) are mixed electronic-ionic conductors, with ion migration being the driving force for PSC hysteresis. However, there is much that is not understood about the interaction of ion migration with other processes in the cell. The key question is: what factors of a PSC are influenced when ions are free to move? In this contribution, we employ a numerical drift-diffusion model of PSCs to show that the migration of both anions and cations in interaction with trap-mediated recombination in the bulk and/or at the surfaces of the perovskite absorber can manifest both current-voltage hysteresis and unusual nonmonotonic PSC photovoltage transients. We identify that a key mechanism of this interaction is the influence of the net ionic charge throughout the perovskite bulk - which varies as the ions approach new steady-state conditions - on the distribution of electrons and holes and subsequently the spatial distribution of trap-mediated recombination modeled after Shockley Read Hall (SRH) statistics. Relative to intrinsic recombination mechanisms, SRH recombination can be highly sensitive to local asymmetries of the electron-hole population. We show that this sensitivity is key to replicating nonmonotonic transients with multiple time constants, the forms of which may have suggested multiple processes. This work therefore supports the conceptualization of the hysteretic behavior of PSCs as dominated by the interplay between ion migration and trap-mediated recombination throughout the perovskite absorber.

Interfacial carrier recombination is one of the dominant loss mechanisms in high efficiency perovskite solar cells, and has also been linked to hysteresis and slow transient responses in these cells. Here we demonstrate an ultrathin passivation layer consisting of a PMMA:PCBM mixture that can effectively passivate defects at or near to the perovskite/TiO2 interface, significantly suppressing interfacial recombination. The passivation layer increases the open circuit voltage of mixed-cation perovskite cells by as much as 80 mV, with champion cells achieving Voc ∼ 1.18 V. As a result, we obtain efficient and stable perovskite solar cells with a steady-state PCE of 20.4% and negligible hysteresis over a large range of scan rates. In addition, we show that the passivated cells exhibit very fast current and voltage response times of less than 3 s under cyclic illumination. This new passivation approach addresses one of the key limitations of current perovskite cells, and paves the way to further efficiency gains through interface engineering.

With rapid progress in recent years, organohalide perovskite solar cells (PSC) are promising candidates for a new generation of highly efficient thin-film photovoltaic technologies, for which up-scaling is an essential step toward commercialization. In this work, we propose a modified two-step method to deposit the CH3NH3PbI3 (MAPbI3) perovskite film that improves the uniformity, photovoltaic performance, and repeatability of large-area perovskite solar cells. This method is based on the commonly used two-step method, with one additional process involving treating the perovskite film with concentrated methylammonium iodide (MAI) solution. This additional treatment is proved to be helpful for tailoring the residual PbI2 level to an optimal range that is favorable for both optical absorption and inhibition of recombination. Scanning electron microscopy and photoluminescence image analysis further reveal that, compared to the standard two-step and one-step methods, this method is very robust for achieving uniform and pinhole-free large-area films. This is validated by the photovoltaic performance of the prototype devices with an active area of 1 cm(2), where we achieved the champion efficiency of ∼14.5% and an average efficiency of ∼13.5%, with excellent reproducibility.

Pigment based diffuse reflectors (DRs) have several advantages over metal reflectors such as good stability, high reflectivity, and low parasitic absorption. As such, DRs have the potential to be applied on high efficiency silicon solar cells and further increase the power conversion efficiency. In this paper, we perform a thorough review on the notable achievements to date of DRs’ application for photovoltaics. We outline unique attributes of these technologies and discuss the theoretical and laboratory development working towards overcoming the challenges of transferring to high efficiency silicon solar cells. In order to understand the potential of DRs for high efficiency silicon solar cells, we provide a qualitative analysis of the impact of front reflection, rear absorption and the angular distribution on the useful light absorption in silicon wafers. By including this discussion, we provide an outlook for the application of DR in reaching maximum photo-current for high efficiency silicon solar cells.

The issue of hysteresis in perovskite solar cells has now been convincingly linked to the presence of mobile ions within the perovskite layer. Here we test the limits of the ionic theory by attempting to account for a number of exotic characterization results using a detailed numerical device model that incorporates ionic charge accumulation at the perovskite interfaces. Our experimental observations include a temporary enhancement in open-circuit voltage following prolonged periods of negative bias, dramatically S-shaped current–voltage sweeps, decreased current extraction following positive biasing or “inverted hysteresis”, and non-monotonic transient behaviours in the dark and the light. Each one of these phenomena can be reproduced and ultimately explained by our models, providing further evidence for the ionic theory of hysteresis as well as valuable physical insight into the factors that coincide to bring these phenomena about. In particular we find that both interfacial recombination and carrier injection from the selective contacts are heavily affected by ionic accumulation, and are essential to explaining the non-monotonic voltage transients and S-shaped J–V curves. Inverted hysteresis is attributed to the occurrence of “positive” ionic accumulation, which may also be responsible for enhancing the stabilized open-circuit voltage in some perovskite cells.

We report on the prototyping and development of a highly reflective dielectric back reflector for application in thin-film solar cells. The back reflector is fabricated by Snow Globe Coating (SGC), an innovative, simple, and cheap process to deposit a uniform layer of TiO2 particles which shows remarkably high reflectance over a broad spectrum (average reflectance of 99% from 500 nm to 1100 nm). We apply the highly reflective back reflector to tandem thin-film silicon solar cells and compare its performance with conventional ZnO:Al/Ag reflector. By using SGC back reflector, an enhancement of 0.5 mA/cm2 in external quantum efficiency of the bottom solar cell and an absolute value of 0.2% enhancement in overall power conversion efficiency are achieved.We also show that the increase in power conversion efficiency is due to the reduction of parasitic absorption at the back contact; that is, the use of the dielectric reflector avoids plasmonic losses at the reference ZnO:Al/Ag back reflector. The Snow Globe Coating process is compatible with other types of solar cells such as crystalline silicon, III–V, and organic photovoltaics. Due to its cost effectiveness, stability, and excellent reflectivity above a wavelength of 400 nm, it has high potential to be applied in industry.

The band-to-band absorption enhancement due to various types of light trapping structures is studied experimentally with photoluminescence (PL) on monocrystalline silicon wafers. Four basic light trapping structures are examined: reactive ion etched texture (RIE), metal-assisted etched texture (MET), random pyramid texture (RAN) and plasmonic Ag nanoparticles with a diffusive reflector (Ag/DR). We also compare two novel combined structures of front side RIE/rear side RAN and front side RIE/rear side Ag/DR. The use of photoluminescence allows us to measure the absorption due to band-to-band transitions only, and excludes parasitic absorption from free carriers and other sources. The measured absorptance spectra are used to calculate the maximum generation current for each structure, and the light trapping efficiency is compared to a recently-proposed figure of merit. The results show that by combining RIE with RAN and Ag/DR, we can fabricate two structures with excellent light trapping efficiencies of 55% and 52% respectively, which is well above previously reported values for similar wafer thicknesses. A comparison of the measured band-band absorption and the EQE of back-contact silicon solar cells demonstrates that PL extracted absorption provides a very good indication of long wavelength performance for high efficiency silicon solar cells.