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Flexible and stretchable photonics are emerging fields aiming to develop novel applications where the devices need to conform to uneven surfaces or whenever lightness and reduced thickness are major requirements. However, owing to the relatively small refractive index of transparent soft matter, these materials are not well adapted for light management at visible and near-infrared frequencies. Here we demonstrate simple, low cost and efficient protocols for fabricating Si1−xGex-based, sub-micrometric dielectric antennas with ensuing hybrid integration into different plastic supports. The dielectric antennas are realized exploiting the natural instability of thin solid films to form regular patterns of monocrystalline atomically smooth silicon and germanium nanostructures. Efficient protocols for encapsulating them into flexible and transparent, organic supports are investigated and validated. We benchmark the optical quality of the antennas with light scattering measurements, demonstrating the control of the islands structural colour and the onset of sharp Mie modes after encapsulation.

Quantum Key Distribution allows two users to exchange secret keys and it is based on the transmission of single photons or attenuated laser pulses. Recently, sources based on multiple single-photon emitters were demonstrated to be suitable for QKD. Here, we present a CMOS compatible multiple single-photon emitters source realized on a SOI wafer by a standard silicon diode doped with erbium ions. Particular emphasis is placed on the fabrication of such a device enhancing the erbium electroluminescence signal by adopting a proper oxygen co-doping. Finally, electroluminescence characterization at room temperature of the device is presented.

Light‐emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy and has been mostly focused on light extraction and guiding. Here the control of the electronic states of carbon‐related impurities (G‐centers) is addressed via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV, and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized, and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected accounting for the lack of Purcell effect. This technique can be extended to other impurities and Si‐based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits. [ABSTRACT FROM AUTHOR]

We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into the substrate via SOD and then diffused by a rapid thermal annealing process. The dopant concentration and electron mobility were characterized at room and low temperature by four-probe and Hall bar electrical measurements. Time-of-flight-secondary ion mass spectroscopy was performed to estimate the diffusion profile of phosphorus for different annealing treatments. We find that a high phosphorous concentration (greater than 1020 atoms cm−3) with a limited diffusion of other chemical species and allowing to tune the electrical properties via annealing at high temperature for short time. The ease of implementation of the process, the low cost of the technique, the possibility to dope selectively and the uniform doping manufactured with statistical process control show that the methodology applied is very promising as an alternative to the conventional doping methods for the implementation of optoelectronic devices. [ABSTRACT FROM AUTHOR]