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The main differences between the radio-frequency performance of bulk and ultrathin-body single-gate silicon-on-insulator (SOI) MOSFETs that are designed according to the prescription of the 2005 ITRS for analog and mixed-signal application is presented.

The stability of self-consistent Monte Carlo (MC) device simulations is revised developing a model that extends the existing ones by accounting for the effect of a carrier diffusion. The analysis of linear Poisson scheme reveals that, consistently with the available model, the time step between two Poisson solutions must be short compared to a factor proportional to the scattering rate.

An analytical model is described to demonstrate that grid spacing affects the stability of self-consistent Monte Carlo device simulations. Guidelines for the choice of the grid size are proposed, showing that, when the linear Poisson scheme is used, source/drain extensions with doping level as high as [10.sup.20] [cm.sup.-3] require grid spacing lower than 1 nm in order to have stable simulations.

Ultra-thin body Double Gate MOS structures with strained silicon are investigated by solving the 1-D Schrödinger and Poisson equations, with open boundaries conditions on the wave functions in the gate electrodes. The electrostatics of this device architecture and its dependence on the amount of strain and on the thickness of the silicon layer is analyzed in terms of subband structure, subband population, carrier distribution within the strained-silicon layer, charge-voltage characteristics and gate tunneling current. [ABSTRACT FROM AUTHOR]