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Exciton dynamics in a GaAsSb/GaAs quantum well (QW) heterostructure were investigated via both steady state and transient photoluminescence. The measurements at 10 K demonstrated the coexistence of localized excitons (LEs) and free excitons (FEs), while a blue-shift resulting from increased excitation intensity indicated their spatially indirect transition (IT) characteristics due to the type-II band alignment. With increasing temperature from 10 K, the LEs and FEs redistribute, with the LEs becoming less intense at relatively higher temperature. With increasing temperature to above 80 K, electrons in GaAs are able to overcome the small band offset to enter inside GaAsSb and recombine with holes; thus, a spatially direct transition (DT) appeared. Hence, we are able to reveal complex carrier recombination dynamics for the GaAsSb/GaAs QW heterostructure, in which the “S” shape behavior is generated not only by the carrier localization but also by the transformation from IT to DT with elevated temperature.

Bi single atoms supported on CeO2 nanosheets combined with a Ti2O3 based photothermal device showed oxidation resistance and outperforming weak solar driven RWGS with a CO production rate of 31.00 mmol g−1 h−1 under 3 sun units of irradiation.

Ni single atoms doped with CeO2 nanosheets combined with a Ti2O3 based photothermal device showed 3 Suns driven ESR with 462 °C temperature, 519 mmol g−1 h−1 H2 production rate, 16.7% solar-to-fuel efficiency and 60 hours of stable operation.

Monochromaticity for light-emitting diodes (LEDs) is an important parameter. However, carbon dots-based light-emitting diodes (CDs-LEDs) usually suffer from broad emission, which limits the development of this material. In this work, high-quality carbon dots (CDs) with a quantum yield of 16.2% were synthesized. When they were mixed with poly(

Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs0.56 Sb0.44 (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low excess noise avalanche photodiodes (APDs) due to its large disparity between electron and hole ionization coefficients ( $\alpha $ and $\beta $ respectively). The $\alpha /\beta $ ratio also plays a role in Geiger mode operation as it affects the avalanche breakdown probability and hence detection efficiency. In this work, we theoretically investigate the performance of AlAsSb based SPADs. The probability of breakdown for electron-initiated Geiger mode operation increases more sharply with multiplication region width due to progressively more dissimilar ionization coefficients. In comparison with other common avalanche materials, such as InAlAs, InP and Si, our result also suggests that SPADs based on AlAsSb have a sharper breakdown probability than the other three materials under similar low overbias ratio. The calculated breakdown probability of 0.81 in AlAsSb is 0.18 and 0.28 higher than that of InAlAs/Si and InP respectively at 5% overbias ratio and with avalanche region width of 1500 nm.

This Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry–Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm2.

Sunlight driven formic acid decomposition has great potential to supply high-purity H2 without consuming fossil fuel-derived energy. However, a trace amount of CO invariably exists in the obtained H2 and the H2 production rate is always lower than 278 mmol g−1 h−1. Here, we found that high quality MoS2 grown on graphene decorated on Ni foam (Ni/G/MoS2) was active and stable for H2 production from thermocatalytic formic acid decomposition without CO presentation and first principles calculation confirmed that the perfect surface terminating sulfur of MoS2 changed the reaction path of intermediates, thus inhibiting the production of CO. Furthermore, a reaction device constructed with Cu2Se can heat catalysts to 120 and 260 °C under 0.25 kW m−2 and 1 kW m−2 (1 Sun) of irradiation, respectively. By using the system of the Cu2Se based reaction device and Ni/G/MoS2, a CO free H2 production rate of 982 mmol g−1 h−1 was achieved under 0.6 Sun of irradiation, 3.5 times higher than the previous record of photocatalytic formic acid decomposition. Therefore, this work provides a new viewpoint for large scale CO free H2 production in a sustainable and green way.

Binary Sb

The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

Possing excellent catalytic performance about counter electrode (CE) is the prerequisite for obtaining high performance dye sensitized solar cells (DSSCs). Herein, The NiCo2S4/carbon nanofibers (NiCo2S4/CNFs) are successfully synthetised via hydrothermal and electrospinning method, and then directly used in DSSCs. Owing to the synergistic effect between the catalytic of NiCo2S4 materials and the electrical conductivity of CNFs, All chemical measurements reveal that NiCo2S4/CNFs applied in DSSCs exhibit good power conversion efficiency (9.0%) and stability, which surpass that of DSSCs with Pt CE (7.48%), indicating that NiCo2S4/CNFs composite would be helpful for the low-cost and efficient application of DSSCs.

We examine the 1325-nm T-center excitonic transitions in FZ-Si and SOI substrates towards a chip-scale strongly-coupled spin-photon interface. We further observe an unidentified doublet transition around 1312-nm in FZ-Si as a possible single-photon emitter.

The trivalent lanthanides have been broadly utilized as emitting centers in persistent luminescence (PersL) materials due to their wide emitting spectral range, which thus attract considerable attention over decades. However, the origin of the trivalent lanthanides’ PersL is still an open question, hindering the development of excellent PersL phosphors and their broad applications. Here, the PersL of 12 kinds of the trivalent lanthanides with the exception of La3+, Lu3+, and Pm3+ is reported, and a mechanism of the PersL of the trivalent lanthanides in wide bandgap hosts is proposed. According to the mechanism, the excitons in wide bandgap materials transfer their recombination energy to the trivalent lanthanides that bind the excitons, followed by the generation of PersL. During the PersL process, the trivalent lanthanides as isoelectronic traps bind excitons, and the binding ability is not only related to the inherent arrangement of the 4f electrons of the trivalent lanthanides, but also to the extrinsic ligand field including anion coordination and cation substitution. Our work is believed to be a guidance for designing high-performance PersL phosphors.

Two samples with [001] orientated rhenium disulfide (ReS

Fast, sensitive avalanche photodiodes (APDs) are required for applications such as high-speed data communications and light detection and ranging (LIDAR) systems. Unfortunately, the InP and InAlAs used as the gain material in these APDs have similar electron and hole impact ionization coefficients (α and β, respectively) at high electric fields, giving rise to relatively high excess noise and limiting their sensitivity and gain bandwidth product1. Here, we report extremely low excess noise in an AlAs0.56Sb0.44 lattice matched to InP. A deduced β/α ratio as low as 0.005 with an avalanche region of 1,550 nm is close to the theoretical minimum and is significantly smaller than that of silicon, with modelling suggesting that vertically illuminated APDs with a sensitivity of −25.7 dBm at a bit error rate of 1 × 10−12 at 25 Gb s−1 and 1,550 nm can be realized. These findings could yield a new breed of high-performance receivers for applications in networking and sensing.

The two-dimensional transition metal dichalcogenides (TMDCs) have been considered as promising candidates for developing a new generation of optoelectronic devices. Accordingly, investigations of exciton dynamics are of great importance for understanding the physics and the performance of devices based on TMDCs. Herein, after exposure to ambient environment for six months, monolayer tungsten disulfide (WS

We propose and experimentally demonstrate a high-efficiency single-pixel imaging (SPI) scheme by integrating time-correlated single-photon counting (TCSPC) with time-division multiplexing to acquire full-color images at extremely low light level. This SPI scheme uses a digital micromirror device to modulate a sequence of laser pulses with preset delays to achieve three-color structured illumination, then employs a photomultiplier tube into the TCSPC module to achieve photon-counting detection. By exploiting the time-resolved capabilities of TCSPC, we demodulate the spectrum-image-encoded signals, and then reconstruct high-quality full-color images in a single-round of measurement. Based on this scheme, the strategies such as single-step measurement, high-speed projection, and undersampling can further improve the imaging efficiency., Comment: 5 pages, 4 figures

We examine the 1325 nm T center transitions and an unknown color center with 1312 nm transitions in ion-implanted bulk Silicon and Silicon-on-insulator. We aim to use it for strong coupling via photonic crystal cavities.

The In(Ga)As/GaAs surface quantum dots (SQDs) have become appealing recently due to the special surface sensitivity property and consequently the advantage in developing sensors for humidity detection. This research reveals that the InGaAs/GaAs single-layer SQDs exhibit carrier separation due to Fermi level pinning, where electrons are pinned at surface but holes are confined inside the SQDs. Thus, photoluminescence (PL) features corresponding to carrier indirect transition are observed through a prominent blue-shift of ∼ 31 meV for the PL band that obeys a cube root power law over four orders of magnitude change in excitation power. The indirect transition of these SQDs is further characterized through time-resolved PL studies showing a biexponential decay with a relatively elongated carrier lifetime of ∼1.35 ns. This is the first time that a concept of type-II characteristic is proposed for the InGaAs SQDs, which will help to optimize the design and working principles for developing sensors with surface-sensitive InGaAs SQDs.

This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 μm. From these, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric field range of 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. Excess noise characteristics suggest an β/α ratio as low as 0.005 for an avalanche region of 1.5 μm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

AlAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to InP and therefore use InGaAs as the absorption region in a Separate Absorption and Multiplication APD (SAM-APD). The electron and hole ionisation coefficients in this material are very dissimilar and our experiments show that this leads to AlAs0.56Sb0.44 having the lowest excess noise performance of any InP based material system (F = 2.2 at M = 40) reported to date. Simulations suggest that operation at 1550 nm and 25 GB s-1 with a sensitivity of -25.7 dBm is possible in a normal incidence SAM-APD.

Additional file 1: Supplementary Materials

In this research Raman spectroscopy and photoluminescence (PL) spectroscopy measurements reveal different optical characteristics between monolayer (1 L) and bilayer (2 L) WS2 due to the interlayer interaction. First, ultralow frequency (ULF) Raman spectra indicate that 2 L WS2 shows additional shear mode (S) and layer-breathing (LB) mode in comparison with 1 L WS2. The 2 L WS2 has the in-plane vibration mode E 2 g 1 red-shifted while the out-plane vibration mode A 1 g blue-shifted. Then, both direct transition (DT) and indirect transition (IT) emission are observed in the PL spectra for 2 L WS2 while only DT for 1 L WS2. The PL signal corresponding to localized excitons, that is measured as a low energy side tail with the DT emission, is more prominent for 1 L WS2 at low temperature of 7 K. The DT emission and IT emission show opposite variation trend as the temperature increases from 7 K to 300 K, while the average phonon energy in 2 L WS2 is estimated to be almost twice of that for 1 L WS2. These observations illustrate that the interlayer interaction not only change the phonon characteristics for WS2, but also impact the energy band structure and the exciton dynamics, including exciton radiative recombination and exciton-phonon interaction.

Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum dot (QD) – In0.15Ga0.85As quantum well (QW) hybrid nanostructure are investigated using photoluminescence (PL) spectroscopy. This coupled hybrid nanostructure shows a single PL peak from the QD emission at low excitation intensity and a band filling behavior is observed as the excitation intensity increases, suggesting that there exists a channel to capture carriers from the QW to the QDs. Time resolved PL (TRPL) measurements extract a carrier tunneling time of 103.7 ps, which is only one third of the theoretical prediction. A double-channel resonant carrier tunneling mechanism from the QW to the wetting layer and to the fifth excited state of the QDs and then carrier relaxation into lower discrete QD energy states is proposed to explain this fast carrier tunneling. The double-channel resonant carrier tunneling mechanism is qualitatively supported through the analysis of the excitation-dependent PL spectra as well as the PL excitation spectra. These results enrich our understanding of carrier dynamics in coupled QD and QW hybrid structures.