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Hybrid ferromagnet-semiconductor systems possess new outstanding properties, which emerge when bringing magnetic and semiconductor materials into contact. In such structures, the long-range magnetic proximity effect couples the spin systems of the ferromagnet and semiconductor on distances exceeding the carrier wave function overlap. The effect is due to the effective p-d exchange interaction of acceptor-bound holes in the quantum well with d-electrons of the ferromagnet. This indirect interaction is established via the phononic Stark effect mediated by the chiral phonons. Here, we demonstrate that the long-range magnetic proximity effect is universal and observed in hybrid structures with diverse magnetic components and potential barriers of various thicknesses and compositions. We study hybrid structures consisting of a semimetal (magnetite Fe3O4) or dielectric (spinel NiFe2O4) ferromagnet and a CdTe quantum well separated by a nonmagnetic (Cd,Mg)Te barrier. The proximity effect is manifested in the circular polarization of the photoluminescence corresponding to the recombination of photoexcited electrons with holes bound to shallow acceptors in the quantum well induced by magnetite or spinel itself, in contrast to interface ferromagnet in case of metal-based hybrid systems. A nontrivial dynamics of the proximity effect is observed in the studied structures due to recombination-induced dynamic polarization of electrons in the quantum well. It enables the determination of the exchange constant Δexch ≈ 70 μeV in a magnetite-based structure. The universal origin of the long-range exchange interaction along with the possibility of its electrical control offers prospects for the development of low-voltage spintronic devices compatible with existing solid-state electronics., (© 2023 Author(s). Published under an exclusive license by AIP Publishing.)

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF 2 ) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF 2 shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO 2 , TiO 2 , and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF 2 is continuous and free of defects over large regions, which prevents the formation of electrically weak spots., (© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Thin (4-20 nm) yttrium iron garnet (Y 3 Fe 5 O 12 , YIG) layers have been grown on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , GGG) 111-oriented substrates by laser molecular beam epitaxy in 700-1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface. As the growth temperature is increased from 700 to 1000 °C the terraces become wider and the growth gradually changes from layer by layer to step-flow regime. Crystal structure studied by electron and X-ray diffraction showed that YIG lattice is co-oriented and laterally pseudomorphic to GGG with small rhombohedral distortion present perpendicular to the surface. Measurements of magnetic moment, magneto-optical polar and longitudinal Kerr effect (MOKE), and X-ray magnetic circular dichroism (XMCD) were used for study of magnetization reversal for different orientations of magnetic field. These methods and ferromagnetic resonance studies have shown that in zero magnetic field magnetization lies in the film plane due to both shape and induced anisotropies. Vectorial MOKE studies have revealed the presence of an in-plane easy magnetization axis. In-plane magnetization reversal was shown to occur through combination of reversible rotation and abrupt irreversible magnetization jump, the latter caused by domain wall nucleation and propagation. The field at which the flip takes place depends on the angle between the applied magnetic field and the easy magnetization axis and can be described by the modified Stoner-Wohlfarth model taking into account magnetic field dependence of the domain wall energy. Magnetization curves of individual tetrahedral and octahedral magnetic Fe 3+ sublattices were studied by XMCD.

Cobalt nano-structured ultrathin films were grown on orthorhombic MnF(2) by molecular beam epitaxy on CaF(2) epitaxial layers deposited on Si(111) substrates. The Co film was grown at room temperature. It was found to be polycrystalline, forming nano-islands with height≈diameter≤10 nm. X-ray absorption evidences the chemical stability of the Co/MnF(2) interface. Remarkably, x-ray magnetic circular dichroism (XMCD) demonstrates that the Co induces a net magnetization on the Mn ions close to the interface. The magnetic moments of these Mn ions couple antiparallel to the Co and rotate upon field reversal following the magnetization of the Co both below and high above the Néel temperature of MnF(2) (T(N) = 67 K). The density of coupled Mn moments is found to be temperature dependent, with an equivalent thickness of ~1.5 MnF(2) monolayers at 20 K, decreasing to about ~0.5 ML as the temperature is raised to 300 K. Interestingly, the intensity of the Mn XMCD signal appears to be related to the coercivity of the Co layer. This behavior is interpreted in terms of the competition between thermal fluctuations, exchange coupling between Co and Mn at the interface and, at low temperature, the antiferromagnetic order in MnF(2).

Surface X-ray diffraction was applied to study structure of the fluorite-silicon interface forming upon epitaxial growth of CaF2 on Si(001) surface kept at 750 degrees C. Samples with CaF2 coverage of 1.5-4 (110)-monolayers were grown and in-situ characterized using synchrotron radiation. The 3 x 1-like surface reconstruction was observed in agreement with the previous studies by electron diffraction. Interestingly, a well pronounced splitting of the fractional x 1/3 reflections was revealed. This splitting was ascribed to the effect of antiphase domain boundaries in the row-like structure of the interface layer. The in-plane integrated intensities were used to reconstruct two-dimensional atomic structure of the high-temperature CaF2/Si(001) interface.