Search

In a nanomechanical resonator coupled to a quantum point contact, the back action of the electronic state on mechanical motion is studied. The quantum point contact conductance changing with subband index and the eigenfrequency of the resonator are found to correlate. A model is constructed explaining the frequency deviations by the alternating ability of the quantum point contact to screen the piezoelectric charge induced by mechanical oscillations. The observed effects can be used to develop electromechanical methods for studying the density of states in quasi-one-dimensional systems.

Electron transport in suspended and non-suspended GaAs point contacts (PCs) of different widths is experimentally studied. The superballistic contribution to the conductance, that demonstrates a distinctive quadratic dependence on the PC width and temperature growth, is extracted from the experiment. The studied PCs are shown to be described in the framework of hydrodynamic electron flow a in wide temperature range. At low temperatures, $T$, the viscosity is found out to obey the law $1/T^2$ expected for 2D systems, while at higher temperatures it has the dependence $1/T$. Similar measurements performed after the suspension of PCs, i.e. their separation from substrate, show that the electron viscosity reduces in the whole temperature range, that indicates an enhanced electron-electron interaction in suspended structures., Comment: 7 pages, 4 figures

The dynamics of the diffusion flow of holes photoinjected into a mesoscopic GaAs channel of variable width, where they, together with background electrons, form a hydrodynamic electron-hole fluid, is studied using time-resolved microphotoluminescence. It is found that the rate of recombination of photoinjected holes, which is proportional to the rate of their flow, decreases when holes pass through the expanded sections of the channel. In fact, this is the Venturi effect, which consists in a decrease in the velocity of the fluid in the expanded sections of the pipe. Moreover, a non-uniform diffusion velocity profile is observed, similar to the parabolic Hagen-Poiseuille velocity profile, which indicates a viscous hydrodynamic flow. It is shown that in argeement with a theory, the magnetic field strongly suppresses the viscosity of the electron-hole fluid. Additional evidence of the viscous nature of the studied electron-hole fluid is the observed increase in the recombination rate with increasing temperature, which is similar to the decrease in the electrical resistance of viscous electrons with temperature., Comment: 7 pages, 4 figures

We report on the optical realization of the magneto-intersubband oscillations that have been measured in the sub-terahertz transmittance of a GaAs quantum well with two subbands occupied. Following their dc analogue, the oscillations are periodic in the inverse magnetic field with the period governed by the subband gap. Their magnitude and polarization dependence accurately follow the presented simplified version of the dynamic magneto-intersubband oscillations equation that naturally combines dc magneto-intersabband oscillations with microwave-induced resistance oscillations (MIRO). Simultaneously measured photoresistance also reveals its strong sensitivity to the sign of the circular polarization, proving the used theoretical modeling., Comment: 5 pages, 2 figures

In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and periodic width variations. Our primary focus is to explore the impact of these geometries on the electron viscous flow parameters, enabling precise manipulation of hydrodynamic effects under controlled conditions. Through an analysis of the large negative magnetoresistivity and zero field resistivity, we deduce the scattering times for electron-electron and electron-phonon interactions, as well as the effective channel width. Our findings confirm that the system under investigation serves as a tunable experimental platform for investigating hydrodynamic transport regimes at temperatures above 10 K., Comment: 10 pages, 11 figures

The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.

The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a hydrodynamic three-component mixture consisted of electrons and photo-generated heavy and light holes. The obtained results are analyzed within the framework of ambipolar diffusion, which reveals characteristics of a viscous flow. Both hole types exhibit similar hydrodynamic characteristics. In such a way the diffusion lengths, ambipolar diffusion coefficient and the effective viscosity of the electron-hole system are determined., Comment: 6 pages, 4 figures

Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with decrease of Dingle factor due to reduction of quantum electron lifetime at high temperatures. At large tilts new regime of strong MISO suppression with the temperature is observed. Proposed model relates this suppression to magnetic entanglement between subbands, leading to beating in oscillating density of states. The model yields corresponding temperature damping factor: $A_{MISO}(T)=X/\sinh(X)$, where $X=2\pi^2kT\delta f$ and $\delta f$ is difference frequency of oscillations of density of states in two subbands. This factor is in agreement with experiment. Fermi liquid enhancement of MISO amplitude is observed., Comment: 15 pages, 10 figures

We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path., Comment: 8 pages, 8 figures

The dependences of the transport scattering time {\tau}t, quantum lifetime {\tau}q, and their ratio {\tau}t/{\tau}q on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression of scattering by the random potential of remote donors. It is shown that the experimentally observed abrupt increase in {\tau}t and {\tau}q with an increase in ne above a certain critical value nec is related to a decrease in n*R. It is established that the drop in {\tau}t/{\tau}q observed for electron densities ne > nec occurs because scattering by the random potential of background impurities in this two-dimensional system with a decrease in n*R limits an increase in {\tau}t more considerably than an increase in {\tau}q., Comment: 9 pages, 5 figures

The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands (symmetric $S$ and antisymmetric $AS$), separated by the band gap $\Delta_{12}=15.5$ meV. It is shown that, in the linear regime at the applied magnetic field $B >3$ T, the system exhibits oscillations corresponding to the integer quantum Hall effect. A quite complicated pattern of such oscillations is well interpreted in terms of transitions between Landau levels related to different subbands. At $B <1$ T, magneto-intersubband resistance oscillations (MISOs) are observed. An increase in the conductivity with the electric current flowing across the sample or in the intensity of the surface acoustic wave (SAW) in the regime of the integer quantum Hall effect is determined by an increase in the electron gas temperature. In the case of intersubband transitions, it is found that nonlinearity cannot be explained by heating. At the same time, the decrease in the AC conductivity with increasing SAW electric field is independent of frequency, but the corresponding behavior does not coincide with that corresponding to the dependence of the DC conductivity on the Hall voltage $E_y$., Comment: 7 pages, 8 figures

We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements., Comment: Manuscript (7 pages, 1 figure) and Supplemental Material (12 pages, 9 figures)

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time present strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along $\left[110\right]$, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along $\left[1\bar{1}0\right]$, the data shows spin lifetime that was gate-dependent and longer than in the $\left[110\right]$ direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.

We develop a classical kinetic theory of magnetotransport of 2D electrons in narrow channels with partly diffusive boundary scattering and apply it to description of magnetoresistance measured in the temperature interval 4.2-30 K in long mesoscopic bars fabricated from high-purity GaAs quantum well structures. Both experiment and theory demonstrate a number of characteristic features in the longitudinal and Hall resistances caused by the size effect in two dimensions owing to the high ballisticity of the transport. In addition to the features described previously, we also reveal a change in the slope of the first derivative of magnetoresistance when the cyclotron orbit diameter equals to half of the channel width. These features are suppressed with increasing temperature as a result of the electronic viscosity due to electron-electron interaction. By comparing theory and experiment, we determine the characteristic time of relaxation of angular distribution of electrons caused by electron-electron scattering.

Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump-probe configuration. The experimental data exhibited high spin mobility and long spin lifetimes allowing to obtain the spin-orbit fields as a function of the spin velocities. Surprisingly, above moderate electric fields of 0.4V/cm with velocities higher than 2$\mu$m/ns, we observed a dependence of both bulk and structure-related spin-orbit interactions on the velocity magnitude. A remarkable feature is the increase of the cubic Dresselhaus term to approximately half of the linear coupling when the velocity is raised to 10$\mu$m/ns. In contrast, the Rashba coupling for both subbands decreases to about half of its value in the same range. These results yield new information for the application of drift models in spin-orbit fields and about limitations for the operation of spin transistors., Comment: 5 pages, 3 figures

The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensional viscous liquid. The circle obstacle results in an additive contribution to resistivity. If specular boundary conditions apply, it is no longer possible to detect Poiseuille type flow and the Gurzhi effect. However, in flow through a channel with a circular obstacle, the resistivity decreases with temperature. By tuning the temperature, we observed the transport signatures of the ballistic and hydrodynamic regimes on the length scale of disc size. Our experimental results confirm theoretical predictions., Comment: 10 pages, 5 figures

The direct-current (dc) $\sigma_{xx}^{dc}$ and alternating-current (ac) $\sigma_{xx}^{ac}=\sigma_1-i\sigma_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of $\sigma_{xx}$ exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the $\sigma_1 / \sigma_2$ ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism., Comment: 6 pages, 6 figures

Hall viscosity is a nondissipative response function describing momentum transport in two-dimensional (2D) systems with broken time-reversal symmetry. In the classical regime, Hall viscosity contributes to the viscous flow of 2D electrons in the presence of a magnetic field. We observe a pronounced, negative Hall resistivity at low magnetic field in a mesoscopic size, two-dimensional electron system, which is attributed to Hall viscosity in the inhomogeneous charge flow. Experimental results supported by a theoretical analysis confirm that the conditions for observation of Hall viscosity are correlated with predictions., Comment: 8 pages, 7 figures

We report non-local electrical measurements in a mesoscopic size two-dimensional (2D) electron gas in a GaAs quantum well in a hydrodynamic regime. Viscous electric flow is expected to be dominant when electron-electron collisions occur more often than the impurity or phonon scattering events. We observe a negative nonlocal resistance and attribute it to the formation of whirlpools in the electron flow. We use the different nonlocal transport geometries and compare the results with a theory demonstrating the significance of hydrodynamics in mesoscopic samples., Comment: 8 pages, 9 figures

In this contribution, we investigated the spin coherence of high-mobility dense two-dimensional electron gases confined in multilayer systems. The dynamics of optically-induced spin polarization was experimentally studied employing the time-resolved Kerr rotation and resonant spin amplification techniques. For both the double and triple quantum wells doped beyond the metal-insulator transition, where the spin coherence is greatly suppressed, we found remarkably long spin lifetimes limited by the Dyakonov-Perel mechanism and spin hopping process between the donor sites as well as the spread of ensemble g-factor. The double quantum well structure yields a spin lifetime of 6.25 ns at T = 5 K while the triple quantum well shows a spin lifetime exceeding 25 ns at T = 8 K., Comment: 8 pages, 6 figures, conference proceedings

We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of local resistance. We attribute all transport properties to the presence of hydrodynamic effects. Experimental results confirm the theoretically predicted significance of viscous flow in mesoscopic devices., Comment: 4 pages, 4 figures

The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2x5) -> (1x3) is a complex of two transitions - order -> disorder and disorder -> order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2x5) -> DO was studied. The activation energies of structural transitions ex(2x5) -> (2x5), (2x5) -> DO and DO -> (1x3) on singular and vicinal faces GaSb(001) were determined., Comment: 2 pages, 2 figures

The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with a remarkably long dephasing time T2* > 13 ns for the structure doped beyond metal-insulator transition. Dyakonov-Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factors for the spin coherence time. In the metallic regime, we found that the electron-electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov-Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, Dyakonov-Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T2*. Our findings, namely, long-lived spin coherence persisting up to about room temperature, spin polarization decay time with and without a magnetic field, the spin-orbit field, single electron relaxation time, transport scattering time, and the electron-electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices., Comment: 8 pages, 4 figures

We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane magnetic field the TRKR measurements show the robustness of carrier's spin polarization against temperature which can be easily traced in an extended range up to 250 K. By tuning the pump-probe wavelength to the exciton bound to a neutral donor transition, we observed a remarkably long-lasting spin coherence (with dephasing time T2* > 14 ns) limited by the spin hopping process and exchange interaction between the donor sites as well as the ensemble spread of g-factor. The temperature dependent spin dephasing time revealed a double linear dependence due to the different relaxation mechanisms active at respective temperature ranges. We observed that the increase of sample temperature from 5 K to 250 K, leads to a strong T2* reduction by almost 98%/97% for the excitation wavelengths of 823/821 nm. Furthermore, we noticed that the temperature increase not only causes the reduction of spin lifetime but can also lead to the variation of electron g-factor. Additionally, the spin dynamics was studied through the dependencies on the applied magnetic field and optical pump power., Comment: 6 pages, 4 figures

In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons in subbands. We observe microwave photoresistance at high numbers of magneto-intersubband oscillations (MISO). The system under study demonstrates microwave-induced resistance oscillations (MIRO) and MISO interference. MIRO in the studied two-subband system appear in lower magnetic fields comparing to MISO. This is an indication of some unknown mechanism that exists in the two-subband system and is responsible for MISO amplitude damping in low magnetic fields, while it does not affect the MIRO amplitude. Zero resistance states (ZRS) appear in the system under study under microwave irradiation in the narrow range of magnetic fields near the MISO maximum., Comment: 6 pages, 4 figures

Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data shows large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields., Comment: 6 pages, 4 figures

We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power., Comment: 6 pages, 5 figures

By measuring the thermoelectric effect in high-mobility quantum wells with two occupied subbands in perpendicular magnetic field, we detect magnetophonon oscillations due to interaction of electrons with acoustic phonons. These oscillations contain specific features identified as combined resonances caused by intersubband phonon-assisted transitions of electrons in the presence of Landau quantization. The quantum theory of phonon-drag magnetothermoelectric effect, generalized to the case of multi-subband occupation, describes our experimental findings., Comment: 7 pages, 6 figures

Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the spin polarization about a current-controlled spin-orbit magnetic field. Spatially-resolved imaging showed a large variation of the electron g-factor and the drift transport of coherent electron spins over distances exceeding half-millimetre in a direction transverse to the electric field., Comment: Proceedings of the 33rd International Conference on the Physics of Semiconductors (ICPS) 2016

To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance oscillations at high magnetic fields, caused by the oscillations of thermodynamic density of states, are not essentially modified by microwaves. However, in the region of fields below 1 Tesla, we observe another set of oscillation, with the period and the phase identical to those of microwave induced resistance oscillations. The phenomenon of microwave induced capacitance oscillations is explained in terms of violation of the Einstein relation between conductivity and the diffusion coefficient in the presence of microwaves, which leads to a dependence of the capacitor charging on the anomalous conductivity. We also observe microwave-induced oscillations in the capacitive response to periodic variations of external heating. These oscillations appear due to the thermoelectric effect and are in antiphase with microwave induced resistance oscillations because of the Corbino-like geometry of our experimental setup., Comment: 10 pages, 6 figures

We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hall bar device. We observed coherence times in the nanoseconds range transported beyond half-millimeter distances in a direction transverse to the applied electric field. The measured long spin transport length can be explained by two material properties: large mean free path for charge diffusion in clean systems and enhanced spin-orbit coefficients in the triple well., Comment: 12 pages, 13 figures

The electrical response of two-dimensional electron gas to vibrations of a nanomechanical cantilever containing it is studied. Vibrations of perpendicularly oriented cantilevers are experimentally shown to change oppositely the conductivity near their bases. This indicates the piezoelectric nature of electromechanical coupling. A physical model is developed, which quantitatively explains the experiment. It shows that the main origin of the conductivity change is a rapid change in the mechanical stress on the boundary between suspended and non-suspended areas, rather than the stress itself.

Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter coupling of single near-surface ($<10\,nm$) InAs quantum dots monolithically integrated into electromagnetic hot-spots of sub-wavelength sized metal nanoantennas. The antenna strongly enhances the emission intensity of single quantum dots by up to $\sim16\times$, an effect accompanied by an up to $3.4\times$ Purcell-enhanced spontaneous emission rate. Moreover, the emission is strongly polarised along the antenna axis with degrees of linear polarisation up to $\sim85\,\%$. The results unambiguously demonstrate the efficient coupling of individual quantum dots to state-of-the-art nanoantennas. Our work provides new perspectives for the realisation of quantum plasmonic sensors, step-changing photovoltaic devices, bright and ultrafast quantum light sources and efficent nano-lasers.

The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<

We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width and electron density (Dresselhaus linear and cubic constants) which allows us to attain long dephasing times in the nanoseconds range. The determination of the scales: transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices., Comment: 5 pages, 5 figures

We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving., Comment: 5 pages, 4 figures

We observe microwave induced nonlocal resistance in magnetotransport in single and bilayer electronic systems. The obtained results provide evidence for an edge state current stabilized by microwave irradiation due to nonlinear resonances. Our observation are closely related to microwave induced oscillations and zero resistance states in a two-dimensional (2D) electron system., Comment: 5 pages, 4 figures