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The formation of nanowires by chemical bath deposition is of great interest for a wide variety of optoelectronic, piezoelectric, and sensing devices, from which the theoretical description of their elongation process has emerged as a critical issue. Despite its strong influence on the nanowire growth kinetics, reactor size has typically not been taken into account in the theoretical modeling developed so far. We report a new theoretical description of the axial growth rate of nanowires in dynamic conditions based on the solution of Fick's diffusion equations, implementing a sealed reactor of finite height as a varying parameter. The theoretical model is applied in various chemical bath deposition conditions in the case of the growth of ZnO nanowires, from which the influence of the reactor height is investigated and compared to experimental data. In particular, it is found that the use of reactor heights smaller than 2 cm significantly decreases the ZnO nanowires' axial growth rate in typical experimental conditions due to the faster depletion of reactants. The present approach is further used predictively, showing its high potential for the design of batch reactors for a wide variety of chemical precursors and semiconductor materials in applied research and industrial production.

The controlled incorporation of dopants like copper into ZnO nanowires (NWs) grown by chemical bath deposition (CBD) is still challenging despite its critical importance for the development of piezoelectric devices. In this context, the effects of the addition of copper nitrate during the CBD of ZnO NWs grown on Au seed layers are investigated in detail, where zinc nitrate and hexamethylenetetramine are used as standard chemical precursors and ammonia as an additive to tune the pH. By combining thermodynamic simulations with chemical and structural analyses, we show that copper oxide nanocrystals simultaneously form with ZnO NWs during the CBD process in the low-pH region associated with large supersaturation of Cu species. The Cu(II) and Zn(II) speciation diagrams reveal that both species show very similar behaviors, as they predominantly form either X 2+ ions (with X = Cu or Zn) or X(NH 3 ) 4 2+ ion complexes, depending on the pH value. Owing to their similar ionic structures, Cu 2+ and Cu(NH 3 ) 4 2+ ions preferentially formed in the low- and high-pH regions, respectively, are able to compete with the corresponding Zn 2+ and Zn(NH 3 ) 4 2+ ions to adsorb on the c- plane top facets of ZnO NWs despite repulsive electrostatic interactions, yielding the significant incorporation of Cu. At the highest pH value, additional attractive electrostatic interactions between the Cu(NH 3 ) 4 2+ ion complexes and negatively charged c- plane top facets further enhance the incorporation of Cu into ZnO NWs. The present findings provide a deep insight into the physicochemical processes at work during the CBD of ZnO NWs following the addition of copper nitrate, as well as a detailed analysis of the incorporation mechanisms of Cu into ZnO NWs, which are considered beyond the only electrostatic forces usually driving the incorporation of dopants such as Al and Ga.

Desoxyribonucleic acid (DNA) origami architectures are a promising tool for ultimate lithography because of their ability to generate nanostructures with a minimum feature size down to 2 nm. In this paper, we developed a method for silicon (Si) nanopatterning to face up current limitations for high-resolution patterning with standard microelectronic processes. For the first time, a 2 nm-thick 2D DNA origami mask, with specific design composed of three different square holes (with a size of 10 and 20 nm), is used for positive pattern transfer into a Si substrate using a 15 nm-thick silicon dioxide (SiO 2 ) layer as an intermediate hard mask. First, the origami mask is transferred onto the SiO 2 underlayer, by an HF vapor-etching process. Then, the Si underlayer is etched using an HBr/O 2 plasma. Each hole is transferred in the SiO 2 layer and the 20 nm-sized holes are transferred into the final stack (Si). The resulting patterns exhibited a lateral resolution in the range of 20 nm and a depth of 40 nm. Patterns are fully characterized by atomic force microscopy, scanning electron microscopy, focused ion beam-transmission electron microscopy, and ellipsometry measurements.

ZnO nanowires are considered as attractive building blocks for piezoelectric devices, including nano-generators and stress/strain sensors. However, their integration requires the use of metallic seed layers, on top of which the formation mechanisms of ZnO nanowires by chemical bath deposition are still largely open. In order to tackle that issue, the nucleation and growth mechanisms of ZnO nanowires on top of Au seed layers with a thickness in the range of 5-100 nm are thoroughly investigated. We show that the ZnO nanowires present two different populations of nano-objects with a given morphology. The majority primary population is made of vertically aligned ZnO nanowires, which are heteroepitaxially formed on top of the Au (111) grains. The resulting epitaxial strain is found to be completely relieved at the Au/ZnO interface. In contrast, the minority secondary population is composed of ZnO nanowires with a significant mean tilt angle around 20° with respect to the normal to the substrate surface, which are presumably formed on the (211) facets of the Au (111) grains. The elongation of ZnO nanowires is further found to be limited by the surface reaction at the c-plane top facet in the investigated conditions. By implementing the selective area growth using electron beam lithography, the position of ZnO nanowires is controlled, but the two populations still co-exist in the ensemble. These findings provide an in-depth understanding of the formation mechanisms of ZnO nanowires on metallic seed layers, which should be taken into account for their more efficient integration into piezoelectric devices.

Metallic conductive nanowires (NWs) with DNA bundle core are achieved, thanks to an original process relying on double-stranded DNA alignment and physical vapor deposition (PVD) metallization steps involving a silicon substrate. First, bundles of DNA are suspended with a repeatable process between 2 µm high parallel electrodes with separating gaps ranging from 800 nm to 2 µm. The process consists in the drop deposition of a DNA lambda-phage solution on the electrodes followed by a naturally evaporation step. The deposition process is controlled by the DNA concentration within the buffer solution, the drop volume, and the electrode hydrophobicity. The suspended bundles are finally metallized with various thicknesses of titanium and gold by a PVD e-beam evaporation process. The achieved NWs have a width ranging from a few nanometers up to 100 nm. The electrical behavior of the achieved 60 and 80 nm width metallic NWs is shown to be Ohmic and their intrinsic resistance is estimated according to different geometrical models of the NW section area. For the 80 nm width NWs, a resistance of about few ohms is established, opening exploration fields for applications in microelectronics., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

DNA nanotechnology is currently widely explored and especially shows promises for advanced lithography due to its ability to define nanometer scale features. We demonstrate a 9 × 14 nm(2) hole pattern transfer from DNA origami into an SiO2 layer with a sub-10-nm resolution using anhydrous HF vapor in a semiconductor etching machine. We show that the resulting SiO2 pattern inherits its shape from the DNA structure within a process time ranging from 30 to 60 s at an etching rate of 0.2 nm/s. At 600 s of etching, the SiO2 pattern meets corrosion and the overall etching reaction is blocked. These results, in addition to the entire surface coverage by magnesium occurring on the substrate at a density of 1.1 × 10(15) atom/cm(2), define a process window, fabrication rules, and limits for DNA-based lithography.