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244 results on '"Bai, Shulin"'

18. A triple-mode mid-infrared modulator for all-surface radiative thermal management

Author

Fang, Haoming, Xie, Wanrong, Li, Xiuqiang, Fan, Kebin, Lai, Yi-Ting, Sun, Bowen, Bai, Shulin, Padilla, Willie J., and Hsu, Po-Chun

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science, Condensed Matter - Soft Condensed Matter, Physics - Optics
Abstract

Thermal management is ubiquitous in the modern world and indispensable for a sustainable future. Radiative heat management provides unique advantages because the heat transfer can be controlled by the surface. However, different surface emissivities require different tuning strategies. Here, we demonstrate a triple-mode mid-infrared modulator that can switch between passive heating and cooling suitable for all types of object surface emissivities. The device is composed of a surface-textured infrared-semi-transparent elastomer coated with a metallic back reflector, which is biaxially strained to sequentially achieve three fundamental modes: emission, reflection, and transmission. By analyzing and optimizing the coupling between optical and mechanical properties, we achieve a performance of emittance contrast = 0.58, transmittance contrast = 0.49, and reflectance contrast = 0.39. The device can provide a new design paradigm of radiation heat regulation to develop the next generation wearable devices, robotics, and camouflage technology.

Published
2021

41. Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe.

Author

Jin, Yang, Qiu, Yuting, Bai, Shulin, Xie, Hongyao, Liu, Shibo, Hong, Tao, Gao, Xiang, Wen, Yi, and Zhao, Li‐Dong

Subjects
THERMOELECTRIC conversion, CARRIER density, MULTIPLE scattering (Physics), ENERGY conversion, COPPER, THERMAL conductivity, THERMOELECTRIC materials
Abstract

Thermoelectric materials are widely researched for their energy conversion capabilities in the fields of power generation and refrigeration. And a superior thermoelectric conversion efficiency requires an excellent power factor and low thermal conductivity. Herein, a remarkable thermoelectric figure of merit（ZT） ∼ 2.6 at 673 K is realized in GeTe with 20% addition of CuSbSe2. Multiple synergistic effects of CuSbSe2 alloying collectively contribute to the excellent thermoelectric performance in GeTe. CuSbSe2 alloying effectively tunes ultrahigh carrier density of GeTe to the optimum. The introduction of Cu, Sb, and Se atoms create numerous point defects that scatter high‐frequency phonons. Additionally, surplus CuSbSe2 facilitates the formation of copper‐selenium phases, which embed at grain boundaries and generate interfaces after sintering. Combining the planar defects evolved from Ge vacancies, multi‐dimension defects effectively scatter multiple frequency phonons. An extraordinarily low lattice thermal conductivity of 0.3 Wm−1 K−1 at 673 K is obtained, approaching the theoretical estimation predicted by Cahill model. Eventually, the peak conversion efficiency of 7.4% is obtained in segmented device with ΔT of 419 K. The commingled effects of CuSbSe2 in GeTe further open up an elitist route to designing high‐performance materials. [ABSTRACT FROM AUTHOR]

Published
2024
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42. High Carrier Mobility Promotes In‐Plane Thermoelectric Performance of n‐Type PbSnS2 Crystals.

Author

Zhan, Shaoping, Bai, Shulin, Qin, Bingchao, Zhu, Yingcai, Wang, Siqi, Liu, Dongrui, Hong, Tao, Gao, Xiang, Zheng, Lei, Wen, Yi, and Zhao, Li‐Dong

Subjects
*CHARGE carrier mobility, *THERMOELECTRIC cooling, *THERMOELECTRIC apparatus & appliances, *THERMOELECTRIC materials, *THERMOELECTRIC power
Abstract

PbSnS2 crystals have the advantage of high performance and low cost as emerging thermoelectric materials. Herein, thermoelectric properties of PbSnS2 crystals are substantially boosted through the strategy of lattice plainification to manipulate micro‐defect. By introducing Ni elements into n‐type PbSnS2, the intrinsic Pb/Sn cation vacancies are compensated by Ni, achieving a plainer lattice and higher carrier mobility. Meanwhile, the charge density is enhanced due to the orbital hybridization between the 3d orbital of Ni and the 3p orbital of the neighboring S, further facilitating the carrier transport. Consequently, an ultrahigh carrier mobility of ≈312 cm2 V−1 s−1 in n‐type PbSnS2+0.0010Ni crystal is obtained with a largely enhanced ZT of ≈0.6 at 300 K along the in‐plane direction, and a maximum ZT of ≈1.2 can be obtained at 473 K. Moreover, a 7‐pair thermoelectric device composed of n‐type PbSnS2+0.0010Ni crystal and p‐type commercial Bi0.4Sb1.6Te3 is fabricated, which can produce a cooling temperature difference of ≈19.4 K. And a single‐leg device composed of the PbSnS2+0.0010Ni crystal realizes a maximum power generation efficiency of ≈2.7%. The work further optimizes the low‐cost and earth‐abundant PbSnS2 crystals as potential application candidates in thermoelectric cooling and power generation. [ABSTRACT FROM AUTHOR]

Published
2024
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