Search

The ‘Korean Wave’ has significantly impacted the global economy, especially in Indonesia. However, there is a gap in understanding how Korean celebrities, as brand ambassadors, influence local consumer behavior and purchase intentions. This study aims to clarify this impact using the theory of planned behavior (TPB) framework. The roles of brand attachment, brand love, and brand loyalty, moderated by product type, were examined with 194 survey respondents, and data was analyzed using SmartPLS software. Key findings indicate that brand personality significantly influences brand attachment. Customer brand engagement positively affects brand love. Brand attachment impacts both brand loyalty and brand love, while brand love strongly influences brand loyalty. Brand loyalty significantly affects purchase intentions, confirming that loyal customers are more likely to make repeat purchases. Product type only moderates the influence of brand attachment on brand loyalty, not the influence of brand love on brand loyalty. The implications for marketers are significant. Businesses should leverage Korean celebrities as brand ambassadors to enhance brand visibility and loyalty. Aligning brand personality with ambassadors can deepen consumer attachment. Creating engaging content and focusing on emotional branding can foster stronger connections. Tailoring marketing strategies to different product types and monitoring brand loyalty feedback can enhance market performance. Despite its contributions, the study acknowledges limitations, including potential demographic biases and the need for broader cultural and product category exploration in future research.

This study aimed to explore the potential association between Endothelin type A receptor (EDNRA) genetic polymorphisms and susceptibility to large artery atherosclerotic stroke (LAA), as well as the involvement of inflammation mechanisms. We recruited Han Chinese patients with LAA and age- and sex-matched controls. The distribution of alleles and genotypes for 16 single nucleotide polymorphisms (SNPs) in EDNRA was analyzed using dominant, recessive, and co-dominant genetic models between cases and controls. We quantified the mRNA and protein levels of EDNRA and NLRP3 genes, and concentrations of inflammatory factors (TNFα, IL-1β, IL-6, IL-8, IL-10, IL-18, and CCL18) in peripheral blood samples randomly selected from cases and controls. We also investigated the relationship between these SNPs, gene expression patterns and inflammatory factor levels. A total of 428 LAA cases and 434 controls were enrolled in this study. The results showed that rs5343 TT genotype of EDNRA was significantly associated with an increased risk of LAA (OR = 3.243, 95%CI = 1.608–6.542, P = 0.001). It also demonstrated a significant upregulation level of NLRP3 as well as higher concentrations of IL-10, IL-18, and CCL-18 in cases compared to controls. Besides, we discovered that the EDNRA polymorphisms were linked to NLRP3, IL-6, IL-10, and IL-18 levels in cases. There existed a positive correlation between EDNRA transcription levels and both NLRP3 transcript levels (r = 0.437, p < 0.001) and IL-18 concentrations (r = 0.212, p < 0.001). EDNRA is linked to susceptibility of LAA. This association may be attributed to the NLRP3-mediated inflammatory pathway. [ABSTRACT FROM AUTHOR]

Summary: Static Random Access Memory (SRAM) is vital in aerospace applications, but it may experience soft errors in strong radiation environments. This paper proposes a reconfigurable radiation SRAM with two operating modes catering to different environmental requirements: (1) traditional triple modular redundancy mode used when the radiation environment is strong and (2) SRAM cell expansion mode used when the radiation is not very strong. For example, when the memory capacity of a single module is 8 k, the memory capacity is 8 k in traditional triple modular redundancy mode, but it can be tripled to 24 K in extended mode. As can be obviously seen, this design can adjust the size according to the needs. In SRAM cell expansion mode, the proposed 14T SRAM cell enables the memory to maintain radiation resistance. Compared with DICE, RHBD‐12T, and WHIT, the read speed is improved by 3.8%, 5.7%, and 11.5% respectively, but compared with WE‐QUATRO, the read speed is reduced by 1.9%. The hold static noise margin is 1.378 times than DICE, 1.201 times than WE‐QUATRO, 1.045 times than RHBD‐12T, and 1.14 times than WHIT, respectively. The proposed 14T cell in this paper exhibits the highest critical charge value compared with the other cells. Combined with the expansion mode of the reconfiguration design, it shows great stability. [ABSTRACT FROM AUTHOR]

With the development of semiconductor technology, the size of transistors continues to shrink. In complex radiation environments in aerospace and other fields, small-sized circuits are more prone to soft error (SE). Currently, single-node upset (SNU), double-node upset (DNU) and triple-node upset (TNU) caused by SE are relatively common. TNU’s solution is not yet fully mature. A novel and low-cost TNU self-recoverable latch (named NLCTNURL) was designed which is resistant to harsh radiation effects. When analyzing circuit resiliency, a double-exponential current source is used to simulate the flipping behavior of a node’s stored value when an error occurs. Simulation results show that the latch has full TNU self-recovery. A comparative analysis was conducted on seven latches related to TNU. Besides, a comprehensive index combining delay, power, area and self-recovery—DPAN index was proposed, and all eight types of latches from the perspectives of delay, power, area, and DPAN index were analyzed and compared. The simulation results show that compared with the latches LCTNURL and TNURL which can also achieve TNU self-recoverable, NLCTNURL is reduced by 68.23% and 57.46% respectively from the perspective of delay. From the perspective of power, NLCTNURL is reduced by 72.84% and 74.19%, respectively. From the area perspective, NLCTNURL is reduced by about 28.57% and 53.13%, respectively. From the DPAN index perspective, NLCTNURL is reduced by about 93.12% and 97.31%. The simulation results show that the delay and power stability of the circuit are very high no matter in different temperatures or operating voltages. [ABSTRACT FROM AUTHOR]