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Recent advancements in computing technologies coupled with the need to make sense of large amounts of raw data have renewed much interest in data-driven materials design and discovery. Traditional materials science research relies heavily on experimental data to gauge the properties of materials. However, this paradigm is purely based on trial and error and ongoing research can take decades to discover new materials. Data-driven modeling tools such as machine learning and its proven libraries can help speed up the materials' discovery process through the implementation of powerful algorithms on readily available material datasets mined from the ever-increasing private- and government-funded material databases. In this Perspective, we applied various machine learning models on tens of hundreds of thermoelectric compounds obtained from density functional theory calculation results. In our preliminary analysis, we made use of pymatgen and the powerful materials science library matminer to add and explore key material features that have the propensity to accurately predict our achievable target output. We evaluated the accuracy and performance of our models with the coefficient of determination (R2), the root mean square error, and K-fold cross-validation metrics and identified the most important descriptors for our materials. Finally, we reviewed the current state-of-the-art in data-driven thermoelectric materials' design and discovery, its current challenges, and prospects. [ABSTRACT FROM AUTHOR]

Thin-film transparent heaters (TFTHs) are gaining popularity in optoelectronics and a variety of domestic applications, including smart windows, car defrosters, and other devices. The deposition and characterization of TFTHs made of gallium-doped zinc oxide (GZO) are presented in this work. GZO thin films were deposited via pulsed laser deposition on glass substrates with varying oxygen partial pressures from 0 to 10 mTorr during deposition. The samples demonstrated very low sheet resistance values between 5 and 17 Ω/sq from 0 to 10 mTorr, respectively. UV/vis transmission spectra revealed that TFTHs have a high optical transparency above 80%. GZO-based TFTHs demonstrated a consistent and repeatable joule heating effect, with temperatures reaching 76 °C with a low input voltage of 10 V. This research could guide the future use of GZO as a transparent conducting oxide material for many potential cost-effective applications from low-powered electronics to lightweight and wearable devices. [ABSTRACT FROM AUTHOR]

Layered structure bismuth telluride and molybdenum disulfide thin films were successfully deposited on different substrates using radio-frequency magnetron sputtering technique. The structural, morphological, and thermoelectric transport properties of bismuth telluride and molybdenum disulfide thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting thermoelectric device. The magnitude of the Seebeck coefficient of bismuth telluride thin films decreases with increase in film thickness. Bismuth telluride grown at 350 °C for 10 min, which is approximately 120 nm, displays a maximum Seebeck coefficient of −126 μV K−1 at 435 K. The performance shows strong temperature dependence when the films were deposited at 300 °C, 350 °C, and 400 °C. The power factor increases from 0.91 × 10−3 W/mK2 at 300 K to about 1.4 × 10−3 W/mK2 at 350 K. Molybdenum disulfide films show the positive Seebeck coefficient values and their Seebeck coefficient increases with film thickness. The AFM images of bismuth telluride thin films display a root-mean-square (rms) roughness of 32.3 nm and molybdenum disulfide thin films show an rms roughness of 6.99 nm when both films were deposited at 350 °C. The open-circuit voltage of the pn-junction thermoelectric generator (TEG) device increases with increase in ΔT to about 130 mV at ΔT = 120 °C. We have demonstrated a highly efficient pn-junction TEG device for waste heat recovery applications. [ABSTRACT FROM AUTHOR]

The dependence of the threshold energy density E(sub th)/S in Nd(sub 0.5)La(sub 0.5)Al3(BO3)4 random laser on the diameter of the pumped spot d is experimentally studied. Findings reveal that at d greater than or equal to 130 mum, E(sub th)/S is proportional to 1/d+const.

Comparing the absorption spectrum of a single-crystalline material and the reflection spectrum of its powder, we have derived a simple empirical formula for the reflection coefficient of absorbing powder. The proposed equation, which slightly resembles the Lambert-Beer law for transmission, does not correspond to the equation derived in the approximation of a simple one-dimensional diffusion model.

An analysis of a semiconductor laser frequency stabilization to a Fabry-Perot(FP) cavity fringe, using a modulation-demodulation frequency stabilization technique is discussed. It is shown that in typical stabilization conditions, the ultimate semiconductor laser linewidth reduction can be severely limited by the intermodulation excess noise.

The drawbacks of common anodes in lithium-ion batteries (LIBs) and hybrid supercapacitors (HSCs), such as the high voltage plateau of Li4Ti5O12 (1.55 V vs. Li/Li+) and the moderate capacity of graphite (372 mAh-g-1), have established a need for better materials. Conversion materials, and in particular iron oxide and CaFe2O4 (CFO), have amassed recent attention as potential anode replacements. In this study, we evaluate the material and electrochemical effects of the solution combustion synthesis (SCS) of porous CFO across novel fuel-to-oxidizer ratios and calcination temperatures. We demonstrate that nearly doubling the amount of fuel used during synthesis increases capacities between 120 and 150% at high current densities (~ 1000 mA-g-1) and across 500 additional charging-discharging cycles, an effect brought on in part by enhanced compositional purity in these samples. However, in order to ensure long-term cyclic stability, it is necessary to also calcine porous CFO to 900 °C to enhance crystallite size, particle size and spacing, and compositional purity. [ABSTRACT FROM AUTHOR]

A dual doped regio-regular poly(3-hexylthiophene-2,5-diyl) (P3HT) was investigated to develop a multi-functional organic field effect transistor (OFET). OFETs based on a pristine P3HT and a dual doped P3HT (P3HT:PCBM:I2 blend) were fabricated to study the impact of doping on the electrical properties of the samples, and to examine the mechanism through which it amplified the output performance of the doped OFETs. A series of experimental techniques such as device electrical characterization, active layer surface analysis, and photon absorptivity measurements were conducted to quantitatively characterize the principal parameters that are susceptible to change as a result of doping. Topographic mapping revealed the expected doping-induced improvements in surface morphology, which could be associated with the ability of iodine to improve interdigitation between adjacent P3HT chains. Similarly, absorption spectra showed a 3 nm red-shift of the light absorbance spectrum of the doped samples compared to the undoped samples. The electrical conductivity of the samples was also examined at various conditions of temperature and light intensity, and the values obtained from the doped sample were approximately one order of magnitude higher compared to those of the undoped sample at room temperature, which explains the reason behind the higher output current drawn from the doped device compared to that of the undoped OFET. The explanation for this is two-fold, both PCBM and iodine promote the generation of free charge carriers, which increases the electrical conductivity of the active layer; and in addition to that, the improved P3HT main-chain interdigitation brought about by the introduction of iodine results in an increase in charge-carrier mobility, which also results in higher electrical conductivity. The findings of this study offers valuable information that could be instrumental in further advancing the future organic semiconductors based studies. [ABSTRACT FROM AUTHOR]

We report on the study of epitaxial MgO thin films on (0001) Al-doped ZnO (Al: ZnO) underlayers, grown by oxygen plasma assisted pulsed laser deposition technique. A systematic investigation of the MgO thin films was performed by X-ray diffraction and atomic force microscopy, along with the current-voltage characteristics. A distinguished behavior was observed that the preferred MgO orientation changes from (111) to (001) in the films as the growth temperature increases. Two completely different in-plane epitaxial relationships were also determined from X-ray diffraction as: [110]MgO//[[formula]]Al: ZnO and [110]MgO//[[formula]]Al: ZnO for (001) MgO with 60° rotated triplet domains, and [110]MgO//[[formula]]Al: ZnO for (111) MgO with 180° rotated twin. The pronounced temperature dependence indicates a reconciliation of the nucleation driving forces among surface, interfacial, and strain energy for heteroepitaxy of cubic MgO on hexagonal Al: ZnO. The related interfacial atomic registry is considered to be important to the formation of unusual (001) MgO on hexagonal crystals. In addition, the electrical characterization revealed a dramatic reduction of the leakage current in (001) MgO thin films, whereas the small grain size of (111) MgO is identified by atomic force microscopy as a main cause of large leakage current. [ABSTRACT FROM AUTHOR]