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To get enhanced long-wavelength absorption, an impurity photovoltaic (IPV) mechanism was implemented within a transparent conducting oxide (TCO) at the rear of a solar cell. The numerical simulation of the N+/P (silicon)/IPV-TCO device was carried out by using SCAPS-1D program which allows the inclusion of optically active defects. In the proposed heterostructure configuration, ZnTe is a suitable material as back surface reflector. In analyzing the Si/ZnTe interface, lattice mismatch, energy band alignment and defects density were considered with appropriate treatment. In particular, to cure the detrimental 12% lattice mismatch at the interface, a thin silicon amorphous layer was inserted in-between, allowing 22.98% conversion efficiency. With adapted ZnTe Lucovsky's model for the optical capture cross sections and introduction of an oxygen radiative IPV defect (O2 level at 0.4 eV below the conduction band), a conversion efficiency of 27.15% was ultimately achieved. The experimental feasibility of the high-efficiency heterostructure device is evaluated.

Silicon solar cells play a dominant role in the photovoltaic market. However, their manufacturing process is quite expensive and involves complex processes. Therefore, new materials are intensively explored for the aim of potentially higher efficiency and lower cost solar cells. ZnMgO alloy is a very promising transparent conductive oxide layer and which acts as front layer as well as an anti-reflective coating in silicon solar cells reducing costs and complexity of process. Numerical simulation using the SCAPS-1D software enables to find the optimized parameters of p-Si/ZnMgO hetero-junction in comparison with the structure comprising ZnO front layer. Even with the effect of stress caused by the high lattice mismatch at the ZnMgO/Si interface, our calculations show a conversion efficiency of 16.57%.The introduction of a thin layer of hydrogenated amorphous silicon improves the cell output performance to 17.14%., Nanomaterials Science & Engineering, Vol 2 No 4 (2020): Nanomaterials Science & Engineering

31st European Photovoltaic Solar Energy Conference and Exhibition; 131-135, Pyrite FeS2 is an earth-abundant, non-toxic semiconductor that can produce large photocurrents in solar cells, owing especially to its high absorption coefficient (~≥ 5 *105 cm-1 in visible range). However and to get better performance, FeS2 energy band gap (~ 0.95 eV) should be barely enlarged to values over 1.15 eV by Ni Alloyed FeS2. In a first step and within the framework of Perdew-Burke-Ernzerhof-GGA/LDA approximations, the modified Becke- Johnson potential was used to calculate the band gap of n-type pyrite thin film and gives a value of 0.96 eV, close to 0.95eV experimental value. For electron affinity calculation, B3LYP method was implemented in addition to mBJ approach to run concomitantly the double auto coherent calculation. In order to determine band gap and electron affinity of the Ni alloyed FeS2, super-cells of Fe1-xNixS2 with different contents in Ni were used. We observe a reduction of the band gap for x ≥ 0.03, but its increase in the case x < 0.03. As for optical properties, we discuss details about absorption coefficient spectra and refraction index variations; calculations were performed from momentum matrix elements and interpreted via the projected density of states.

This report processes as the importance that in today the implementation of new equipments so assuringa competitiveness of the Territory and the professional clubs By comparison with our European neighbours, we realize that France is late in terms of new infrastructures, it handicaping sportily and economically fonos clubs.; Ce mémoire traite de l'importance qu'a aujourd'hui la mise en place de nouveaux équipements assurant ainsi une compétitivité du Territoire et des clubs professionnels. En comparaison de nos voisins européens, on se rend compte que la France est en retard en termes de nouvelles infrastructures, cela handicapant sportivement et économiquement nos clubs.