Search

In this study, a Y2O3 insulator was fabricated via the sol–gel process and the effect of precursors and annealing processes on its electrical performance was studied. Yttrium(III) acetate hydrate, yttrium(III) nitrate tetrahydrate, yttrium isopropoxide oxide, and yttrium(III) tris (isopropoxide) were used as precursors, and UV/ozone treatment and high-temperature annealing were performed to obtain Y2O3 films from the precursors. The structure and surface morphologies of the films were characterized via grazing-incidence X-ray diffraction and scanning probe microscopy. Chemical component analysis was performed via X-ray spectroscopy. Electrical insulator characteristics were analyzed based on current density versus electrical field data and frequency-dependent dielectric constants. The Y2O3 films fabricated using the acetate precursor and subjected to the UV/ozone treatment showed a uniform and flat surface morphology with the lowest number of oxygen vacancy defects and unwanted byproducts. The corresponding fabricated capacitors showed the lowest current density (Jg) value of 10−8 A/cm2 at 1 MV/cm and a stable dielectric constant in a frequency range of 20 Hz–100 KHz. At 20 Hz, the dielectric constant was 12.28, which decreased to 10.5 at 105 Hz. The results indicate that high-quality, high-k insulators can be fabricated for flexible electronics using suitable precursors and the suggested low-temperature fabrication methods. [ABSTRACT FROM AUTHOR]

Herein, sol–gel-processed Y2O3 resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the Y2O3 RRAM devices. The oxidation process, mobile ion migration speed, and reduction process all impact the conductive filament formation of the indium–tin–oxide (ITO)/Y2O3/Ag and ITO/Y2O3/Cu RRAM devices. Between Ag and Cu, Cu can easily be oxidized due to its standard redox potential values. However, the conductive filament is easily formed using Ag TEs. After triggering the oxidation process, the formed Ag mobile metal ions can migrate faster inside Y2O3 active channel materials when compared to the formed Cu mobile metal ions. The fast migration inside the Y2O3 active channel materials successfully reduces the SET voltage and improves the number of programming–erasing cycles, i.e., endurance, which is one of the nonvolatile memory parameters. These results elucidate the importance of the electrochemical properties of TEs, providing a deeper understanding of how these factors influence the resistive switching characteristics of metal oxide-based atomic switches and conductive-metal-bridge-filament-based cells. [ABSTRACT FROM AUTHOR]

With increasing demand for wearable electronics capable of computing huge data, flexible neuromorphic systems mimicking brain functions have been receiving much attention. Despite considerable efforts in developing practical neural networks utilizing several types of flexible artificial synapses, it is still challenging to develop wearable systems for complex computations due to the difficulties in emulating continuous memory states in a synaptic component. In this study, polymer conductivity is analyzed as a crucial factor in determining the growth dynamics of metallic filaments in organic memristors. Moreover, flexible memristors with bio‐mimetic synaptic functions such as linearly tunable weights are demonstrated by engineering the polymer conductivity. In the organic memristor, the cluster‐structured filaments are grown within the polymer medium in response to electric stimuli, resulting in gradual resistive switching and stable synaptic plasticity. Additionally, the device exhibits the continuous and numerous non‐volatile memory states due to its low leakage current. Furthermore, complex hardware neural networks including ternary logic operators and a noisy image recognitions system are successfully implemented utilizing the developed memristor arrays. This promising concept of creating flexible neural networks with bio‐mimetic weight distributions will contribute to the development of a new computing architecture for energy‐efficient wearable smart electronics. [ABSTRACT FROM AUTHOR]

Herein, the Fabry-Perot (F-P) interference of cesium silver bismuth bromide (Cs2AgBiBr6) double perovskite solar cells has been analyzed by modulating the optical path length of each layer step by step using the finite-difference time-domain (FDTD) method. The study was performed pass through three main steps. In step 1, for the fluorine-doped tin oxide (FTO)/Cs2AgBiBr6 double perovskite/gold (Au) architecture, we increased the absorption layer thickness from 150 to 600 nm at intervals of 150 nm and then predicted the optical performance including the absorption and reflection. In step 2, titanium dioxide (TiO2) layer was added between FTO electrode and Cs2AgBiBr6 double perovskite and then scaled from 20 to 200 nm at intervals of 20 nm. In the analysis process, short-circuit current density ( J sc ) repeatedly fell and rose as the TiO2 layer thickness increased, and when TiO2 layer thickness is 100 nm, J sc showed the highest value of 13.91 mA/cm2. In step 3, by applying a spiro-OMeTAD layer between the Cs2AgBiBr6 double perovskite absorption layer and Au electrode, the J sc showed a continuous increase with slight decrease as the spiro-OMeTAD layer thickness increased from 110 to 200 nm, and when the spiro-OMeTAD layer thickness was 200 nm, J sc was calculated as 14.57 mA/cm2, which is the highest value in the range. In the case of the optimal condition of full structure device, the Fabry-Perot resonance peaks were discovered at 477, 520, 572, 659, and 778 nm five wavelength regions, and the influence of the Fabry-Perot resonance on the generation rate inside the absorption layer on the 520, 572, and 659 nm monochromatic wavelength light was analyzed according to the position in the device. Our study approaches the Cs2AgBiBr6 double perovskite solar cell from an F-P cavity perspective and shows the light trapping phenomenon of the device according to the optical path length modulation. [ABSTRACT FROM AUTHOR]