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Thomson scattering spectra measure the response of plasma particles to incident radiation. In warm dense matter, which is opaque to visible light, x-ray Thomson scattering (XRTS) enables a detailed probe of the electron distribution and has been used as a diagnostic for electron temperature, density, and plasma ionization. In this work, we examine the sensitivities of inelastic XRTS signatures to modeling details including the dynamic collision frequency and the electronic density of states. Applying verified Monte Carlo inversion methods to dynamic structure factors obtained from time-dependent density functional theory, we assess the utility of XRTS signals as a way to inform the dynamic collision frequency, especially its direct-current (DC) limit, which is directly related to the electrical conductivity.

The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions have a strong influence on calculations of the effective $g$ factor of a lithographic quantum dot in a Ge/SiGe heterostructure. Comparing predictions from a model including these effects to raw magnetospectroscopy data, we apply maximum-likelihood estimation to infer the shape of a quantum dot with up to four holes. We expect that methods like this will be useful in assessing qubit-to-qubit variability critical to further scaling quantum computing technologies based on spins in semiconductors., Comment: 9 pages, 6 figures

The rapid pace of development in quantum computing technology has sparked a proliferation of benchmarks for assessing the performance of quantum computing hardware and software. Good benchmarks empower scientists, engineers, programmers, and users to understand a computing system's power, but bad benchmarks can misdirect research and inhibit progress. In this Perspective, we survey the science of quantum computer benchmarking. We discuss the role of benchmarks and benchmarking, and how good benchmarks can drive and measure progress towards the long-term goal of useful quantum computations, i.e., "quantum utility". We explain how different kinds of benchmark quantify the performance of different parts of a quantum computer, we survey existing benchmarks, critically discuss recent trends in benchmarking, and highlight important open research questions in this field.

Density matrix downfolding (DMD) is a technique for regressing low-energy effective Hamiltonians from quantum many-body Hamiltonians. One limiting factor in the accuracy of classical implementations of DMD is the presence of difficult-to-quantify systematic errors attendant to sampling the observables of quantum many-body systems on an approximate low-energy subspace. We propose a hybrid quantum-classical protocol for circumventing this limitation, relying on the prospective ability of quantum computers to efficiently prepare and sample from states in well-defined low-energy subspaces with systematically improvable accuracy. We introduce three requirements for when this is possible, including a notion of compressibility that quantifies features of Hamiltonians and low-energy subspaces thereof for which quantum DMD might be efficient. Assuming that these requirements are met, we analyze design choices for our protocol and provide resource estimates for implementing quantum-enhanced DMD on both the doped 2-D Fermi-Hubbard model and an ab initio model of a cuprate superconductor.

We compare several quantum phase estimation (QPE) protocols intended for early fault-tolerant quantum computers (EFTQCs) in the context of models of their implementations on a surface code architecture. We estimate the logical and physical resources required to use these protocols to calculate the ground state energy of molecular hydrogen in a minimal basis with error below $10^{-3}$ atomic units in the presence of depolarizing logical errors. Accounting for the overhead of rotation synthesis and magic state distillation, we find that the total $T$-gate counts do not vary significantly among the EFT QPE protocols at fixed state overlap. In addition to reducing the number of ancilla qubits and circuit depth, the noise robustness of the EFT protocols can be leveraged to reduce resource requirements below those of textbook QPE, realizing approximately a 300-fold reduction in computational volume in some cases. Even so, our estimates are well beyond the scale of existing early fault-tolerance demonstrations., Comment: 14 pages, 15 figures

Stopping power is the rate at which a material absorbs the kinetic energy of a charged particle passing through it -- one of many properties needed over a wide range of thermodynamic conditions in modeling inertial fusion implosions. First-principles stopping calculations are classically challenging because they involve the dynamics of large electronic systems far from equilibrium, with accuracies that are particularly difficult to constrain and assess in the warm-dense conditions preceding ignition. Here, we describe a protocol for using a fault-tolerant quantum computer to calculate stopping power from a first-quantized representation of the electrons and projectile. Our approach builds upon the electronic structure block encodings of Su et al. [PRX Quantum 2, 040332 2021], adapting and optimizing those algorithms to estimate observables of interest from the non-Born-Oppenheimer dynamics of multiple particle species at finite temperature. Ultimately, we report logical qubit requirements and leading-order Toffoli costs for computing the stopping power of various projectile/target combinations relevant to interpreting and designing inertial fusion experiments. We estimate that scientifically interesting and classically intractable stopping power calculations can be quantum simulated with roughly the same number of logical qubits and about one hundred times more Toffoli gates than is required for state-of-the-art quantum simulations of industrially relevant molecules such as FeMoCo or P450.

Real-time time-dependent density functional theory (TDDFT) is presently the most accurate available method for computing electronic stopping powers from first principles. However, obtaining application-relevant results often involves either costly averages over multiple calculations or ad hoc selection of a representative ion trajectory. We consider a broadly applicable, quantitative metric for evaluating and optimizing trajectories in this context. This methodology enables rigorous analysis of the failure modes of various common trajectory choices in crystalline materials. Although randomly selecting trajectories is common practice in stopping power calculations in solids, we show that nearly 30% of random trajectories in an FCC aluminium crystal will not representatively sample the material over the time and length scales feasibly simulated with TDDFT, and unrepresentative choices incur errors of up to 60%. We also show that finite-size effects depend on ion trajectory via "ouroboros" effects beyond the prevailing plasmon-based interpretation, and we propose a cost-reducing scheme to obtain converged results even when expensive core-electron contributions preclude large supercells. This work helps to mitigate poorly controlled approximations in first-principles stopping power calculations, allowing 1-2 order of magnitude cost reductions for obtaining representatively averaged and converged results.

Warm dense matter (WDM) is now routinely created and probed in laboratories around the world, providing unprecedented insights into conditions achieved in stellar atmospheres, planetary interiors, and inertial confinement fusion experiments. However, the interpretation of these experiments is often filtered through models with systematic errors that are difficult to quantify. Due to the simultaneous presence of quantum degeneracy and thermal excitation, processes in which free electrons are de-excited into thermally unoccupied bound states transferring momentum and energy to a scattered x-ray photon become viable. Here we show that such free-bound transitions are a particular feature of WDM and vanish in the limits of cold and hot temperatures. The inclusion of these processes into the analysis of recent X-ray Thomson Scattering experiments on WDM at the National Ignition Facility and the Linac Coherent Light Source significantly improves model fits, indicating that free-bound transitions have been observed without previously being identified. This interpretation is corroborated by agreement with a recently developed model-free thermometry technique and presents an important step for precisely characterizing and understanding the complex WDM state of matter.

SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques. Utilizing scanning tunneling microscopy (STM) to track molecular beam epitaxy (MBE) growth, we image surface atomic structure following deposition of each heterostructure layer revealing nanosized SiGe undulations, disordered strained-Si atomic steps, and nonconformal uncorrelated roughness between interfaces. Since phenomena such as atomic intermixing during subsequent overgrowth inevitably modify interfaces, we measure post-growth structure via cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Features such as nanosized roughness remain intact, but atomic step structure is indiscernible in $1.0\pm 0.4$~nm-wide intermixing at interfaces. Convolving STM and HAADF-STEM data yields 3D structures capturing interface roughness and intermixing. We utilize the structures in an atomistic multivalley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of roughly $\pm$ $50\%$ owing to alloy disorder, and (2) roughness-induced double-dot detuning bias energy variability of order $1-10$ meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder., Comment: 12 pages, 6 figures

We present a formally exact and simulation-free approach for the normalization of X-ray Thomson scattering (XRTS) spectra based on the f-sum rule of the imaginary-time correlation function (ITCF). Our method works for any degree of collectivity, over a broad range of temperatures, and is applicable even in nonequilibrium situations. In addition to giving us model-free access to electronic correlations, this new approach opens up the intriguing possibility to extract a plethora of physical properties from the ITCF based on XRTS experiments.

Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the band structure and effective mass values of such $\delta$ layers, first modeling them as ordered supercells. Structural relaxation is found to have a significant impact on the impurity band energies and effective masses of the boron layers, but not the aluminum layers. However, disorder in the $\delta$ layers is found to lead to significant flattening of the bands in both cases. We calculate the local density of states and doping potential for these $\delta$-doped layers, demonstrating that their influence is highly localized with spatial extents at most 4 nm. We conclude that acceptor $\delta$-doped layers exhibit different electronic structure features dependent on both the dopant atom and spatial ordering. This suggests prospects for controlling the electronic properties of these layers if the local details of the incorporation chemistry can be fine tuned., Comment: Main text 8 pages, 6 figures + Appendices 3 pages, 2 figures

The ground state properties of quantum many-body systems are a subject of interest across chemistry, materials science, and physics. Thus, algorithms for finding ground states can have broad impacts. Variational quantum algorithms are one class of ground state algorithms that has received significant attention in recent years. These algorithms utilize a hybrid quantum-classical computing framework to prepare ground states on quantum computers. However, this requires solving a classical optimization problem that can become prohibitively expensive in high dimensions. Here, we develop formulations of feedback-based quantum algorithms for ground state preparation that can be used to address this challenge for two broad classes of Hamiltonians: Fermi-Hubbard Hamiltonians, and molecular Hamiltonians represented in second quantization. Feedback-based quantum algorithms are optimization-free; in place of classical optimization, quantum circuit parameters are set according to a deterministic feedback law derived from quantum Lyapunov control principles. This feedback law guarantees a monotonic improvement in solution quality with respect to the depth of the quantum circuit. A variety of numerical illustrations are provided that analyze the convergence and robustness of feedback-based quantum algorithms for these problem classes., Comment: 27 pages, 11 figures

The spectral gap occupies a role of central importance in many open problems in physics. We present an approach for evaluating the spectral gap of a Hamiltonian from a simple ratio of two expectation values, both of which are evaluated using a quantum state that is evolved in imaginary time. In principle, the only requirement is that the initial state is supported on both the ground and first excited states. We demonstrate this approach for the Fermi-Hubbard and transverse field Ising models through numerical simulation., Comment: 6 pages, 1 figure, 1 table

Simulations and diagnostics of high-energy-density plasmas and warm dense matter rely on models of material response properties, both static and dynamic (frequency-dependent). Here, we systematically investigate variations in dynamic electron-ion collision frequencies $\nu(\omega)$ in warm dense matter using data from a self-consistent-field average-atom model. We show that including the full quantum density of states, strong collisions, and inelastic collisions lead to significant changes in $\nu(\omega)$. These changes result in red shifts and broadening of the plasmon peak in the dynamic structure factor, an effect observable in x-ray Thomson scattering spectra, and modify stopping powers around the Bragg peak. These changes improve the agreement of computationally efficient average-atom models with first-principles time-dependent density functional theory in warm dense aluminum, carbon, and deuterium.

Quantum algorithms for simulating electronic ground states are slower than popular classical mean-field algorithms such as Hartree-Fock and density functional theory, but offer higher accuracy. Accordingly, quantum computers have been predominantly regarded as competitors to only the most accurate and costly classical methods for treating electron correlation. However, here we tighten bounds showing that certain first quantized quantum algorithms enable exact time evolution of electronic systems with exponentially less space and polynomially fewer operations in basis set size than conventional real-time time-dependent Hartree-Fock and density functional theory. Although the need to sample observables in the quantum algorithm reduces the speedup, we show that one can estimate all elements of the $k$-particle reduced density matrix with a number of samples scaling only polylogarithmically in basis set size. We also introduce a more efficient quantum algorithm for first quantized mean-field state preparation that is likely cheaper than the cost of time evolution. We conclude that quantum speedup is most pronounced for finite temperature simulations and suggest several practically important electron dynamics problems with potential quantum advantage., Comment: 31 pages, 2 tables, 1 figure

Matter at extreme temperatures and pressures -- commonly known as warm dense matter (WDM) in the literature -- is ubiquitous throughout our Universe and occurs in a number of astrophysical objects such as giant planet interiors and brown dwarfs. Moreover, WDM is very important for technological applications such as inertial confinement fusion, and is realized in the laboratory using different techniques. A particularly important property for the understanding of WDM is given by its electronic density response to an external perturbation. Such response properties are routinely probed in x-ray Thomson scattering (XRTS) experiments, and, in addition, are central for the theoretical description of WDM. In this work, we give an overview of a number of recent developments in this field. To this end, we summarize the relevant theoretical background, covering the regime of linear-response theory as well as nonlinear effects, the fully dynamic response and its static, time-independent limit, and the connection between density response properties and imaginary-time correlation functions (ITCF). In addition, we introduce the most important numerical simulation techniques including ab initio path integral Monte Carlo (PIMC) simulations and different thermal density functional theory (DFT) approaches. From a practical perspective, we present a variety of simulation results for different density response properties, covering the archetypal model of the uniform electron gas and realistic WDM systems such as hydrogen. Moreover, we show how the concept of ITCFs can be used to infer the temperature from XRTS measurements of arbitrarily complex systems without the need for any models or approximations. Finally, we outline a strategy for future developments based on the close interplay between simulations and experiments.

A large body of work has demonstrated that parameterized artificial neural networks (ANNs) can efficiently describe ground states of numerous interesting quantum many-body Hamiltonians. However, the standard variational algorithms used to update or train the ANN parameters can get trapped in local minima, especially for frustrated systems and even if the representation is sufficiently expressive. We propose a parallel tempering method that facilitates escape from such local minima. This methods involves training multiple ANNs independently, with each simulation governed by a Hamiltonian with a different "driver" strength, in analogy to quantum parallel tempering, and it incorporates an update step into the training that allows for the exchange of neighboring ANN configurations. We study instances from two classes of Hamiltonians to demonstrate the utility of our approach using Restricted Boltzmann Machines as our parameterized ANN. The first instance is based on a permutation-invariant Hamiltonian whose landscape stymies the standard training algorithm by drawing it increasingly to a false local minimum. The second instance is four hydrogen atoms arranged in a rectangle, which is an instance of the second quantized electronic structure Hamiltonian discretized using Gaussian basis functions. We study this problem in a minimal basis set, which exhibits false minima that can trap the standard variational algorithm despite the problem's small size. We show that augmenting the training with quantum parallel tempering becomes useful to finding good approximations to the ground states of these problem instances., Comment: 13 pages, 6 figures. v2: updated Figs. 3, 4, and 5. v3. included two new QPT schemes. Updated format to SciPost format. 30 pages, 11 figures. v4. Fixed typo in Eqt. 10 and minor correction in Conclusion. 30 pages, 11 figures. Submission to SciPost

Adiabatic time evolution can be used to prepare a complicated quantum many-body state from one that is easier to synthesize and Trotterization can be used to implement such an evolution digitally. The complex interplay between non-adiabaticity and digitization influences the infidelity of this process. We prove that the first-order Trotterization of a complete adiabatic evolution has a cumulative infidelity that scales as $\mathcal O(T^{-2} \delta t^2)$ instead of $\mathcal O(T^2 \delta t^2)$ expected from general Trotter error bounds, where $\delta t$ is the time step and $T$ is the total time. This result suggests a self-healing mechanism and explains why, despite increasing $T$, infidelities for fixed-$\delta t$ digitized evolutions still decrease for a wide variety of Hamiltonians. It also establishes a correspondence between the Quantum Approximate Optimization Algorithm (QAOA) and digitized quantum annealing., Comment: 5+ pages and Appendices

Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH$_3$ dissociation leading to P incorporation on Si(100)-2$\times$1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2$\times$3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $\delta$-layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$, as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches., Comment: Main text 24 pages, 5 figures + Appendecies 8 pages, 3 figures

We investigate shock-compressed copper in the warm dense matter regime by means of density functional theory molecular dynamics simulations. We use neural-network-driven interatomic potentials to increase the size of the simulation box and extract thermodynamic properties in the hydrodynamic limit. We show the agreement of our simulation results with experimental data for solid copper at ambient conditions and liquid copper near the melting point under ambient pressure. Furthermore, a thorough analysis of the dynamic ion-ion structure factor in shock-compressed copper is performed and the adiabatic speed of sound is extracted and compared with experimental data., Comment: 13 pages, 14 figures, 1 table, accepted at Physical Review B

BCl$_3$ is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl$_3$ on Si(100) at different annealing temperatures. We demonstrate that BCl$_3$ adsorbs selectively without a reaction barrier, and subsequently dissociates relatively easily with reaction barriers $\approx$1 eV. Using this dissociation pathway, we parameterize a Kinetic Monte Carlo model to predict B incorporation rates as a function of dosing conditions. STM is used to image BCl$_{3}$ adsorbates, identifying several surface configurations and tracking the change in their distribution as a function of the annealing temperature, matching predictions of the kinetic model well. This straightforward pathway for atomic-precision acceptor doping helps enable a wide range of applications including bipolar nanoelectronics, acceptor-based qubits, and superconducting Si., Comment: 20 pages, 5 figures, Main text + supporting info

The extreme sensitivity of 2D materials to defects and nanostructure requires precise imaging techniques to verify presence of desirable and absence of undesirable features in the atomic geometry. Helium-ion beams have emerged as a promising materials imaging tool, achieving up to 20 times higher resolution and 10 times larger depth-of-field than conventional or environmental scanning electron microscopes. Here, we offer first-principles theoretical insights to advance ion-beam imaging of atomically thin materials by performing real-time time-dependent density functional theory simulations of single impacts of 10-200 keV light ions in free-standing graphene. We predict that detecting electrons emitted from the back of the material (the side from which the ion exits) would result in up to 3 times higher signal and up to 5 times higher contrast images, making 2D materials especially compelling targets for ion-beam microscopy. We also find that the charge induced in the graphene equilibrates on a sub-fs time scale, leading to only slight disturbances in the carbon lattice that are unlikely to damage the atomic structure for any of the beam parameters investigated here.

Bound-bound transitions can occur when localized atomic orbitals are thermally depleted, allowing excitations that would otherwise be forbidden at zero temperature. We predict signatures of bound-bound transitions in x-ray Thomson scattering measurements of laboratory-accessible warm dense conditions. Efficient average-atom models amended to include quasibound states achieve continuity of observables under ionization and agree with time-dependent density functional theory in their prediction of these scattering signatures, which hold compelling diagnostic potential for high-energy-density experiments., Comment: 6 pages, 3 figures. Preprint for PNP17

Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. Here we describe the design of a nanoelectronic device where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The strain drives spin transitions by modulating the nuclear quadrupole interaction. We adopt an AlN piezoelectric actuator compatible with standard silicon metal-oxide-semiconductor processing, and optimize the device layout to maximize the NAR drive. We predict NAR Rabi frequencies of order 200 Hz for a single $^{123}$Sb nucleus in a wide region of the device. Spin transitions driven directly by electric fields are suppressed in the center of the device, allowing the observation of pure NAR. Using electric field gradient-elastic tensors calculated by density-functional theory, we extend our predictions to other high-spin group-V donors in silicon, and to the isoelectronic $^{73}$Ge atom., Comment: 6 pages, 5 figures

Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B$_2$H$_6$), boron trichloride (BCl$_3$), and aluminum trichloride in both monomer (AlCl$_3$) and dimer forms (Al$_2$Cl$_6$), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\circ}$C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices., Comment: 10 pages, 5 figures

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins., Comment: 51 pages, including supplementary information. v3 reflects the final published version

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate., Comment: 20 pages, 13 figures

The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-doping techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosed substrate at temperatures below 450 $^{\circ}$C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 $^{\circ}$C and above, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a $\sim$2.7 nm thick $\delta$-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl$_{3}$ as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing., Comment: 35 pages, 8 figures

Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.

We present an extension to the robust phase estimation protocol, which can identify incorrect results that would otherwise lie outside the expected statistical range. Robust phase estimation is increasingly a method of choice for applications such as estimating the effective process parameters of noisy hardware, but its robustness is dependent on the noise satisfying certain threshold assumptions. We provide consistency checks that can indicate when those thresholds have been violated, which can be difficult or impossible to test directly. We test these consistency checks for several common noise models, and identify two possible checks with high accuracy in locating the point in a robust phase estimation run at which further estimates should not be trusted. One of these checks may be chosen based on resource availability, or they can be used together in order to provide additional verification., Comment: 22 pages, 8 figures, including 4 appendices

Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices., Comment: Version accepted for open access publication in Journal of Physics: Materials. Added keywords, additional text to the abstract, additional discussion of interfaces, and additional references. Consolidated references into one section at the end of the document instead of one part for the main article and one part for the supplementary material

Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields., Comment: Main text and figures followed by methods, extended data, and supplementary information

As electronic structure simulations continue to grow in size, the system-size scaling of computational costs increases in importance relative to cost prefactors. Presently, linear-scaling costs for three-dimensional systems are only attained by localized or randomized algorithms that have large cost prefactors in the difficult regime of low-temperature metals. Using large copper clusters in a minimal-basis semiempirical model as our reference system, we study the costs of these algorithms relative to a conventional cubic-scaling algorithm using matrix diagonalization and a recent quadratic-scaling algorithm using sparse matrix factorization and rational function approximation. The linear-scaling algorithms are competitive at the high temperatures relevant for warm dense matter, but their cost prefactors are prohibitive near ambient temperatures. To further reduce costs, we consider hybridized algorithms that combine localized and randomized algorithms. While simple hybridized algorithms do not improve performance, more sophisticated algorithms using recent concepts from structured linear algebra show promising initial performance results on a simple-cubic orthogonal tight-binding model., Comment: 19 pages, 7 figures

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS., Comment: The conference proceedings version incorrectly displays the orientation of the magnetic field in figure 1; this version is correct

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $\mu$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise., Comment: Submitted July 13, 2017. Supplementary information included with the paper

Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform., Comment: 7 pages, 4 figures

X-Ray Thomson Scattering (XRTS) is an important experimental technique used to measure the temperature, ionization state, structure, and density of warm dense matter (WDM). The fundamental property probed in these experiments is the electronic dynamic structure factor (DSF). In most models, this is decomposed into three terms [Chihara, J. Phys. F: Metal Phys. {\bf 17}, 295 (1987)] representing the response of tightly bound, loosely bound, and free electrons. Accompanying this decomposition is the classification of electrons as either bound or free, which is useful for gapped and cold systems but becomes increasingly questionable as temperatures and pressures increase into the WDM regime. In this work we provide unambiguous first principles calculations of the dynamic structure factor of warm dense beryllium, independent of the Chihara form, by treating bound and free states under a single formalism. The computational approach is real-time finite-temperature time-dependent density functional theory (TDDFT) being applied here for the first time to WDM. We compare results from TDDFT to Chihara-based calculations for experimentally relevant conditions in shock-compressed beryllium., Comment: 12 pages, 8 figures, and 1 table. 6 pages main manuscript

An outstanding challenge of theoretical electronic structure is the description of van der Waals (vdW) interactions in molecules and solids. Renewed interest in resolving this is in part motivated by the technological promise of layered systems including graphite, transition metal dichalcogenides, and more recently, black phosphorus, in which the interlayer interaction is widely believed to be dominated by these types of forces. We report a series of quantum Monte Carlo (QMC) calculations for bulk black phosphorus and related few-layer phosphorene, which elucidate the nature of the forces that bind these systems and provide benchmark data for the energetics of these systems. We find a significant charge redistribution due to the interaction between electrons on adjacent layers. Comparison to density functional theory (DFT) calculations indicate not only wide variability even among different vdW corrected functionals, but the failure of these functionals to capture the trend of reorganization predicted by QMC. The delicate interplay of steric and dispersive forces between layers indicate that few-layer phosphorene presents an unexpected challenge for the development of vdW corrected DFT., Comment: 8 pages, 6 figures

Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally solve the coupled six-valley Shindo-Nara equations, including silicon's full Bloch functions. Surprisingly, we find that including the full Bloch functions necessitates a tetrahedral, rather than spherical, donor central cell correction to accurately reproduce the experimental energy spectrum of a phosphorus impurity in silicon. We cross-validate this method against atomistic tight-binding calculations, showing that the two theories agree well for the calculation of donor-donor tunnel coupling. Further, we benchmark our results by performing a statistical uncertainty analysis, confirming that derived quantities such as the wave function profile and tunnel couplings are robust with respect to variational energy fluctuations. Finally, we apply this method to exhaustively enumerate the tunnel coupling for all donor-donor configurations within a large search volume, demonstrating conclusively that the tunnel coupling has no spatially stable regions. Though this instability is problematic for reliably coupling donor pairs for two-qubit operations, we identify specific target locations where donor qubits can be placed with scanning tunneling microscopy technology to achieve reliably large tunnel couplings., Comment: 10 pages, 4 figures, 3 supplemental data files

In a recent Letter, Baer et al. present a stochastic method for Kohn-Sham density functional theory calculations. Their convergence criterion is the self-averaging total energy per electron, which requires a number of statistical samples that decreases with system size and enables a sublinear-scaling computational cost. However, the electron density, atomic forces, orbital energies, and many other physical quantities do not self-average, and this procedure causes their statistical errors to grow with system size. Convergence of non-self-averaging quantities requires that the number of samples be maintained with system size and is incompatible with a sublinear-scaling cost., Comment: 1 page. Comment on [arXiv:1304.4053]

A nodal Discontinuous Galerkin (DG) method is derived for the analysis of time-domain (TD) scattering from doubly periodic PEC/dielectric structures under oblique interrogation. Field transformations are employed to elaborate a formalism that is free from any issues with causality that are common when applying spatial periodic boundary conditions simultaneously with incident fields at arbitrary angles of incidence. An upwind numerical flux is derived for the transformed variables, which retains the same form as it does in the original Maxwell problem for domains without explicitly imposed periodicity. This, in conjunction with the amenability of the DG framework to non-conformal meshes, provides a natural means of accurately solving the first order TD Maxwell equations for a number of periodic systems of engineering interest. Results are presented that substantiate the accuracy and utility of our method., Comment: Submitted to IEEE TAP on August 5th, 2013. Revision submitted on February 3rd, 2014

Generalized Langevin dynamics (GLD) arise in the modeling of a number of systems, ranging from structured fluids that exhibit a viscoelastic mechanical response, to biological systems, and other media that exhibit anomalous diffusive phenomena. Molecular dynamics (MD) simulations that include GLD in conjunction with external and/or pairwise forces require the development of numerical integrators that are efficient, stable, and have known convergence properties. In this article, we derive a family of extended variable integrators for the Generalized Langevin equation (GLE) with a positive Prony series memory kernel. Using stability and error analysis, we identify a superlative choice of parameters and implement the corresponding numerical algorithm in the LAMMPS MD software package. Salient features of the algorithm include exact conservation of the first and second moments of the equilibrium velocity distribution in some important cases, stable behavior in the limit of conventional Langevin dynamics, and the use of a convolution-free formalism that obviates the need for explicit storage of the time history of particle velocities. Capability is demonstrated with respect to accuracy in numerous canonical examples, stability in certain limits, and an exemplary application in which the effect of a harmonic confining potential is mapped onto a memory kernel., Comment: 23 pages, 8 figures