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20 results on '"Baccar, Sahbi"'

6. Electro-Geometrical Analysis of Transversal V-Fold Patch Antenna

Author

Ayyala, Kishore Ajay Kumar, primary, Thakur, Atul, additional, Yong, Zhou, additional, Yazdani, Syed Samar, additional, Thakur, Preeti, additional, Prasad, M. S., additional, Murad, Nour Mohammad, additional, Baccar, Sahbi, additional, Agnus, Benoît, additional, and Ravelo, Blaise, additional

Published
2022
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7. BANDPASS-TYPE NGD DESIGN ENGINEERING AND UNCERTAINTY ANALYSIS OF RLC-SERIES RESONATOR BASED PASSIVE CELL

Author

Mombo Boussougou, Yves Constant, Sambatra, Eric Jean Roy, Jaomiary, Antonio, Ramifidisoa, Lucius, Murad, Nour Mohammad, Kouadio, Jean-Paterne, Ngoho, Samuel, Sahoa, Frank Elliot, Baccar, Sahbi, Randriatsiferana, Rivo, Université des Sciences et Techniques de Masuku (USTM), Institut supérieur de technologie d'Antsiranana, Université d'Antsiranana (UNA), Physique et Ingénierie Mathématique pour l'Énergie, l'environnemeNt et le bâtimenT (PIMENT), Université de La Réunion (UR), Association Française de Science des Systèmes (AFSCET), AFSCET, Université d'Antananarivo, CESI : groupe d’Enseignement Supérieur et de Formation Professionnelle (CESI), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), Institut d'Électronique et des Technologies du numéRique (IETR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Nantes Université - pôle Sciences et technologie, and Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)

Subjects
[SPI]Engineering Sciences [physics], Electronic, Optical and Magnetic Materials
Abstract

International audience; This paper investigates the design method, characterization, and innovative uncertainty analysis of bandpass (BP) type negative group delay (NGD) passive cell. The lumped passive topology under study consists of a resistor and a passive RLC-series network. The voltage transfer function (VTF) based circuit theory introducing the BP NGD specification analytical expressions is established in function of the R, L and C lumped component parameters. The BP NGD performance is evaluated by figure of merit (FOM) formula. To demonstrate the BP NGD function, the design method was applied to a proof-of-concept (POC) operating at 125-kHz RFID standard center frequency. The BP NGD theory is validated by both AC simulation and measurement of POC and discrete component-based circuit prototype. Experimental BP NGD results in good agreement with calculation and simulation are obtained with NGD value of -36.77 μs, 8% NGD bandwidth, and an attenuation lower than -9.6 dB. Innovative expressions of BP NGD parameter uncertainties are established versus the POC circuit parameters. The BP NGD specification variations are interpreted with respect to the influence of constituting component uncertainties via comparison between the established NGD uncertainty theory and co-simulated sensitivity analyses.

Published
2022

13. Etude de la validité d'un macromodèle industriel SPICE d'un amplificateur opérationnel pour une simulation en hautes températures

Author

Baccar, Sahbi, Levi, Timothée, Dallet, Dominique, Shitikov, Vladimir, Barbara, François, Levi, Timothée, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Laboratory for Integrated Micro Mechatronics Systems (LIMMS), Centre National de la Recherche Scientifique (CNRS)-The University of Tokyo (UTokyo), and EPS Schlumberger

Subjects
[SDV.IB] Life Sciences [q-bio]/Bioengineering, [SDV.IB]Life Sciences [q-bio]/Bioengineering, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2012

19. Modeling Methodology for Analog Front-End Circuits Dedicated to High-Temperature Instrumentation and Measurement Applications.

Author

Baccar, Sahbi, Levi, Timothée, Dallet, Dominique, Shitikov, Vladimir, and Barbara, François

Subjects
*ANALOG-to-digital converters, *ELECTRONIC circuits, *OPERATIONAL amplifiers, *TEMPERATURE measurements, *HIGH temperatures, *ELECTRONIC instruments, *SIMULATION methods & models, *TRANSISTORS, *INTEGRATED circuits, *MATHEMATICAL models
Abstract

High-temperature (HT) applications have witnessed real growth during the last years. Several instrumentation and measurement applications require electronic circuits functioning reliably in HT. The analog-to-digital converter (ADC) and the operational amplifier (op-amp) are essential parts of measurement systems and circuits. They are the major parts of the analog front end of a conditioning signal circuit. Modeling HT electronic (HTE) components is a challenging task. The motivation of this paper is to describe an appropriate choice of the ADC and op-amp modeling approaches for HT ranges. The context of HTE systems is briefly described here and allows us to understand the challenges of such modeling. Comparing most known techniques enables us to make a suitable modeling choice for the HT. An appropriate methodology for modeling is presented. Some temperature-dependent models of ideal and nonideal ADC and op-amp are developed. The comparison of the simulation and experimental results is described to validate our approach choice. [ABSTRACT FROM PUBLISHER]

Published
2011
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