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The unoccupied electronic structure of tetrakis(phenyl)- and tetrakis(pentafluorophenyl)-porphyrin thick films deposited on SiO2/Si(100) native oxide surfaces has been thoroughly studied by combining the outcomes of near-edge X-ray absorption fine structure spectroscopy at the C, N, and F K-edges with those of scalar relativistic zeroth order regular approximation time-dependent density functional theory calculations carried out on isolated molecules. Both experimental and theoretical results concur to stress the electronic inertness of pristine porphyrin macrocycle based 1sC -> ?* and 1sN -> ?* transitions whose excitation energies are substantially unaffected upon fluorination. The obtained results complement those published by the same group about the occupied states of both molecules, thus providing the missing tile to get a thorough description of the halide decoration effects on the electronic structure of the tetrakis(phenyl)-porphyrin.

We report the development of sol-gel derived TiO2 thin films with adjustable and defined properties suitable for memristive cell fabrication. Memristive cells were developed by the sol-gel deposition of titania onto SiO2/Ti/Pt engineered electrodes via spin coating, followed by diverse curing and annealing procedures. The influence of the processing conditions and the sol's chemical composition on the film properties, and therefore on the memristive response, was studied by micro-Raman and transmission spectroscopies, profilometry, ellipsometry, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and X-ray absorption and diffraction spectroscopies (XAS and XRD). A memristive response was acquired from a number of these cells, revealing a dependence of the electrical behavior on minor changes in the TiO2 structure, electroforming parameters, and architecture. Thus, these properties provide a handle for fine-tuning electrical performance.

The transmittance of thin films of Sc deposited by evaporation in ultrahigh vacuum conditions has been investigated in the 20-1000 eV spectral range. Transmittance measurements were performed in situ on Se layers that were deposited over grids coated with a C support film. Transmittance measurements were used to obtain the extinction coefficient of Sc films at each individual photon energy investigated. These data, along with the data available in the literature for the rest of the spectrum, were used to obtain the refractive index of Sc by means of the Kramers-Kronig analysis. Sum-rule tests indicated an acceptable consistency of the data. (c) 2006 Optical Society of America