1. Factors affecting the electrical characteristics of cadmium mercury telluride crystals
- Author
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B.E. Bartlett, P. Capper, M.J.T. Quelch, and J.E. Harris
- Subjects
Cadmium ,Materials science ,Analytical chemistry ,Mercury telluride ,chemistry.chemical_element ,Dominant factor ,Mineralogy ,Condensed Matter Physics ,Inorganic Chemistry ,chemistry.chemical_compound ,Mercury vapour ,chemistry ,Impurity ,Materials Chemistry - Abstract
The electrical properties of cadmium mercury telluride crystals grown by both a cast-recrystallise and a normal freeze melt growth process have been investigated. Material equilibrated at high temperatures is found to be p-type and the carrier concentration is believed to be determined by native defects. Two models have been considered to explain the carrier concentrations found after low temperature heat treatment of slices in the presence of mercury vapour. These are based on native defects and on residual impurities respectively. It is concluded that for material grown by both growth processes the level of residual impurities is the dominant factor controlling carrier concentration.
- Published
- 1980
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