1. Synthesis and Luminescence Properties of Tb3+-Doped Aluminum Oxynitride
- Author
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Yu. F. Kargin, A. V. Ishchenko, V. V. Yagodin, B. V. Shul'gin, V. P. Sirotinkin, N. S. Akhmadullina, and A. S. Lysenkov
- Subjects
010302 applied physics ,Photoluminescence ,Materials science ,General Chemical Engineering ,Aluminate ,Doping ,Metals and Alloys ,Analytical chemistry ,chemistry.chemical_element ,Terbium ,Cathodoluminescence ,Phosphor ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,chemistry ,Impurity ,0103 physical sciences ,Materials Chemistry ,0210 nano-technology ,Luminescence - Abstract
We report an experimental study concerned with the synthesis and luminescence properties of Al5O6N aluminum oxynitride doped with Tb3+ in the concentration range 0.025–0.5 at %. All of the samples, prepared by firing appropriate mixtures in a nitrogen atmosphere at 1600°C, consisted predominantly of phase-pure γ-ALON (Al5O6N), with small amounts of impurity phases: Al7O3N5 aluminum oxynitride and Tb3Al5O12 terbium aluminate. Their pulsed cathodoluminescence and photoluminescence spectra contain emission bands typical of Tb3+ ions. The concentration threshold for luminescence quenching corresponds to a Tb3+ concentration at a level of 0.4 at %. A Tb3+ cross relaxation effect found in Al5O6N:Tb3+ is discussed and photoluminescence spectra are shown to be inhomogeneous at low Tb3+ concentrations in Al5O6N.
- Published
- 2019
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