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Digital accelerators in the latest generation of complementary metal–oxide–semiconductor processes support, multiply, and accumulate (MAC) operations at energy efficiencies spanning 10–100 fJ/Op. However, the operating speed for such MAC operations is often limited to a few hundreds of MHz. Optical or optoelectronic MAC operations on today’s SOI-based silicon photonic integrated circuit platforms can be realized at a speed of tens of GHz, leading to much lower latency and higher throughput. In this Perspective, we study the energy efficiency of integrated silicon photonic MAC circuits based on Mach–Zehnder modulators and microring resonators. We describe the bounds on energy efficiency and scaling limits for N × N optical networks with today’s technology based on the optical and electrical link budget. We also describe research directions that can overcome the current limitations.

Recently, integrated optics has become a functional platform for implementing machine learning algorithms and, in particular, neural networks. Photonic integrated circuits can straightforwardly perform vector-matrix multiplications with high efficiency and low power consumption by using weighting mechanism through linear optics. However, this cannot be said for the activation function, i.e., “threshold,” which requires either nonlinear optics or an electro-optic module with an appropriate dynamic range. Even though all-optical nonlinear optics is potentially faster, its current integration is challenging and is rather inefficient. Here, we demonstrate an electroabsorption modulator based on an indium tin oxide layer monolithically integrated into silicon photonic waveguides, whose dynamic range is used as a nonlinear activation function of a photonic neuron. The thresholding mechanism is based on a photodiode, which integrates the weighed products, and whose photovoltage drives the electroabsorption modulator. The synapse and neuron circuit is then constructed to execute a 200-node MNIST classification neural network used for benchmarking the nonlinear activation function and compared with an equivalent electronic module.