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Advances in the fabrication of low-disorder metallic materials have made it possible to reach the hydrodynamic regime of electronic transport. Here the authors investigate a hydrodynamic electron fluid in tungsten diphosphide and find that both electrical and thermal transport are limited by the quantum indeterminacy.

Substrate constraints and interfacial boundary layers in thin polystyrene films are explored with high strain rate indentations characteristic of thermomechanical terabit data storage operations. Under these impact-like conditions, the coupling of strain-rate and inertial effects leads to large plastic deformations relative to quasi-static indentations. Strain shielding is present when the plastic deformation radius exceeds ~65% of the film thickness. Thereafter, deformation is restricted by the rigid substrate, giving rise to elevated rim heights and interfacial shearing. The shielding effects were alleviated with use of a modulus-matched buffer layer between the polymer film and the substrate. A non-monotonic rheological gradient in the polymer films leads to the distribution of contact pressures between two asymptotic scenarios: (i) a compliant surface with a rigid sub-surface and (ii) a rigid surface with a compliant sub-surface. [ABSTRACT FROM AUTHOR]

The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materials have been considered for application in ultra-scaled interconnects (below 5 nm), due to their topologically protected surface states that have reduced electron scattering. Recent theoretical work on the topological chiral semimetal CoSi suggests that this material could offer lower resistivity than Cu at dimensions smaller than 10 nm. Here we investigate the scaling trend of textured and amorphous CoSi thin films, deposited by molecular beam epitaxy in a thickness range between 2 and 82.5 nm. Contrary to predictions of standard resistivity models, we report here a reduction in resistivity for thin amorphous CoSi films, which is instead consistent with surface-dominated transport. Moreover, magnetotransport measurements reveal significant enhancement of the magnetoresistance in scaled films, highlighting the complex transport mechanisms present in these highly disordered films at thicknesses of a few nanometers., (© 2024. The Author(s).)

Weyl semimetals are defined by their unique Fermi surface, comprising pairs of Weyl points of opposite chirality, connected through topological surface states. Angle-resolved photoemission spectroscopy (ARPES) has been used to verify the existence of the Weyl points and the Fermi arcs. However, ARPES is limited in resolution, leading to significant uncertainty when characterizing the shape of the Fermi surface of semimetals and measuring features such as the distance between the Weyl points. Here, to surpass the resolution of ARPES, we combine quantum oscillation measurements with transverse electron focusing experiments. These techniques offer complementary information, enabling the reconstruction of the distinctive peanut-shaped cross section of the Weyl Fermi surface and accurately determining the separation between Weyl points in the Weyl semimetal NbP. Our Letter showcases the integration of quantum oscillations and transverse electron focusing, allowing for the measurements of complex Fermi surface geometries, concurrently with carriers' transport properties, in high-mobility quantum materials.

The chiral anomaly - a hallmark of chiral spin-1/2 Weyl fermions - is an imbalance between left- and right-moving particles that underpins phenomena such as particle decay and negative longitudinal magnetoresistance in Weyl semimetals. The discovery that chiral crystals can host higher-spin generalizations of Weyl quasiparticles without high-energy counterparts, known as multifold fermions, raises the fundamental question of whether the chiral anomaly is a more general phenomenon. Answering this question requires materials with chiral quasiparticles within a sizable energy window around the Fermi level that are unaffected by extrinsic effects such as current jetting. Here, we report the chiral anomaly of multifold fermions in CoSi, which features multifold bands within ~0.85 eV of the Fermi level. By excluding current jetting through the squeezing test, we measure an intrinsic, longitudinal negative magnetoresistance. We develop a semiclassical theory to show that the negative magnetoresistance originates in the chiral anomaly, despite a sizable and detrimental orbital magnetic moment contribution. A concomitant non-linear Hall effect supports the multifold-fermion origin of the magnetotransport. Our work confirms the chiral anomaly of higher-spin generalizations of Weyl fermions, currently inaccessible outside solid-state platforms., (© 2024. The Author(s).)

With remarkable electrical and optical switching properties induced at low power and near room temperature (68 °C), vanadium dioxide (VO 2 ) has sparked rising interest in unconventional computing among the phase-change materials research community. The scalability and the potential to compute beyond the von Neumann model make VO 2 especially appealing for implementation in oscillating neural networks for artificial intelligence applications, to solve constraint satisfaction problems, and for pattern recognition. Its integration into large networks of oscillators on a Silicon platform still poses challenges associated with the stabilization in the correct oxidation state and the ability to fabricate a structure with predictable electrical behavior showing very low variability. In this work, the role played by the different annealing parameters applied by three methods (slow thermal annealing, flash annealing, and rapid thermal annealing), following the vanadium oxide atomic layer deposition, on the formation of VO 2 grains is studied and an optimal substrate stack configuration that minimizes variability between devices is proposed. Material and electrical characterizations are performed on the different films and a step-by-step recipe to build reproducible VO 2 -based oscillators is presented, which is argued to be made possible thanks to the introduction of a hafnium oxide (HfO 2 ) layer between the silicon substrate and the vanadium oxide layer. Up to seven nearly identical VO 2 -based devices are contacted simultaneously to create a network of oscillators, paving the way for large-scale implementation of VO 2 oscillating neural networks., (© 2024. The Author(s).)

Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices-attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm 2 /Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers., (© 2024. The Author(s).)

Molecules are predicted to be chemically tunable towards high thermoelectric efficiencies and they could outperform existing materials in the field of energy conversion. However, their capabilities at the more technologically relevant temperature of 300 K are yet to be demonstrated. A possible reason could be the lack of a comprehensive technique able to measure the thermal and (thermo)electrical properties, including the role of phonon conduction. Here, by combining the break junction technique with a suspended heat-flux sensor, we measured the total thermal and electrical conductance of a single molecule, at room temperature, together with its Seebeck coefficient. We used this method to extract the figure of merit zT of a tailor-made oligo(phenyleneethynylene)-9,10-anthracenyl molecule with dihydrobenzo[b]thiophene anchoring groups (DHBT-OPE3-An), bridged between gold electrodes. The result is in excellent agreement with predictions from density functional theory and molecular dynamics. This work represents the first measurement, within the same setup, of experimental zT of a single molecule at room temperature and opens new opportunities for the screening of several possible molecules in the light of future thermoelectric applications. The protocol is verified using SAc-OPE3, for which individual measurements for its transport properties exist in the literature., (© 2023. The Author(s).)

In recent times the chiral semimetal cobalt monosilicide (CoSi) has emerged as a prototypical, nearly ideal topological conductor hosting giant, topologically protected Fermi arcs. Exotic topological quantum properties have already been identified in CoSi bulk single crystals. However, CoSi is also known for being prone to intrinsic disorder and inhomogeneities, which, despite topological protection, risk jeopardizing its topological transport features. Alternatively, topology may be stabilized by disorder, suggesting the tantalizing possibility of an amorphous variant of a topological metal, yet to be discovered. In this respect, understanding how microstructure and stoichiometry affect magnetotransport properties is of pivotal importance, particularly in case of low-dimensional CoSi thin films and devices. Here we comprehensively investigate the magnetotransport and magnetic properties of ≈25 nm Co 1- x Si x thin films grown on a MgO substrate with controlled film microstructure (amorphous vs textured) and chemical composition (0.40 < x < 0.60). The resistivity of Co 1- x Si x thin films is nearly insensitive to the film microstructure and displays a progressive evolution from metallic-like (dρ xx /d T > 0) to semiconducting-like (dρ xx /d T < 0) regimes of conduction upon increasing the silicon content. A variety of anomalies in the magnetotransport properties, comprising for instance signatures consistent with quantum localization and electron-electron interactions, anomalous Hall and Kondo effects, and the occurrence of magnetic exchange interactions, are attributable to the prominent influence of intrinsic structural and chemical disorder. Our systematic survey brings to attention the complexity and the challenges involved in the prospective exploitation of the topological chiral semimetal CoSi in nanoscale thin films and devices., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

Due to their structured density of states, molecular junctions provide rich resources to filter and control the flow of electrons and phonons. Here we compute the out of equilibrium current-voltage characteristics and dissipated heat of some recently synthesized oligophenylenes (OPE3) using the Density Functional based Tight-Binding (DFTB) method within Non-Equilibrium Green's Function Theory (NEGF). We analyze the Peltier cooling power for these molecular junctions as function of a bias voltage and investigate the parameters that lead to optimal cooling performance. In order to quantify the attainable temperature reduction, an electro-thermal circuit model is presented, in which the key electronic and thermal transport parameters enter. Overall, our results demonstrate that the studied OPE3 devices are compatible with temperature reductions of several K. Based on the results, some strategies to enable high performance devices for cooling applications are briefly discussed.

There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, significant thermal issues affect their operation. The complexity of geometrical parameters and the various materials involved hinder the extraction of clear design guidelines and operation strategies. Here, we present a systematic thermal analysis of InP-on-Si micro- and nanocavity lasers based on steady-state and transient thermal simulations and experimental analysis. In particular, we investigate the use of metal cavities for improving the thermal properties of InP-on-Si micro- and nanocavity lasers. Heating of lasers is studied by using Raman thermometry and the results agree well with simulation results, both revealing a temperature reduction of hundreds of kelvins for the metal-clad cavity. Transient simulations are carried out to improve our understanding of the dynamic temperature variation under pulsed and continuous wave pumping conditions. The results show that the presence of a metal cladding not only increases the overall efficiency in heat dissipation but also causes a much faster temperature response. Together with optical experimental results under pulsed pumping, we conclude that a pulse width of 10 ns and a repetition rate of 100 kHz is the optimal pumping condition for a 2 μm wide square cavity., Competing Interests: The authors declare no competing financial interest., (© 2022 The Authors. Published by American Chemical Society.)

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In 0.5 Ga 0.5 As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm 2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f 3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results., (© 2022. The Author(s).)

We present the design of a variable temperature setup that uses a pulse tube cryocooler to perform break-junction experiments at variable temperatures ranging from 12 K to room temperature. The use of pulse tube coolers is advantageous because they are easy to use, can be highly automatized, and used to avoid wastage of cryogenic fluids. This is the reason why dry cryostats are conquering more and more fields in cryogenic physics. However, the main drawback is the level of vibration that can be up to several micrometers at the cold-head. The vibrations make the operation of scanning probe-based microscopes challenging. We implemented vibration-damping techniques that allow obtaining a vibration level of 12 pm between the tip and sample. With these adaptations, we show the possibility to perform break junction measurements in a cryogenic environment and keep in place atomic chains of a few nanometers between the two electrodes.

As conductors in electronic applications shrink, microscopic conduction processes lead to strong deviations from Ohm's law. Depending on the length scales of momentum conserving (l MC ) and relaxing (l MR ) electron scattering, and the device size (d), current flows may shift from ohmic to ballistic to hydrodynamic regimes. So far, an in situ methodology to obtain these parameters within a micro/nanodevice is critically lacking. In this context, we exploit Sondheimer oscillations, semi-classical magnetoresistance oscillations due to helical electronic motion, as a method to obtain l MR even when l MR  ≫ d. We extract l MR from the Sondheimer amplitude in WP 2 , at temperatures up to T ~ 40 K, a range most relevant for hydrodynamic transport phenomena. Our data on μm-sized devices are in excellent agreement with experimental reports of the bulk l MR and confirm that WP 2 can be microfabricated without degradation. These results conclusively establish Sondheimer oscillations as a quantitative probe of l MR in micro-devices., (© 2021. The Author(s).)

Using scanning thermal microscopy, we have mapped the spatial distribution of temperatures in an operating nanoscale device formed from a magnetic injector, an Ag connecting wire, and a magnetic detector. An analytical model explained the thermal diffusion over the measured temperature range (2-300 K) and injector-detector separation (400-3000 nm). The characteristic diffusion lengths of the Peltier and Joule heat differ remarkably below 60 K, a fact that can be explained by the onset of ballistic phonon heat transfer in the substrate.

In this work we present an in-memory computing platform based on coupled VO 2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area density and oscillation frequency. Further, the crossbar devices exhibit low variability and extended reliability, hence, enabling experiments on 4-coupled oscillator. We demonstrate the neuromorphic computing capabilities using the phase relation of the oscillators. As an application, we propose to replace digital filtering operation in a convolutional neural network with oscillating circuits. The concept is tested with a VGG13 architecture on the MNIST dataset, achieving performances of 95% in the recognition task., Competing Interests: EC, JC, KM, BG, and SK were employed by IBM. The remaining authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest., (Copyright © 2021 Corti, Cornejo Jimenez, Niang, Robertson, Moselund, Gotsmann, Ionescu and Karg.)

The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168 nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al2O3 shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical current, for both Joule and Peltier effects. An analysis is developed that is able to extract the thermal and thermoelectric properties including thermal conductivity, the thermal boundary resistance to the substrate and the Peltier coefficient from a single measurement. Our investigations demonstrate the potential of quantitative measurements of temperature around self-heated devices and structures down to the scattering length of heat carriers.

We report the synthesis and the single-molecule transport properties of three new oligo(phenyleneethynylene) (OPE3) derivatives possessing terminal dihydrobenzo[b]thiophene (DHBT) anchoring groups and various core substituents (phenylene, 2,5-dimethoxyphenylene and 9,10-anthracenyl). Their electronic conductance and their Seebeck coefficient have been determined using scanning tunneling microscopy-based break junction (STM-BJ) experiments between gold electrodes. The transport properties of the molecular junctions have been modelled using DFT-based computational methods which reveal a specific binding of the sulfur atom of the DHBT anchor to the electrodes. The experimentally determined Seebeck coefficient varies between -7.9 and -11.4 μV K -1 in the series and the negative sign is consistent with charge transport through the LUMO levels of the molecules.

Molecular junctions exhibit a rich and tunable set of thermal transport phenomena. However, the predicted high thermoelectric efficiencies, phonon quantum interference effects, rectification, and nonlinear heat transport properties of organic molecules are yet to be verified because suitable experimental techniques have been missing. Here, by combining the break junction technique with suspended heat-flux sensors with picowatt per Kelvin sensitivity, we measured the thermal and electrical conductance of single organic molecules at room temperature simultaneously. We used this method to study the thermal transport properties of two model systems, namely, dithiol-oligo(phenylene ethynylene) and octane dithiol junctions with gold electrodes. In agreement with our density functional theory and phase-coherent transport calculations, we show that heat transport across these systems is governed by the phonon mismatch between the molecules and the metallic electrodes. This work represents the first measurement of thermal transport through single molecules and opens new opportunities for studying heat management at the nanoscale level.

In stark contrast to ordinary metals, in materials in which electrons strongly interact with each other or with phonons, electron transport is thought to resemble the flow of viscous fluids. Despite their differences, it is predicted that transport in both conventional and correlated materials is fundamentally limited by the uncertainty principle applied to energy dissipation. Here we report the observation of experimental signatures of hydrodynamic electron flow in the Weyl semimetal tungsten diphosphide. Using thermal and magneto-electric transport experiments, we find indications of the transition from a conventional metallic state at higher temperatures to a hydrodynamic electron fluid below 20 K. The hydrodynamic regime is characterized by a viscosity-induced dependence of the electrical resistivity on the sample width and by a strong violation of the Wiedemann-Franz law. Following the uncertainty principle, both electrical and thermal transport are bound by the quantum indeterminacy, independent of the underlying transport regime.

As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properties. Likewise, an increased local temperature due to Joule heating at contacts and the formation of hot spots may put limits on device integration. Therefore, being able to observe profiles of both electronic and thermal device properties at the nanoscale is important. Here, we show measurements by scanning thermal and Kelvin probe force microscopy of the same 60 nm diameter indium arsenide nanowire in operation. The observed temperature along the wire is substantially elevated near the contacts and deviates from the bell-shaped temperature profile one would expect from homogeneous heating. Voltage profiles acquired by Kelvin probe force microscopy not only allow us to determine the electrical nanowire conductivity, but also to identify and quantify sizable and non-linear contact resistances at the buried nanowire-electrode interfaces. Complementing these data with thermal measurements, we obtain a device model further permitting separate extraction of the local thermal nanowire and interface conductivities.

The conservation laws, such as those of charge, energy and momentum, have a central role in physics. In some special cases, classical conservation laws are broken at the quantum level by quantum fluctuations, in which case the theory is said to have quantum anomalies. One of the most prominent examples is the chiral anomaly, which involves massless chiral fermions. These particles have their spin, or internal angular momentum, aligned either parallel or antiparallel with their linear momentum, labelled as left and right chirality, respectively. In three spatial dimensions, the chiral anomaly is the breakdown (as a result of externally applied parallel electric and magnetic fields) of the classical conservation law that dictates that the number of massless fermions of each chirality are separately conserved. The current that measures the difference between left- and right-handed particles is called the axial current and is not conserved at the quantum level. In addition, an underlying curved space-time provides a distinct contribution to a chiral imbalance, an effect known as the mixed axial-gravitational anomaly, but this anomaly has yet to be confirmed experimentally. However, the presence of a mixed gauge-gravitational anomaly has recently been tied to thermoelectrical transport in a magnetic field, even in flat space-time, suggesting that such types of mixed anomaly could be experimentally probed in condensed matter systems known as Weyl semimetals. Here, using a temperature gradient, we observe experimentally a positive magneto-thermoelectric conductance in the Weyl semimetal niobium phosphide (NbP) for collinear temperature gradients and magnetic fields that vanishes in the ultra-quantum limit, when only a single Landau level is occupied. This observation is consistent with the presence of a mixed axial-gravitational anomaly, providing clear evidence for a theoretical concept that has so far eluded experimental detection.

Heat transport and dissipation at the nanoscale severely limit the scaling of high-performance electronic devices and circuits. Metallic atomic junctions serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects that occur in one-dimensional (1D) systems. Whereas charge transport in atomic junctions has been studied intensively in the past two decades, heat transport remains poorly characterized because it requires the combination of a high sensitivity to small heat fluxes and the formation of stable atomic contacts. Here we report heat-transfer measurements through atomic junctions and analyse the thermal conductance of single-atom gold contacts at room temperature. Simultaneous measurements of charge and heat transport reveal the proportionality of electrical and thermal conductance, quantized with the respective conductance quanta. This constitutes a verification of the Wiedemann-Franz law at the atomic scale.

Traditionally, nanomaterial profiling using a single-molecule-terminated scanning probe is performed at the vacuum-solid interface often at a few Kelvin, but is not a notion immediately associated with liquid-solid interface at room temperature. Here, using a scanning tunnelling probe functionalized with a single C60 molecule stabilized in a high-density liquid, we resolve low-dimensional surface defects, atomic interfaces and capture Ångstrom-level bond-length variations in single-layer graphene and MoS2. Atom-by-atom controllable imaging contrast is demonstrated at room temperature and the electronic structure of the C60-metal probe complex within the encompassing liquid molecules is clarified using density functional theory. Our findings demonstrates that operating a robust single-molecular probe is not restricted to ultra-high vacuum and cryogenic settings. Hence the scope of high-precision analytics can be extended towards resolving sub-molecular features of organic elements and gauging ambient compatibility of emerging layered materials with atomic-scale sensitivity under experimentally less stringent conditions.

Measuring temperature is a central challenge in nanoscience and technology. Addressing this challenge, we report the development of a high-vacuum scanning thermal microscope and a method for non-equilibrium scanning probe thermometry. The microscope is built inside an electromagnetically shielded, temperature-stabilized laboratory and features nanoscopic spatial resolution at sub-nanoWatt heat flux sensitivity. The method is a dual signal-sensing technique inferring temperature by probing a total steady-state heat flux simultaneously to a temporally modulated heat flux signal between a self-heated scanning probe sensor and a sample. Contact-related artifacts, which so far limit the reliability of nanoscopic temperature measurements by scanning thermal microscopy, are minimized. We characterize the microscope's performance and demonstrate the benefits of the new thermometry approach by studying hot spots near lithographically defined constrictions in a self-heated metal interconnect.

Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed in integrated circuits or plasmonic nanostructures, can be used to modify the local properties of matter, govern physical processes, activate chemical reactions and trigger biological mechanisms in living organisms. The development of high-resolution thermometry techniques is essential for understanding local thermal non-equilibrium processes during the operation of numerous nanoscale devices. Here we present a technique to map temperature fields using a scanning thermal microscope. Our method permits the elimination of tip-sample contact-related artefacts, a major hurdle that so far has limited the use of scanning probe microscopy for nanoscale thermometry. We map local Peltier effects at the metal-semiconductor contacts to an indium arsenide nanowire and self-heating of a metal interconnect with 7 mK and sub-10 nm spatial temperature resolution.

Predicting the electronic framework of an organic molecule under practical conditions is essential if the molecules are to be wired in a realistic circuit. This demands a clear description of the molecular energy levels and dynamics as it adapts to the feedback from its evolving chemical environment and the surface topology. Here, we address this issue by monitoring in real-time the structural stability and intrinsic molecular resonance states of fullerene (C60)-based hybrid molecules in the presence of the solvent. Energetic levels of C60 hybrids are resolved by in situ scanning tunnelling spectroscopy with an energy resolution in the order of 0.1 eV at room-temperature. An ultra-thin organic spacer layer serves to limit contact metal-molecule energy overlap. The measured molecular conductance gap spread is statistically benchmarked against first principles electronic structure calculations and used to quantify the diversity in electronic species within a standard population of molecules. These findings provide important progress towards understanding conduction mechanisms at a single-molecular level and in serving as useful guidelines for rational design of robust nanoscale devices based on functional organic molecules.

Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes.

The kinetic signature of the β-relaxation of poly(methyl methacrylate) (PMMA) is investigated by friction force microscopy. The variation in friction force was measured as a function of scan velocity, temperature (300 K-410 K), and applied load using both sharp and blunt probe tips. The friction data show distinct maxima, which can be ascribed to the β-relaxation of PMMA. The contact area was varied over the ranges of approximately 20 to 70 nm(2) and 12,000 to 43,000 nm(2) through the use of probe tips with radii of approximately 15, 18, 1350, and 2650 nm. Kinetic analysis shows that the apparent activation energy of the β-relaxation decreases with the tip radius. Accompanying finite element simulations indicate that for the sharp tips a substantial subvolume of the polymer underneath the tip exceeds the yield stress of PMMA. This suggests that for small contact sizes and high stresses the activation barrier of the β-process decreases through the activation of the α-process by material yielding.

Evaluating the built-in functionality of nanomaterials under practical conditions is central for their proposed integration as active components in next-generation electronics. Low-dimensional materials from single atoms to molecules have been consistently resolved and manipulated under ultrahigh vacuum at low temperatures. At room temperature, atomic-scale imaging has also been performed by probing materials at the solid/liquid interface. We exploit this electrical interface to develop a robust electronic decoupling platform that provides precise information on molecular energy levels recorded using in situ scanning tunnelling microscopy/spectroscopy with high spatial and energy resolution in a high-density liquid environment. Our experimental findings, supported by ab initio electronic structure calculations and atomic-scale molecular dynamics simulations, reveal direct mapping of single-molecule structure and resonance states at the solid/liquid interface. We further extend this approach to resolve the electronic structure of graphene monolayers at atomic length scales under standard room-temperature operating conditions.

We present heat-transport measurements conducted with a vacuum-operated scanning thermal microscope to study the thermal conductance of monolayers of nine different alkane thiols self-assembled on Au(111) surfaces as a function of their length (2 to 18 methylene units). The molecular thermal conductance is probed in a confined area with a diameter below 10 nm in the contact between a silicon tip and the self-assembled monolayer. This yields a pWK(-1) sensitivity per molecule at a tip temperature of 200-300 °C versus the gold at room temperature. We found a conductance variance of up to a factor of 3 as a function of alkane chain length, with maximum conductance for a chain length of four carbon atoms.

Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).

Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less known pseudodirect bandgap configuration can be found in wurtzite (WZ) semiconductors: here electron and hole wave-functions overlap strongly but optical transitions between these states are impaired by symmetry. Switching between bandgap configurations would enable novel photonic applications but large anisotropic strain is normally needed to induce such band structure transitions. Here we show that the luminescence of WZ GaAs nanowires can be switched on and off, by inducing a reversible direct-to-pseudodirect band structure transition, under the influence of a small uniaxial stress. For the first time, we clarify the band structure of WZ GaAs, providing a conclusive picture of the energy and symmetry of the electronic states. We envisage a new generation of devices that can simultaneously serve as efficient light emitters and photodetectors by leveraging the strain degree of freedom.

Sliding friction between a silicon tip and a polymer bilayer system consisting of a polystyrene (PS) film covered with a few-nanometers-thick capping layer of hard plasma polymer is studied using friction force microscopy. The system was chosen to enable subsurface dissipation channels to be distinguished from surface friction. Frictional energy dissipation in the underlayer can be identified through the kinetics of the polymer relaxation modes that we measured using nanoscale friction experiments as a function of sample temperature, scanning velocity, and applied load. We found a strong nonlinear increase in friction as a function of applied load around the glass-transition temperature of the PS underlayer. This behavior is a clear signature of frictional dissipation occurring in the volume of the polystyrene layer, well below the surface of the sample. The time-temperature kinetics associated with frictional energy dissipation into the PS was found to be in agreement with the known material properties of PS. Moreover, the data was found to support the hypothesis that the observed friction can be understood as the sum of friction resulting from the relaxation process in the polymer underlayer induced by stress due to the sliding of the tip and a second term associated with dissipation due to sliding friction on the capping layer.

Superior thermal conductivity of graphene is frequently reported and used to justify its technical relevance for ultimately scaled devices. However, this extraordinary property is size dependent, and understanding of graphene's thermal properties in the quasiballistic thermal transport regime is lacking. To overcome this limitation, we directly probe local heat transfer into graphene by high-resolution scanning thermal microscopy on amorphous silicon oxide (SiO2) and crystalline silicon carbide (SiC). We quantify thickness-dependent thermal resistance modulations at sub-10-nm lateral resolution and thermal sensitivity for the individual atomic layers. On SiO2, we observe a decrease of thermal resistance with increasing number of graphene layers. We attribute this trend to the spreading of heat using the thickness dependence of graphene's thermal conductivity. On SiC, the heated tip-sample contact is scaled below the phonon mean free path of both the graphene and its supporting substrate. Consistently, we find the thermal interface resistances of the graphene top and bottom contacts dominating thermal transport.

The tremendous variety of nanotechnology experiments and tools to fabricate and characterize ever-smaller structures down to molecular or even atomic scales leads to stringent demands for appropriate, so-called "silent", premises that allow such susceptible experiments to be conducted. Reducing dimensions means smaller absolute optical and electrical signal levels, and consequently reduced signal-to-noise ratios. Hence, in addition to short-range disturbances inside the laboratory, remote long-range noise sources have to be considered for next-generation laboratories that aim at screening the disturbances and keeping the remaining values at utmost constancy. We present a novel laboratory concept that addresses simultaneously all the disturbances relevant for nanotechnology, namely, vibrations, electro-magnetic fields, temperature, humidity, and sound. Particular attention was paid to tackling the mutual derogation of the various measures to enable unprecedented performance of the novel research platform.

Strain engineering has been used to increase the charge carrier mobility of complementary metal-oxide-semiconductor transistors as well as to boost and tune the performance of optoelectronic devices, enabling wavelength tuning, polarization selectivity and suppression of temperature drifts. Semiconducting nanowires benefit from enhanced mechanical properties, such as increased yield strength, that turn out to be beneficial to amplify strain effects. Here we use photoluminescence (PL) to study the effect of uniaxial stress on the electronic properties of GaAs/Al0.3Ga0.7As/GaAs core/shell nanowires. Both compressive and tensile mechanical stress were applied continuously and reversibly to the nanowire, resulting in a remarkable decrease of the bandgap of up to 296 meV at 3.5% of strain. Raman spectra were measured and analyzed to determine the axial strain in the nanowire and the Poisson ratio in the <111> direction. In both PL and Raman spectra, we observe fingerprints of symmetry breaking due to anisotropic deformation of the nanowire. The shifts observed in the PL and Raman spectra are well described by bulk deformation potentials for band structure and phonon energies. The fact that exceptionally high elastic strain can be applied to semiconducting nanowires makes them ideally suited for novel device applications that require a tuning of the band structure over a broad range.

The control and repair of defects at metal/molecule interfaces is central to the realization of molecular electronic circuits with reproducible performance. The fundamental mechanism governing defect (pore) evolution on mica-supported metal surfaces, its propagation in self-assembled molecular layers, and its implications for molecular junction devices are discussed. Pore eradication by replacing mica with halide platforms coupled with elevated substrate temperature during metal deposition yields exceptionally ultraflat metal landscapes. In situ scanning tunneling microscopy further substantiates molecular locking at defect sites and upon defect healing; the emergence of a closely packed 2-D molecular architecture is demonstrated with nanometer-scale spatial resolution in liquids.

Fullerenes are considered anchoring groups for molecular electronics due to a large contact area and their affinity for noble metals. The conductances of fullerene-terminated molecules, however, are found to be even lower than for thiol termination. The effects of weak molecule-metal coupling and symmetry breaking are studied by transport measurements of C(60) and functionalized C(60). The results demonstrate highy efficient contacts between Au and C(60), despite of deposition from solution., (Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)