1. Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy
- Author
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Per-Olof Holtz, Göran V. Hansson, B. Adnane, W.-X. Ni, and Karl Fredrik Karlsson
- Subjects
Photoluminescence ,Materials science ,Physics and Astronomy (miscellaneous) ,Resonance ,molecular beam epitaxial growth ,self-assembly ,semiconductor quantum dots ,Ge-Si alloys ,Quantum dot ,Naturvetenskap ,luminescence ,Photoluminescence excitation ,Atomic physics ,Natural Sciences ,Spectroscopy ,Luminescence ,Excitation ,Molecular beam epitaxy - Abstract
Well-resolved photoluminescence excitation (PLE) spectra are reported for selfassembled SiGe dots grown on Si(100) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition. Original Publication:Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni, Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy, 2010, Applied Physics Letters, (96), 18, 181107.http://dx.doi.org/10.1063/1.3424789Copyright: American Institute of Physicshttp://www.aip.org/
- Published
- 2010
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