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The zinc oxide based varistor are widely used as circuit protective devices by literally absorbs these dangerous surges and spikes or grounding this unwanted magnitudes. In this research, zinc oxide is added with 0.5 mol % CaMnO3 as an additive and 0.2 mol % of rare earth doped of lanthanum oxide. Citrate-gel method is used as fabrication method. Complex compound undergoes sintering process which varied at 900 °C, 950 °C and 1000 °C, while, the sintering time are setting at 1 hour and 2 hours. Thermo gravimetric analysis (TGA) shows the forming of CaMnO3 at 334-1000 °C. Fourier Transform Infrared (FTIR) spectra proved that the functional group present are.-O-H, C-H and C-O. The surface morphology with the grains size below 1μm was observed by Scanning Electron Microscopy (SEM). The α varistor ceramics was calculated from data analysis of I-V characteristics obtained through a Source Measure Unit (Keithley 236). The calculation of α is done by using Origin Pro8.0 software. I-V characteristic shows the value of α in the range of 1.00 to 4.05.

In this research, (80-x) mol% zinc oxide with 20 mol% CaMnO3 as the additive and (x) mol% erbium oxide Er2O3 as the doping material where x = 0.5, 1.0 and 1.5. Aims of this work are to elucidate the effects of doping material on microstructure ZnO and nonlinear characteristics of ZnO based varistor ceramics. A compound comprising ZnO-CaMnO3-Er2O3 underwent pre-sintering at 500 °C for 4 hours and sintering process at temperature of 1100 °C, 1200 °C and 1300 °C with the soaking time of 1.5 hours and 4.5 hours. X-ray diffraction patterns CaMnO3 spinal and additional phases containing Er in the confirmed the presence of synthesized compounds.The disappeared of hydroxyl and carbonyl functional group was observed at 3600-3650 cm-1, 1421 cm-1 and 875 cm-1 respectively by Fourier Transform Infrared spectroscopy to indicate the starting formation oxide metal upon calcinations.Keywords: ZnO varistor; Er doping; microstructure; I-V characteristics; low voltage varistor

It is necessary to investigate the electronic states of ceramic based ZnO vasristor and effect of doped impurities at different concentration. Band gap (Eg) of the ceramic (99-x) mol% ZnO+0.5 mol% Bi2O3+0.5 mol% TiO2+ xCo3O4 where x = 0, 0.2, 0.4, 0.6 and 0.8 mol%, were determined using UV-Vis spectrophotometer. The samples were prepared via solid-state route and sintered at the sintering temperature at 1110, 1140 and 1170 °C for 45 and 90 min in open air. At no doping of Co3O4, the values of Eg are 2.991 ± 0.001, 2.989 ± 0.001 eV for 45 and 90 min sintering time; respectively. Eg was decreased to 2.368 ± 0.002 and 2.352 ± 0.001 eV at 0.8 mol% Co3O4 for 45 and 90 min sintering time; respectively. XRD analysis indicates that two main phases existed at all concentrations which are ZnO and secondary phases, Bi12TiO20, Zn2Ti3O8, ZnCo2O4 and Co3Ti3O. Relative density decreases with the addition of Co3O4 compared to that of undoped at all doping level. When Co3O4 is added in the ceramics, relative density increases with the increase of doping level at both 45 and 90 min sintering time. The variation of sintering temperatures and XRD findings of steepness factor are correlated with the UV-Vis spectrophotometer results of based ZnO varistor doped with Co3O4 due to the growth of interface states.

Zinc oxide based varistor are widely used as circuit protective devices by literally absorbs these dangerous surge and spikes or grounding this unwanted magnitudes. In this research, zinc oxide is added with 20 mol% calcium manganite (CaMnO3) as an additive and Cobalt oxide (CoO) as doping material. Citrate-gel method is used as fabrication method compared to conventional solid-state method. This compound (ZnO-CaMnO3 -CoO) undergoes pre-sintering at 500 °C for 2 hours. In the sintering process, sintering temperature at 1300 °C, while the sintering time are setting at 1.5 hours. X-ray diffraction (XRD) patterns shows the components and phases of the compounds. The change of functional group was observed by Furrier transform infra-red (FTIR). I-V characteristic shows the value of nonlinear coefficient in the range of 1.0-2.0.

Zinc oxide based varistor are widely used as circuit protective devices by literally absorbs these dangerous surge and spikes or grounding this unwanted magnitudes. In this research, zinc oxide is added with 20 mol% calcium manganite (CaMnO3) as an additive and cobalt oxide (Co3O4) as doping material. Citrate-gel method is used as fabrication method compared to conventional solid-state method. This compound (ZnO-CaMnO3-Co3O4) undergoes pre-sintering at 500 °C for 2 hours. In the sintering process, sintering temperature at 1300 °C, while the sintering time are setting at 1.5 hours. X-ray diffraction (XRD) patterns show the components and phases of the compounds. The change of functional group was observed by Fourier Transform Infrared (FTIR). I-V characteristic shows the value of nonlinear coefficient in the range of 1.0-2.0.

The application of nature dyes was explored for solar cells due to several advantages for green technology. These can be supporting in renewable energy alternatives, which must include solar energy. This system was fabricated as hybrid solar cells, which consist of organic and non-organic materials. Metal oxide semiconductor (MOS), TiO2, was selected as charge separation and transport. Bixa orellana used as extracted natural dyes solution in order to enhance the absorption of photons. The dyes were extracted by using immerging in methanol solution and left until dyes being extracted. The dyes were coated on ITO glass by using Electrochemical Impedance Spectroscopy (EIS) varied by 1, 3, 5, 7 and 10 layers of scan. This work focuses on conductivity and charge carrier study of thin film. The result shows the conductivity was increase due to several parameters that are, thickness of thin films, and intensity of light, mixture of natural dyes and concentration of dyes solution. The conductivity was then supported with the energy band gap via UV-Vis Spectroscopy.