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Aliovalent substitution of Nb5+ by Ti4+ in Sr2LuNbO6 is limited to 10% of Nb atoms. A full structural determination by NPD confirms this and reveals that the structure is better described as a superstructure of the simple cubic perovskite (as previously reported) with the monoclinic cell 21/2ap × 21/2ap × ²ap and ß ≈ 90° (S.G. P21/n). The substituted materials present both oxygen-vacancies induced by charge compensation and Sr-deficiency. Therefore, their formula should be given as Sr2-yLuNb1-xTixO6-δ. Electrical properties can be fully understood considering these compositional defects. The parent compound Sr2LuNbO6 presents low electrical conductivity in air, which improves by more than one order of magnitude upon Ti substitution. In any case, the title oxides show low electrical conductivity in a wide oxygen partial pressure (pO2) range (10-25 atm = pO2 = 10-1 atm). At high pO2 the conductivity increases with pO2 due to oxygen-vacancy annihilation and hole creation, according to a general p-type semiconducting mechanism; A-site substoichiometry and Tisubstitution are the origin of this behaviour. In the low pO2 region, the conductivity increases as the oxygen partial pressure decreases. Reduction of cations, Nb5+ or Ti4+, supports n-type conduction by electrons and oxygen vacancy creation. For the intermediate pO2 range a low ionic conduction contribution is observed. Although the estimated ionic conductivity is not high in the substituted compounds, the strategy seems to be valid since a significant enhancement of ionic conduction is observed upon aliovalent substitution. [ABSTRACT FROM AUTHOR]

New derivatives of formula [M(dieneN4)](TCNQ)3, M = Ni or Cu and dieneN4 = cis- or trans-hexamethyltetraazacyclotetradecadiene, have been obtained. The TCNQ units show electronic delocalization and formation of 1D stacks, with no direct interactions with the metal cations. The stack is not uniform and can be seen as formed by trimeric dianions (TCNQ)3(2-). The electronic delocalization favors the conductivity in these materials, which behave as good semiconductors. The crystal structures of the trans derivatives have been solved: [Ni(transdieneN4)](TCNQ)3, triclinic, P-1, a = 8.809(2) A, b = 10.896(2) A, c = 13.727(2) A, alpha = 103.04(1) degrees, beta = 101.23(2) degrees, gamma = 109.37(2) degrees, Z = 1; [Cu(trans-dieneN4)](TCNQ)3: triclinic, P-1, a = 7.872(1) A, b = 9.840(1) A, c = 14.819(1) A, alpha = 92.32(1) degrees, beta = 95.05(1) degrees, gamma = 95.66(1) degrees, Z = 1.