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Light absorption enhancement in a 1.5 μm thick mercury–cadmium–telluride (Hg0.762Cd0.238Te, MCT) layer at room temperature utilizing 1D dielectric grating at mid-wave infrared (MWIR) wavelengths (3–5 μm) has been theoretically investigated. The optimized dielectric grating facilitates light diffraction and scattering into the MCT-absorbing waveguiding layer resulting in an increased lateral optical path. The light absorption was improved from ∼37.5% to ∼71% (TE) and ∼70% (TM) at normal incidence. With enhanced absorption, the photocarrier generation rate in the thin layer would be comparable to a bulk 5 μm thick MCT layer. A ∼3× reduction in the MCT layer thickness without compromising absorption has the potential for realizing infrared photodetectors with improved sensitivity at conventional operating temperatures and/or elevated operating temperatures. [ABSTRACT FROM AUTHOR]

A 2D piecewise linear continuous two-parameter map known as the Lozi map is a special case of the 2D border collision normal form depending on four parameters. In the present paper, we investigate how the bifurcation structure of the Lozi map is incorporated into the bifurcation structure of the 2D border collision normal form using an analytical representation of the boundaries of the largest periodicity regions related to the cycles with rotation number 1/n, n ⩾ 3. At the centre bifurcation boundary of the stability domain of the fixed point both maps are conservative which leads to a quite intricate bifurcation structure near this boundary. [ABSTRACT FROM AUTHOR]

The almost periodic streaming motion of accelerated electrons under moderate electric fields coupled with almost periodic emission of longitudinal optical (LO) phonons is studied in a gallium nitride quantum-well—a promising pathway for terahertz (THz) oscillations. The optimal conditions for the LO-phonon-terminated streaming depend, among others, on the density of the electron gas, the low-field electron mobility, the lattice temperature, and the electric field in a very specific way. The present manuscript exploited the electron noise temperature measured at an X band frequency as a marker for the oscillations at THz frequencies. The idea was tested on a deterministic model for a GaN two-dimensional electron gas (2DEG) through calculation of the electron noise temperature spectra in the Langevin approach for the frequency range from 1 GHz to 10 THz. The noise temperature at 10 GHz was found to be in a strong anticorrelation with the THz peaks in the noise temperature spectrum. In particular, a weaker dependence on the applied electric field at 10 GHz implies stronger THz oscillations. In an experiment, the microwave hot-electron noise measurements were carried out for AlGaN/AlN/GaN heterostructures with the 2DEG channel at 10 GHz under pulsed electric field conditions in order to mitigate the effect of Joule heating of the channel. The plateau-like behavior of the noise temperature, in its dependence on the electric field, was obtained for the 2DEG channels with rather low electron densities (2.5 × 10 12 cm − 2 ) in a good agreement with the model. The aforementioned plateau in the electron noise temperature observed at 10 GHz can be used as an indicator for the THz oscillations. [ABSTRACT FROM AUTHOR]

The hot-electron effect on electron transport in nominally undoped ZnO epilayers is studied at electric fields up to 430 ± 50 kV/cm applied with 3 ns voltage pulses. The transient measurements do not demonstrate any change in the electron density at the fields up to 320 kV/cm. The deviation from Ohm's law can be approximated by the linear dependence of the current on the electric field valid at the moderate fields (from 50 to 250 kV/cm). The model calculations based on the Boltzmann kinetic equation are used to demonstrate that the differential mobility at the moderate fields is almost independent of the scattering on the charged point defects. The electron drift velocity is estimated from the experimental values on the differential conductivity and the current density together with the calculated differential mobility as a reference for calibration. The drift velocity reaches 2.7 ± 0.3 × 10 7 cm/s at the field of ∼ 320 kV/cm and approaches the theoretical limit predicted by the known Monte Carlo simulations. [ABSTRACT FROM AUTHOR]

High-field electron transport in two-dimensional channels at ZnO/MgZnO heterointerfaces has been investigated experimentally. Pulsed current–voltage (I–V) and microwave noise measurements used voltage pulse widths down to 30 ns and electric fields up to 100 kV/cm. The samples investigated featured electron densities in the range of 4.2–6.5 × 1012 cm−2, and room temperature mobilities of 142–185 cm2/V s. The pulsed nature of the applied field ensured negligible, if any, change in the electron density, thereby allowing velocity extraction from current with confidence. The highest extracted electron drift velocity of ∼0.5 × 107 cm/s is somewhat smaller than that estimated for bulk ZnO; this difference is explained in the framework of longitudinal optical phonon accumulation (hot-phonon effect). The microwave noise data allowed us to rule out the effect of excess acoustic phonon temperature caused by Joule heating. Real-space transfer of hot electrons into the wider bandgap MgZnO layer was observed to be a limiting factor in samples with a high Mg content (48%), due to phase segregation and the associated local lowering of the potential barrier. [ABSTRACT FROM AUTHOR]

We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ∼0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques. [ABSTRACT FROM AUTHOR]

We studied the effect of the substrate temperature, in the range from 450 °C to 500 °C, on the required Zn to (Be+Mg) flux ratio for plasma-assisted molecular beam epitaxy growth of O-polar BexMgyZn1-x-yO on (0001)-GaN/sapphire templates. Achievement of single-crystalline BexMgy Zn1-x-yO with improved optical and structural qualities required relatively high substrate temperatures, which necessitated the Zn to (Be+Mg) flux ratio to be increased from 3.9 at 450 °C to 8.3 at 500 °C. This resulted in a reduction of Mg incorporation from 25% to 15% for a fixed Be content of ~3%. With increasing Zn to (Be + Mg) ratio, 15K photoluminescence energy for the dominant emission remained unchanged at around 3.75 eV and 3.55 eV for the samples grown at 475 °C and 500 °C, respectively. These findings readily suggest a kinetic limitation of Mg and Be incorporation into wurtzite BexMgyZn1-x-yO lattice, resulting in the formation of second phase due mainly to the enhanced surface mobility of Mg adatoms and, therefore, an increase in the probability of the formation of Mg-rich clusters. An increase in the in-plane lattice parameter, deduced from the Reflection High Energy Electron Diffraction, at the onset of the phase segregation suggests the formation of the wurtzite phase MgO rich alloy(s). [ABSTRACT FROM AUTHOR]

The effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular-beam epitaxy (MBE) are investigated. The results suggest that the lattice parameter of Ga0.96Mn0.04As increased with decreasing V/III ratio and increasing growth temperature.