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The counter-electrode (CE) material in electrochemical metallization memory (ECM) cells plays a crucial role in the switching process by affecting the reactions at the CE/electrolyte interface. This is due to the different electrocatalytic activity of the CE material towards reduction-oxidation reactions, which determines the metal ion concentration in the electrolyte and ultimately impacts the switching kinetics. In this study, the focus is laid on Pt, TiN, and W, which are relevant in standard chip technology. For these, the influence of CE metal on the switching kinetics of Ag/HfO 2 -based volatile ECM cells is investigated. Rectangular voltage pulses of different amplitudes were applied, and the SET times were analyzed from the transient curves. The results show that CE material has a significant effect on the SET kinetics, with differences being observed depending on the voltage regime. The formation of interfacial oxides at the CE/electrolyte interface, particularly for non-noble metals, is also discussed in relation to the findings. Overall, this work highlights the important role of the CE material in the switching process of Ag/HfO 2 -based diffusive memristors and the importance of considering interfacial oxide formation in the design of these devices.

Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.2 nm, framed by delaminated graphene as identified by the typical Dirac cone of free graphene. In contrast, adsorption of CVD SLG on the hydroxyl-terminated α-Al 2 O 3  (0001) terraces results in a superstructure with a periodicity of (2.66 ± 0.03) nm. Weak hydrogen bonds formed between the hydroxylated sapphire surface and the π-electron system of SLG result in a clean interface. The charge injection induces a band gap in the adsorbed graphene layer of about (73 ± 3) meV at the Dirac point. The good agreement with the predictions of a theoretical analysis underlines the potential of this hybrid system for emerging electronic applications., (© 2022. The Author(s).)

Functional thin films are commonly integrated in electronic devices as part of a multi-layer architecture. Metal/oxide/metal structures e.g. in resistive switching memory and piezoelectric microelectrochemical devices are relevant applications. The films are mostly fabricated from the vapour phase or by solution deposition. Processing conditions with a limited thermal budget typically yield nanocrystalline or amorphous layers. For these aperiodic materials, the structure is described in terms of the local atomic order on the length scale of a few chemical bonds up to several nanometres. Previous structural studies of the short-range order in thin films have addressed the simple case of single coatings on amorphous substrates. By contrast, this work demonstrates how to probe the local structure of two stacked functional layers by means of grazing incidence total X-ray scattering and pair distribution function (PDF) analysis. The key to separating the contributions of the individual thin films is the variation of the incidence angle below the critical angle of total external reflection, In this way, structural information was obtained for functional oxides on textured electrodes, i.e. PbZr 0.53 O 0.47 O 3 on Pt[111] and HfO 2 on TiN, as well as HfO 2 -TiO x bilayers. For these systems, the transformations from disordered phases into periodic structures via thermal teatment are described. These examples highlight the opportunity to develop a detailed understanding of structural evolution during the fabrication of real thin film devices using the PDF technique.