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221 results on '"Aufinger, Klaus"'

2. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS

Author

Starke, David, Vogelsang, Florian, Bott, Jonathan, Schopfel, Jan, Bredendiek, Christian, Aufinger, Klaus, and Pohl, Nils

Abstract

Commercial frequency-modulated continuous-wave (FMCW) radar systems are well-established in the frequency range up to 100 GHz, with some exceptions operating in the D-band and above. There are multiple advantages of operating at higher frequencies, such as the use of ON-chip antennas and, therefore, the omission of high-frequency substrates for frontend designs, which enables the fabrication of low-cost FR4 radar frontends. This work features a 360 GHz fully integrated signal source and breakout circuits at 90 and 180 GHz, manufactured in the 90 nm B12HFC SiGe:C BiCMOS technology. We present a 90-GHz wideband Colpitts–Clapp VCO combined with a static frequency divider for stabilization purposes, achieving a tuning range (TR) of 24.1 GHz and an output power of up to 6.43 dBm. Adding a frequency-doubling and amplification stage expands this circuit, achieving 51.7-GHz TR and up to 3.8-dBm output power. The 360 GHz signal source adds another frequency-doubling stage consisting of a wideband differential hybrid coupler for quadrature signal generation, amplifier chains, and two push–push frequency doublers, generating a pseudodifferential output signal with up to −1.8 dBm output power and a frequency TR of 106.7 GHz (29.9%).

Published
2024
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14. A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band

Author

Maiwald, Tim, primary, Li, Teng, additional, Hotopan, George-Roberto, additional, Kolb, Katharina, additional, Disch, Karina, additional, Potschka, Julian, additional, Haag, Alexander, additional, Dietz, Marco, additional, Debaillie, Bjorn, additional, Zwick, Thomas, additional, Aufinger, Klaus, additional, Ferling, Dieter, additional, Weigel, Robert, additional, and Visweswaran, Akshay, additional

Published
2023
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15. A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS

Author

Mangiavillano, Christoph, Kaineder, Alexander, Aufinger, Klaus, and Stelzer, Andreas

Abstract

A combined common collector harmonic mixer and frequency multiplier is designed to operate at the fourth harmonic in a transceiver at around 0.88 THz in a 90-nm SiGe bipolar CMOS technology with an $f_{T}$/$f_{\max}$ of 300/480 GHz. The transceiver occupies a chip area of 1.35 $\text{mm}^\text{2}$ with a current consumption of 144 mA when connected to a 3.3-V supply. Measurements reveal an effective isotropic radiated power of $-$30 dBm at 0.888 THz and a system receiver conversion gain of $-$4 dB as well as a single-sideband noise figure of 57 dB at 0.912 THz.

Published
2024
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24. A 117.5–155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based Tripler

Author

Romstadt, Justin, Zaben, Ahmad, Papurcu, Hakan, Stadler, Pascal, Welling, Tobias, Aufinger, Klaus, and Pohl, Nils

Abstract

In this work, we present a fully integrated $D$ -band $\times 12$ SiGe-based frequency multiplier chain. It comprises two frequency doubling and one frequency tripling stage. Each stage uses an architecture that ensures high harmonic rejection at its output and, thus, ultimately, at $D$ -band frequencies. The focus of this work is on describing the generation and propagation of harmonic components in the multiplier chain. Measurements show a maximum output power of 3.5 dBm and a 3-dB bandwidth of 37.5 GHz covering the range from 117.5 to 155 GHz. Over the entire $D$ -band, the output power varies by 9 dB. The power consumption equals 0.64 W. The harmonic rejection at the center frequency is approximately 24.5 dBc and within the 3-dB bandwidth, always above 19.5 dBc.

Published
2023
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27. IEEE Transactions on Terahertz Science and Technology / A 1.42-mm² 0.45–0.49 THz monostatic FMCW radar transceiver in 90-nm SiGe BiCMOS

Author

Mangiavillano, Christoph, Kaineder, Alexander, Aufinger, Klaus, and Stelzer, Andreas

Subjects
on-chip antenna, multiplier, terahertz (THz), Frequency-modulated continuous-wave (FMCW), radar, mixer, SiGe bipolar CMOS (BiCMOS)
Abstract

Terahertz frequency-modulated continuous-wave (FMCW) radars operating close to and beyond f_max often use gain-enhancing lenses to improve the signal-to-noise ratio. A compact single-chip transceiver benefits a lot from the alignment of the lens to the single on-chip antenna in a monostatic system. The typically required coupler for monostatic operation adds an insertion loss. The proposed multiply-by-24 frequency multiplier-based FMCW radar transceiver removes the coupler and integrates both the final 0.48-THz doubler and subharmonic downconverter into a single common collector push–push doubler. The common emitter is the only port at 0.48 THz in this monostatic system, feeding the top-metal on-chip patch antenna using a direct via stack. The 1.42-mm 2 monostatic FMCW radar transceiver, manufactured in a 90-nm SiGe bipolar CMOS (BiCMOS) technology with an f_T / f_max of 300/480 GHz consumes 85 mA when connected to a 3.3-V supply. At 0.48 THz, the output power is − 12 dBm and the single-sideband noise figure is measured as 36.3 dB. FMCW radar measurements with operating bandwidths of up to 55 GHz, corresponding to a theoretical range resolution of 2.73 mm are performed using an on-board frequency source of a credit card sized demonstrator. Europaische Kommission 10.1109/TTHZ.2022.3208069 Version of record

Published
2022

30. A 1.42-mm2 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS

Author

Mangiavillano, Christoph, Kaineder, Alexander, Aufinger, Klaus, and Stelzer, Andreas

Abstract

Terahertz frequency-modulated continuous-wave (FMCW) radars operating close to and beyond $f_{\max}$ often use gain-enhancing lenses to improve the signal-to-noise ratio. A compact single-chip transceiver benefits a lot from the alignment of the lens to the single on-chip antenna in a monostatic system. The typically required coupler for monostatic operation adds an insertion loss. The proposed multiply-by-24 frequency multiplier-based FMCW radar transceiver removes the coupler and integrates both the final 0.48-THz doubler and subharmonic downconverter into a single common collector push–push doubler. The common emitter is the only port at 0.48 THz in this monostatic system, feeding the top-metal on-chip patch antenna using a direct via stack. The 1.42-mm2 monostatic FMCW radar transceiver, manufactured in a 90-nm SiGe bipolar CMOS (BiCMOS) technology with an $f_\text{T}$/$f_{\max}$ of 300/480 GHz consumes 85 mA when connected to a 3.3-V supply. At 0.48 THz, the output power is $-$12 dBm and the single-sideband noise figure is measured as 36.3 dB. FMCW radar measurements with operating bandwidths of up to 55 GHz, corresponding to a theoretical range resolution of 2.73 mm are performed using an on-board frequency source of a credit card sized demonstrator.

Published
2022
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32. (Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS

Author

Manger, Dirk, primary, Boeck, Josef, additional, Aufinger, Klaus, additional, Boguth, Sabine, additional, Gruenberger, Robert, additional, Popp, Thomas, additional, Binder, Boris, additional, Hengst, Claudia, additional, Majied, Soran, additional, Markert, Matthias, additional, Pribil, Andreas, additional, Rothenhaeusser, Steffen, additional, Tschumakow, Dmitri Alex, additional, Dahl, Claus, additional, and Bever, Thomas, additional

Published
2020
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33. High-performance implanted base silicon bipolar technology for RF applications

Author

Bock, Josef, Knapp, Herbert, Aufinger, Klaus, Meister, Thomas F., Wurzer, Martin, Boguth, Sabine, and Treitinger, Ludwig

Subjects
Bipolar transistors -- Research, Radio -- Research, Microwave circuits -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A production-near silicon bipolar technology for mixed digital/analog applications is described. It is shown that implanted base silicon bipolar technology is suitable for high-frequency applications such as mobile communications.

Published
2001

36. An integrated 132-147GHz power source with +27dBm EIRP

Author

Visweswaran, Akshay, primary, Haag, Alexander, additional, de Martino, Carmine, additional, Schneider, Karina, additional, Maiwald, Tim, additional, Vignon, Bastien, additional, Aufinger, Klaus, additional, Spirito, Marco, additional, Zwick, Thomas, additional, and Wambacq, Piet, additional

Published
2020
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41. HIGH-PERFORMANCE Si AND SiGe BIPOLAR TECHNOLOGIES AND CIRCUITS

Author

WURZER, MARTIN, primary, MEISTER, THOMAS F., additional, BÖCK, JOSEF, additional, SCHÄFER, HERBERT, additional, AUFINGER, KLAUS, additional, BOGUTH, SABINE, additional, KNAPP, HERBERT, additional, REST, MIRJANA, additional, SCHREITER, RENATE, additional, and TREITINGER, LUDWIG, additional

Published
2001
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42. Noise characteristics of transistors fabricated in an advanced silicon bipolar technology

Author

Aufinger, Klaus, Bock, Josef, Meister, Thomas F., and Popp, Josef

Subjects
Bipolar transistors -- Research, Electromagnetic noise -- Control, Business, Electronics, Electronics and electrical industries
Abstract

An advanced silicon bipolar technology reduces the RF noise of transistors. Experiments study the influence of the lateral scaling of the emitter width on the noise characteristics. The results of the study agree with the predictions of noise modeling techniques. Noise figures lower than one dB for frequencies up to two gigaHz, and below two dB up to seven gigaHz confirm the potential of the technology for low-noise applications.

Published
1996

48. Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data.

Author

Saha, Bishwadeep, Fregonese, Sebastien, Heinemann, Bernd, Scheer, Patrick, Chevalier, Pascal, Aufinger, Klaus, Chakravorty, Anjan, and Zimmer, Thomas

Subjects
TRANSISTORS, METAL oxide semiconductor field-effect transistors, MEASUREMENT errors, FREQUENCIES of oscillating systems, HETEROJUNCTION bipolar transistors, ELECTRIC admittance measurement
Abstract

Maximum oscillation frequency (${f}_{\textit {MAX}}$) of mm-wave transistors is one of the key figures of merit (FOMs) for evaluating the HF-performance of a given technology. However, accurate measurements of ${f}_{\textit {MAX}}$ are very difficult. Determination of ${f}_{\textit {MAX}}$ is significantly affected by the measurement uncertainties in the admittance (${y}$) parameters. In order to get rid of the random measurement error and to obtain a reliable and stable ${f}_{\textit {MAX}}$ value, the frequency dependent ${y}$ -parameters are described by rational functions formulated from the small-signal hybrid ${\pi }$ -model of the transistor under investigation. The parameters of these functions are determined following a least square error technique that minimizes the functional error with the measured data. The approach is especially useful for a fast and reliable evaluation of ${f}_{\textit {MAX}}$ value. Devices from two different SiGe and an FDSOI (Fully Depleted Silicon On Insulator) MOS technology are measured and stable ${f}_{\textit {MAX}}$ values are estimated following this approach. [ABSTRACT FROM AUTHOR]

Published
2021
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