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1. Mid-infrared group-IV nanowire laser

2. Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors

3. Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon

4. Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

5. Continuous-wave GeSn light emitting diodes on silicon with $2.5 \, \mu$m room-temperature emission

6. Extended-SWIR GeSn LEDs with reduced footprint and power consumption

7. Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid-Infrared Emitters

8. Polarization-Tuned Fano Resonances in All-Dielectric Short-Wave Infrared Metasurface

9. 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

10. Dark current in monolithic extended-SWIR GeSn PIN photodetectors

11. Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

12. A Light-Hole Quantum Well on Silicon

13. Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable Ge$_{0.89}$Sn0$_{.11}$

14. Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

15. 1D photonic crystal direct bandgap GeSn-on-insulator laser

17. Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects

18. Enhanced GeSn Microdisk Lasers Directly Released on Si

19. Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics

20. Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface

21. Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

22. All-Group IV membrane room-temperature mid-infrared photodetector

23. Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors

24. Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn

25. Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

26. Strain engineering in Ge/GeSn core/shell nanowires

27. Vacancy complexes in nonequilibrium germanium-tin semiconductors

28. Decoupling the effects of composition and strain on the vibrational modes of GeSn

34. Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors.

36. Transfer-Printed Multiple GeSn Membrane Mid-Infrared Photodetectors

39. Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnxAlloys Grown on 20 nm Ge Nanowires

44. Evolution of Gesn Lasers Towards Photonic Integration into Practical Applications

45. Gesn Bonding Technology for Integrated Laser-on-Chip Photonics

46. (Digital Presentation) Gesnoi Laser Technology for Photonic-Integrated Circuits

48. Strong extended SWIR cavity resonances in a single GeSn nanowire

49. GeSn Laser Technologies for Integrated Photonics

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