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MoS2 is a two-dimensional layered transition metal dichalcogenide with unique electronic and optical properties. The fabrication of ultrathin MoS2 is vitally important, since interlayer interactions in its ultrathin varieties will become thickness-dependent, providing thickness-governed tunability and diverse applications of those properties. Unlike with a number of studies that have reported detailed information on direct bandgap emission from MoS2 monolayers, reliable experimental evidence for thickness-induced evolution or transformation of the indirect bandgap remains scarce. Here, the sulfurization of MoO3 thin films with nominal thicknesses of 30 nm, 5 nm and 3 nm was performed. All sulfurized samples were examined at room temperature with spectroscopic ellipsometry and photoluminescence spectroscopy to obtain information about their dielectric function and edge emission spectra. This investigation unveiled an indirect-to-indirect crossover between the transitions, associated with two different Λ and K valleys of the MoS2 conduction band, by thinning its thickness down to a few layers. [ABSTRACT FROM AUTHOR]

ZnGa2S4 luminescent compound is prepared by solid‐state reaction, which is confirmed by X‐ray diffraction to have a tetragonal structure. The photoluminescence (PL) emission and excitation spectra, infrared (IR) reflectivity and Raman scattering of the defective ZnGa2S4 compound are studied experimentally. High stability of the shape and peak positions of the PL spectra is observed in a wide range temperature range (100–290 K). It was determined that PL intensity increases with decreasing temperature. Higher correlated color temperature (CCT) value >6000 K implies the suitability of using this material for light emitting diodes. Five modes of optical phonons are found in both IR reflectance and Raman spectra of ZnGa2S4 and identified from point group symmetry analysis. The calculations of the dynamic properties are carried out within the framework of the density functional theory (DFT) with full optimization of the lattice parameters. Results of calculations show that, the phonon‐dispersion curve is sensitive to S–Se replacement in ZnGa2S4 and gives rise to clearly pronounced energy gaps in the phonon spectrum. [ABSTRACT FROM AUTHOR]

ZnGa2S4 luminescent compound is prepared by solid‐state reaction, which is confirmed by X‐ray diffraction to have a tetragonal structure. The photoluminescence (PL) emission and excitation spectra, infrared (IR) reflectivity and Raman scattering of the defective ZnGa2S4 compound are studied experimentally. High stability of the shape and peak positions of the PL spectra is observed in a wide range temperature range (100–290 K). It was determined that PL intensity increases with decreasing temperature. Higher correlated color temperature (CCT) value >6000 K implies the suitability of using this material for light emitting diodes. Five modes of optical phonons are found in both IR reflectance and Raman spectra of ZnGa2S4 and identified from point group symmetry analysis. The calculations of the dynamic properties are carried out within the framework of the density functional theory (DFT) with full optimization of the lattice parameters. Results of calculations show that, the phonon‐dispersion curve is sensitive to S–Se replacement in ZnGa2S4 and gives rise to clearly pronounced energy gaps in the phonon spectrum. [ABSTRACT FROM AUTHOR]

MoS 2 is a two-dimensional layered transition metal dichalcogenide with unique electronic and optical properties. The fabrication of ultrathin MoS 2 is vitally important, since interlayer interactions in its ultrathin varieties will become thickness-dependent, providing thickness-governed tunability and diverse applications of those properties. Unlike with a number of studies that have reported detailed information on direct bandgap emission from MoS 2 monolayers, reliable experimental evidence for thickness-induced evolution or transformation of the indirect bandgap remains scarce. Here, the sulfurization of MoO 3 thin films with nominal thicknesses of 30 nm, 5 nm and 3 nm was performed. All sulfurized samples were examined at room temperature with spectroscopic ellipsometry and photoluminescence spectroscopy to obtain information about their dielectric function and edge emission spectra. This investigation unveiled an indirect-to-indirect crossover between the transitions, associated with two different Λ and K valleys of the MoS 2 conduction band, by thinning its thickness down to a few layers.