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In-K-edge x-ray absorption fine structure (EXAFS), x-ray photoelectron, and Raman spectroscopy results are combined for a comprehensive study of InxGa1−xN layers with energy gaps extending over nearly the whole visible spectrum. The In–N and In–(In,Ga) distances determined by EXAFS are used for the derivation of the In–N bond ionicity as well as for the phonon frequency dependence of the LO and B 1 2 modes, assessed by Raman, and the N 1s, In 3d5/2, Ga 3s, and Ga 2p1/2 electron binding energies on those distances. Phonon confinement due to perturbation of the periodic potential caused by the alloying is also quantified. [ABSTRACT FROM AUTHOR]

The growth of GaN nanocrystals in an amorphous SiO2 matrix by sequential Ga and N implantation and rapid thermal annealing is reported. The effect of the implantation and annealing conditions on the distribution of the implanted ions, as well as the size, static disorder, and stability of the grown GaN nanocrystals, is studied by means of transmission electron microscopy, Rutherford backscattering spectrometry, Raman scattering, and extended X-ray absorption fine structure spectroscopies. It is found that the optimum temperature range for the post-implantation annealing of the nanocrystals, with a size that ranges from about 3 to 12 nm, is 1000–1100 °C. Higher temperatures result in the dissociation of the nanocrystals and out-diffusion of N and Ga, whereas lower temperatures are insufficient for the growth of GaN nanocrystals. Annealing for 30–90 s is optimum in order to avoid considerable loss of N and Ga. However, upon annealing at higher temperatures within the optimum range, up to 1100 °C, or for longer times, up to 120 s, larger GaN nanocrystals are grown and/or lower static disorder is observed. [ABSTRACT FROM AUTHOR]

Author(s): J. Arvanitidis [1]; Konstantinos Papagelis (corresponding author) [1]; Serena Margadonna (corresponding author) [2]; Kosmas Prassides [1]; Andrew N. Fitch [3] The different degrees of freedom of a given system [...]

Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane (11120) and semipolar s-plane (10111) InN epilayers. The intensity dependence of the Raman peaks assigned to the vibrational modes A1(TO), E1(TO), and Eh 2 on the angle w that corresponds to rotation around the growth axis, is very well reproduced by using expressions taking into account the corresponding Raman tensors and the experimental geometry, providing thus a reliable technique towards assessing the sample quality. The s- and a-plane InN epilayers grown on nitridated r-plane sapphire (Al2O3) exhibit good crystalline quality as deduced from the excellent fitting of the experimental angle-dependent peak intensities to the theoretical expressions as well as from the small width of the Raman peaks. On the contrary, in the case of the s-plane epilayer grown on non-nitridated r-plane sapphire, fitting of the angular dependence is much worse and can be modeled only by considering the presence of two structural modifications, rotated so as their c-axes are almost perpendicular to each other. Although the presence of the second variant is verified by transmission electron and atomic force microscopies, angular dependent Raman spectroscopy offers a nondestructive and quick way for its quantification. Rapid thermal annealing of this sample did not affect the angular dependence of the peak intensities. The shift of the E1(TO) and Eh 2 Raman peaks was used for the estimation of the strain state of the samples. [ABSTRACT FROM AUTHOR]

Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the "M"-shape dependence of the (11̄20) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I1 intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate. [ABSTRACT FROM AUTHOR]