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Funding Information: We want to thank all cooperation associates in the framework of this manuscript. Further, we especially thank the Institut Laue-Langevin for the synthesis of the TMPT materials and Gabriele Es-Samlaoui for the preparation of TEM samples used in this work. This work was supported by the German Science Foundation (DFG), project CRC 1279 (project number 316249678), projects KR 4866/8-1, and the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. This work was supported by a project funded by the Carl Zeiss foundation. The computational support from the Technical University of Dresden computing cluster (TAURUS) and High-Performance Computing Center (HLRS) in Stuttgart is gratefully appreciated. M.K.K. acknowledges funding from the Deutsche Forschungsgemeinschaft (DFG) within the project DFG: KI 2546/1-1. Publisher Copyright: © 2023 The Authors. Published by American Chemical Society. Quasi-two-dimensional (2D) manganese phosphorus trisulfide, MnPS3, which exhibits antiferromagnetic ordering, is a particularly interesting material in the context of magnetism in a system with reduced dimensionality and its potential technological applications. Here, we present an experimental and theoretical study on modifying the properties of freestanding MnPS3 by local structural transformations via electron irradiation in a transmission electron microscope and by thermal annealing under vacuum. In both cases we find that MnS1-xPx phases (0 ≤ x < 1) form in a crystal structure different from that of the host material, namely that of the α- or γ-MnS type. These phase transformations can both be locally controlled by the size of the electron beam as well as by the total applied electron dose and simultaneously imaged at the atomic scale. For the MnS structures generated in this process, our ab initio calculations indicate that their electronic and magnetic properties strongly depend on both in-plane crystallite orientation and thickness. Moreover, the electronic properties of the MnS phases can be further tuned by alloying with phosphorus.

The characteristics of two-dimensional (2D) materials can be tuned by low-energy ion irradiation provided that the ion energy is correctly chosen. The optimum ion energy is related to

Funding Information: This work has been partially supported by the MIUR (PRIN 2017: Multi-e, 20179337R7) and the Cariparo Foundation (project Synergy, Progetti di Eccellenza 2018). M.B. acknowledges support from the U.S. National Science Foundation under award 2140038. The National Science Centre, Poland, is acknowledged for funding (grant no. 2021/43/D/ST3/02873). The University of Padova is acknowledged for support through the grant P-Disc 2022 (MUSYCA). The “Excellence Initiative – Research University” program is acknowledged for support. Publisher Copyright: © 2023 The Authors. Published by American Chemical Society. Unraveling structure-activity relationships is a key objective of catalysis. Unfortunately, the intrinsic complexity and structural heterogeneity of materials stand in the way of this goal, mainly because the activity measurements are area-averaged and therefore contain information coming from different surface sites. This limitation can be surpassed by the analysis of the noise in the current of electrochemical scanning tunneling microscopy (EC-STM). Herein, we apply this strategy to investigate the catalytic activity toward the hydrogen evolution reaction of monolayer films of MoSe2. Thanks to atomically resolved potentiodynamic experiments, we can evaluate individually the catalytic activity of the MoSe2 basal plane, selenium vacancies, and different point defects produced by the intersections of metallic twin boundaries. The activity trend deduced by EC-STM is independently confirmed by density functional theory calculations, which also indicate that, on the metallic twin boundary crossings, the hydrogen adsorption energy is almost thermoneutral. The micro- and macroscopic measurements are combined to extract the turnover frequency of different sites, obtaining for the most active ones a value of 30 s-1 at −136 mV vs RHE.

The electrochemical N2 reduction reaction (NRR) under ambient conditions is attractive in replacing the current Haber-Bosch process toward sustainable ammonia production. Metal-heteroatom-doped carbon-rich materials have emerged as the most promising NRR electrocatalysts. However, simultaneously boosting their NRR activity and selectivity remains a grand challenge, while the principle for precisely tailoring the active sites has been elusive. Herein, we report the first case of crystalline two-dimensional conjugated covalent organic frameworks (2D c-COFs) incorporated with M–N4–C centers as novel, defined, and effective catalysts, achieving simultaneously enhanced activity and selectivity of electrocatalytic NRR to ammonia. Such 2D c-COFs are synthesized based on metal-phthalocyanine (M = Fe, Co, Ni, Mn, Zn, and Cu) and pyrene units bonded by pyrazine linkages. Significantly, the 2D c-COFs with Fe–N4–C center exhibit higher ammonia yield rate (33.6 μg h–1 mgcat–1) and Faradaic efficiency (FE, 31.9%) at −0.1 V vs reversible hydrogen electrode than those with other M–N4–C centers, making them among the best NRR electrocatalysts (yield rate >30 μg h–1 mgcat–1 and FE > 30%). In situ X-ray absorption spectroscopy, Raman spectroelectrochemistry, and theoretical calculations unveil that Fe–N4–C centers act as catalytic sites. They show a unique electronic structure with localized electronic states at Fermi level, allowing for stronger interaction with N2 and thus faster N2 activation and NRR kinetics than other M–N4–C centers. Our work opens the possibility of developing metal–nitrogen-doped carbon-rich 2D c-COFs as superior NRR electrocatalyst and provides an atomic understanding of the NRR process on M–Nx–C based electrocatalysts for designing high-performance NRR catalysts.

Funding Information: Financial support through NSF Grant No. 2140038 is acknowledged. In addition, we acknowledge funding from the German Research Foundation (DFG), Project KR 4866/6-1, and through the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. We further thank the Gauss Centre for Super-computing e.V. ( www.gauss-centre.eu ) for providing computing time on the GCS Supercomputer HAWK at Höchstleistungsrechenzentrum Stuttgart ( www.hlrs.de ) and also TU Dresden (Taurus cluster) for generous grants of CPU time. Publisher Copyright: © Monolayer PtTe2 is a narrow gap semiconductor while Pt2Te2 is a metal. Here we show that the former can be transformed into the latter by reaction with vapor-deposited Pt atoms. The transformation occurs by nucleating the Pt2Te2 phase within PtTe2 islands, so that a metal-semiconductor junction is formed. A flat band structure is found with the Fermi level of the metal aligning with that of the intrinsically p-doped PtTe2. This is achieved by an interface dipole that accommodates the â¼0.2 eV shift in the work functions of the two materials. First-principles calculations indicate that the origin of the interface dipole is the atomic scale charge redistributions at the heterojunction. The demonstrated compositional phase transformation of a 2D semiconductor into a 2D metal is a promising approach for making in-plane metal contacts that are required for efficient charge injection and is of particular interest for semiconductors with large spin-orbit coupling, like PtTe2.

Monolayer PtTe

Funding Information: We want to thank all cooperation associates in the framework of this manuscript. Further, we especially thank the Institute Laue-Langevin, for the syntheses of the TMPT materials used in this work. We thank Gabriele Es-Samlaoui for successfully preparing the samples for TEM investigation. Further, we thank Hannu Pekka-Komsa for the fruitful discussions on Debye temperatures in TMPTs. This work is supported by a project funded by Carl Zeiss foundation. The computational support from the Technical University of Dresden computing cluster (TAURUS) and High-Performance Computing Center (HLRS) in Stuttgart is gratefully appreciated. We further thank the German Research Foundation (DFG) through projects KR 4866/8-1, the collaborative research center “Chemistry of Synthetic 2D Materials” CRC-1415-417590517, and the collaborative research center “Exploiting the Human Peptidome for Novel Antimicrobial and Anticancer Agents” CRC-1279-316249678 for financial support. Publisher Copyright: © 2022 The Authors. Published by American Chemical Society. Transition metal phosphorous trisulfides (TMPTs) are inorganic materials with inherent magnetic properties. Due to their layered structure, they can be exfoliated into ultra-thin sheets, which show properties different from their bulk counterparts. Herein, we present a detailed analysis of the interaction of the electron beam (30-80 kV) in a transmission electron microscope with freestanding few-layer TMPTs, with the aim of tailoring their properties. The irradiation-induced structure modifications were systematically investigated by various transmission electron microscopy methods on FePS3, MnPS3, and NiPS3, and the results are rationalized with the help of ab initio calculations, which predict that the knock-on threshold for removing sulfur is significantly lower than that for phosphorus. Therefore, a targeted removal of sulfur is feasible. Eventually, our experiments confirm the dose-dependent, predominant removal of sulfur by the impinging electrons, thus showing the possibility of tuning the sulfur concentration. Using ab initio calculations, we analyze the electronic structure of the TMPTs with single vacancies and oxygen impurities and predict distinct electronic properties depending on the type of defect. Therefore, our study shows the possibility of tuning the properties of ultra-thin freestanding TMPTs by controlling their stoichiometry.

Funding Information: We thank Dr. M. Ghorbani-Asl for fruitful discussion. A.V.K. acknowledges the German Research Foundation (DFG) for the support through project KR 4866/6-1 and the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. J.H.S. acknowledges financial support from the EU graphene flagship core 3 program. I.V.C. thanks the German Academic Exchange Service (DAAD) program “Mikhail Lomonosov” for support. The authors thank the HZDR Computing Center, HLRS, Stuttgart, Germany, and TU Dresden Cluster “Taurus” for generous grants of CPU time. Publisher Copyright: © 2022 American Chemical Society. Stacking various 2D materials in van der Waals heterostructures is a novel approach to design new systems, which can host alkali metal (AM) atoms to tune their electronic properties or store energy. Using state-of-the-art first-principles calculations, we systematically study the intercalation of the most widespread AMs (Li, Na, and K) into a graphene/MoS2 heterostructure. Contrary to the previous work on the intercalation of AMs into various heterostructures based on 2D materials, we consider not only single-, but also multi-layer configurations of AM atoms. We assess the intercalation energetics for various concentrations of AM atoms, calculate charge transfer from AM atoms to the host system, and show that although intercalation of AMs as a single layer is energetically preferable, multi-layer configurations can exist at high concentrations of AM atoms. We further demonstrate that the transition of the MoS2 layer from the H to T′ phase is possible upon Li intercalation, but not for Na or K. Our findings should help to better understand the behavior of heterostructures upon AM atom intercalation and may stimulate further experiments aimed at the tailoring of heterostructure properties and increasing the capacity of anode materials in AM ion batteries.

Quasi-2D crystals inside bilayer graphene have been observed in in-situ TEM experiments [Nature 564 (2018) 234]. It was also revealed that Li crystals have the FCC structure, nucleate at point defects in graphene and contain impurity atoms. Using first-principles calculations, we systematically study the interaction of isolated Li atoms and those assembled in FCC crystals with vacancy-type defects in graphene and show that quasi-2D Li crystals encapsulated between graphene sheets must indeed nucleate at the defects and that the interaction of not only isolated Li atoms but also Li crystals with the defects in graphene is strong. We further demonstrate that a moiré pattern develops at the graphene/Li interface. Finally, we investigate the behavior of impurities most likely to be found in the encapsulated Li crystals, such as O, N, S, and F and show that all impurity atoms take octahedral interstitial positions and strongly interact with atoms in Li crystals, thus impeding the de-lithiation process. Our theoretical work focused on the fundamental aspects of the behavior of Li inside bilayer graphene should help rationalize the results of in-situ TEM experiments and shed light on the role of impurities in the degradation of anode materials during Li-ion battery operation.

Funding Information: The Jena group received financial support of the Deutsche Forschungsgemeinschaft (DFG) through a research infrastructure grant INST 275/257‐1 FUGG (313713174), CRC 1375 NOA (Project B2, 398816777) and SPP2244 (Project TU149/13‐1, 443361515). This project has also received funding from the joint European Union's Horizon 2020 and DFG research and innovation programme FLAG‐ERA under grant TU149/9‐1 (397373225). Ulm and Jena acknowledge financial support of the joint DFG project within grant 464283495. The authors from Toulouse received funding from the Institute for Quantum Technologies Occitanie, ANR IXTASE and the Institut Universitaire de France. Growth of hexagonal boron nitride crystals was supported by the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Number JP20H00354, and the CREST (JPMJCR15F3), JST. A.V.K. further thanks DFG for the support through Project KR 4866/8‐1 and the Collaborative Research Center “Chemistry of Synthetic 2D Materials” SFB‐1415‐417590517. The authors also thank the HZDR Computing Center, HLRS, Stuttgart, Germany, and TU Dresden Cluster “Taurus” for generous grants of CPU time. The authors thank Stephanie Höppener and Ulrich S. Schubert for enabling the Raman spectroscopy and microscopy studies at the Jena Center for Soft Matter (JCSM). Publisher Copyright: © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH. One-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic-equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton–phonon coupling and enable an exciton g-factor of −3.3.

Funding Information: J.L. and T.J. contributed equally to this work. The USF‐group acknowledges financial support from the NSF through award no. 2140038. A.V.K. thanks the German Research Foundation (DFG), projects KR 4866/2‐1, and KR 4866/7‐1 for the support. The authors further acknowledge the Gauss Centre for Supercomputing e.V. (www.gauss‐centre.eu) for providing computing time on the GCS Supercomputer HAWK at Höchstleistungsrechenzentrum Stuttgart (www.hlrs.de) and TU Dresden (Taurus cluster) for generous grants of CPU time. Publisher Copyright: © 2022 Wiley-VCH GmbH Edges and point defects in layered dichalcogenides are important for tuning their electronic and magnetic properties. By combining scanning tunneling microscopy (STM) with density functional theory (DFT), the electronic structure of edges and point defects in 2D-PtSe2 are investigated where the 1.8 eV bandgap of monolayer PtSe2 facilitates the detailed characterization of defect-induced gap states by STM. The stoichiometric zigzag edge terminations are found to be energetically favored. STM and DFT show that these edges exhibit metallic 1D states with spin polarized bands. Various native point defects in PtSe2 are also characterized by STM. A comparison of the experiment with simulated images enables identification of Se-vacancies, Pt-vacancies, and Se-antisites as the dominant defects in PtSe2. In contrast to Se- or Pt-vacancies, the Se-antisites are almost devoid of gap states. Pt-vacancies exhibit defect induced states that are spin polarized, emphasizing their importance for inducing magnetism in PtSe2. The atomic-scale insights into defect-induced electronic states in monolayer PtSe2 provide the fundamental underpinning for defect engineering of PtSe2-monolayers and the newly identified spin-polarized edge states offer prospects for engineering magnetic properties in PtSe2 nanoribbons.

Water adsorption on transition metal dichalcogenides and other 2D materials is generally governed by weak van der Waals interactions. This results in a hydrophobic character of the basal planes, and defects may play a significant role in water adsorption and water cluster nucleation. However, there is a lack of detailed experimental investigations on water adsorption on defective 2D materials. Here, by combining low-temperature scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations, we study in that context the well-defined mirror twin boundary (MTB) networks separating mirror-grains in 2D MoSe2. These MTBs are dangling bond-free extended crystal modifications with metallic electronic states embedded in the 2D semiconducting matrix of MoSe2. Our DFT calculations indicate that molecular water also interacts similarly weak with these MTBs as with the defect-free basal plane of MoSe2. However, in low temperature STM experiments, nanoscopic water structures are observed that selectively decorate the MTB network. This localized adsorption of water is facilitated by functionalization of the MTBs by hydroxyls formed by dissociated water. Hydroxyls may form by dissociating of water at undercoordinated defects or adsorbing of radicals from the gas phase in the UHV chamber. Our DFT analysis indicates that the metallic MTBs adsorb these radicals much stronger than on the basal plane due to charge transfer from the metallic states into the molecular orbitals of the OH groups. Once the MTBs are functionalized with hydroxyls, molecular water can attach to them, forming water channels along the MTBs. This study demonstrates the role metallic defect states play in the adsorption of water even in the absence of unsaturated bonds that have been so far considered to be crucial for adsorption of hydroxyls or water. This journal is

The adsorption and dissociation of water molecules on two-dimensional transition metal dichalcogenides (TMDs) is expected to be dominated by point defects, such as vacancies, and edges. At the same time, the role of grain boundaries, and particularly, mirror twinboundaries (MTBs), whose concentration in TMDs can be quite high, is not fully understood. Using density functional theory calculations, we investigate the interaction of water, hydroxyl groups, as well as oxygen and hydrogen molecules with MoSe2 monolayers when MTBs of various types are present. We show that the adsorption of all species on MTBs is energetically favorable as compared to that on the basal plane of pristine MoSe2, but the interaction with Se vacancies is stronger. We further assess the energetics of various surface chemical reactions involving oxygen and hydrogen atoms. Our results indicate that water dissociation on the basal plane should be dominated by vacancies even when MTBs are present, but they facilitate water clustering through hydroxyl groups at MTBs, which can anchor water molecules and give rise to the decoration of MTBs with water clusters. Also, the presence of MTBs affects oxygen reduction reaction (ORR) on the MoSe2 monolayer. Unlike Se vacancies which inhibit ORR due to a high overpotential, it is found that the ORR process on MTBs is more efficient, indicating their important role in the catalytic activity of MoSe2 monolayer and likely other TMDs.

Exfoliation of atomically thin layers from non-van der Waals bulk solids gave rise to the emergence of a new class of two-dimensional (2D) materials, such as hematene (Hm), a structure just a few a...

openaire: EC/H2020/720964/EU//npSCOPE Two-dimensional (2D) materials with nanometer-size holes are promising systems for DNA sequencing, water purification, and molecule selection/separation. However, controllable creation of holes with uniform sizes and shapes is still a challenge, especially when the 2D material consists of several atomic layers as, e.g., MoS2, the archetypical transition metal dichalcogenide. We use analytical potential molecular dynamics simulations to study the response of 2D MoS2 to cluster irradiation. We model both freestanding and supported sheets and assess the amount of damage created in MoS2 by the impacts of noble gas clusters in a wide range of cluster energies and incident angles. We show that cluster irradiation can be used to produce uniform holes in 2D MoS2 with the diameter being dependent on cluster size and energy. Energetic clusters can also be used to displace sulfur atoms preferentially from either top or bottom layers of S atoms in MoS2 and also clean the surface of MoS2 sheets from adsorbents. Our results for MoS2, which should be relevant to other 2D transition metal dichalcogenides, suggest new routes toward cluster beam engineering of devices based on 2D inorganic materials.

The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantized energy levels in the valence band are observed wherever upwards band bending takes place. Focusing on the common 4|4E mirror twin boundary, density functional theory calculations give an estimate of its charging, which agrees well with electrostatic modeling. We show that the line charge can also be assessed from the filling of the boundary-localized electronic band, whereby we provide a measurement of the theoretically predicted quantized polarization charge at MoS$_2$ mirror twin boundaries. These calculations elucidate the origin of band bending and charging at these 1D defects in MoS$_2$. The 4|4E mirror twin boundary not only impairs charge transport of electrons and holes due to band bending, but holes are additionally subject to a potential barrier, which is inferred from the independence of the quantized energy landscape on either side of the boundary.

Oxygen electrocatalysis is vital for advanced energy technologies, but inordinate challenges remain due to the lack of highly active earth-abundant catalysts. Herein, by nanostructuring and defect engineering, we enhance the catalytic properties of naturally occurring, but normally inactive ore hematite (Ht) by converting it to hematene (Hm) with oxygen vacancies (Ov-Hm), which becomes an efficient oxygen evolution reaction (OER) catalyst, being even superior to the state-of-the-art catalyst IrO2/C, with a current density of 10 mA cm−2 at a lower overpotential of 250 mV. First-principles calculations reveal that the reduced dimensionality and defects on the Hm surface locally modify the charge around the adsorption sites, which results in a reduction of the potential barrier in the OER process. Our experimental and theoretical insights suggest a promising route to the development of a highly active electrocatalyst from the naturally occurring and abundant material for OER applications.

Similar to their bulk 3D counterparts, the properties of two-dimensional (2D) materials can be tuned by controllable introduction of impurities and defects using beams of energetic ions, which requires complete microscopic understanding of their response to ion irradiation. The behavior of 2D materials under ion beam is also interesting in the context of their applications in radiation-hostile environments such as cosmic space. While irradiation effects in 3D systems are well understood, a growing body of experimental facts indicate that many concepts of energetic particle-solid interaction developed for 3D materials are not applicable to 2D systems due to their very geometry, or require substantial modifications. In this Chapter, we discuss at length the response of 2D materials to ion irradiation in different regimes with the main focus on the role of reduced dimensionality. We illustrate the differences between the impact of ions on 3D and 2D materials by examples taken from the recent theoretical and experimental studies on the response of 2D materials to ion irradiation and outline general trends in their behavior under irradiation. Finally, we discuss how ion beams can be used to engineer the structure and properties of 2D materials.

npj 2D materials and applications 6(1), 42 (2022). doi:10.1038/s41699-022-00318-4, Published by Nature Publishing Group, London

Funding Information: We acknowledge funding from the German Research Foundation (DFG), project KR 48661/1, and through the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. We further thank the Gauss Centre for Supercomputing e.V. ( www.gauss-centre.eu ) for providing computing time on the GCS Supercomputer HAWK at Höchstleistungsrechenzentrum Stuttgart ( www.hlrs.de ) and also TU Dresden (Taurus cluster) for generous grants of CPU time. The USF group acknowledges financial support from NSF through awards 1801199 and 2140038. Publisher Copyright: © 2021 American Chemical Society. Owing to the relatively strong interlayer interaction, the platinum dichalcogenides exhibit tunability of their electronic properties by controlling the number of layers. Both PtSe2 and PtTe2 display a semimetal to semiconductor transition as they are reduced to bi-or single layers. The value of the fundamental band gap, however, has been inferred only from density functional theory (DFT) calculations, which are notoriously challenging, as different methods give different results, and currently, there is no experimental data. Here, we determine the band gap as a function of the number of layers by local scanning tunneling spectroscopy on molecular beam epitaxy (MBE)-grown PtSe2 and PtTe2 islands. We find band gaps of 1.8 and 0.6 eV for mono-and bilayer PtSe2, respectively, and 0.5 eV for monolayer PtTe2. Trilayer PtSe2 and bilayer PtTe2 are semimetallic. The experimental data are compared to DFT calculations carried out at different levels of theory. The calculated band gaps may differ significantly from the experimental values, emphasizing the importance of the experimental work. We further show that the variations in the calculated fundamental band gap in bilayer PtSe2 are related to the computed separation of the layers, which depends on the choice of the van der Waals functional. This sensitivity of the band gap to interlayer separation also suggests that the gap can be tuned by uniaxial stress, and our simulations indicate that only modest pressures are required for a significant reduction of the gap, making Pt dichalcogenides suitable materials for pressure sensing.

Funding Information: The authors thank the HZDR Computing Center, HLRS, Stuttgart, Germany, and TU Dresden Cluster “Taurus” for generous grants of CPU time. The authors acknowledge the Leibniz Foundation (project ENGRAVE Nr. K335/2020) for support. A.V.K. also thanks the German Research Foundation (DFG) for funding through project KR 4866/6‐1 and the collaborative research center “Chemistry of Synthetic 2D Materials” SFB‐1415‐417590517. The authors thank Dr. M. Ghorbani‐Asl for fruitful discussions. The authors also thank the European Cooperation in Science and Technology (COST) action CA19140 “FIT4NANO” ( https://www.fit4nano.eu ) for support. Publisher Copyright: © 2022 The Authors. physica status solidi (RRL) Rapid Research Letters published by Wiley-VCH GmbH. Using first-principles and analytical potential atomistic simulations, production of defects in epitaxial graphene (EG) on SiC upon ion irradiation for ion types and energies accessible in helium-ion microscope is studied. Graphene-SiC systems consisting of the buffer (zero) graphene layer and SiC substrate, as well as one (monolayer) and two (bilayer) additional graphene layers, are focused on. The probabilities for single, double, and more complex vacancies to appear upon impacts of energetic ions in each graphene layer as functions of He- and Ne-ion energies are calculated and the data are compared with those obtained for free-standing graphene. The results indicate that the role of the substrate is minimal for He-ion irradiation with energies above 5 keV, which can be associated with a low sputtering yield from this system upon ion irradiation, as compared with the common Si/SiO2 substrate. In contrast, SiC substrate has a significant effect on defect production upon Ne-ion irradiation. The results can serve as a guide to the experiments on ion irradiation of EG to choose the optimum ion beam parameters for defect-mediated engineering of such systems, for example, for creating nucleation centers to grow other 2D materials, such as h-BN, on top of the irradiated EG.

Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is important to enhance the trion emission and its stability. In this study, we construct a MoSe2/FePS3 van der Waals heterostructure (vdWH) with type-I band alignment, which allows for carriers injection from FePS3 to MoSe2. At low temperatures, the neutral exciton (X0) emission in this vdWH is almost completely suppressed. The ITrion/Ix0 intensity ratio increases from 0.44 in a single MoSe2 monolayer to 20 in this heterostructure with the trion charging state changing from negative in the monolayer to positive in the heterostructure. The optical pumping with circularly polarized light shows a 14% polarization for the trion emission in MoSe2/FePS3. Moreover, forming such type-I vdWH also gives rise to a 20-fold enhancement of the room temperature photoluminescence from monolayer MoSe2. Our results demonstrate a novel approach to convert excitons to trions in monolayer 2D TMDCs via interlayer doping effect using type-I band alignment in vdWH., 21 pages, including the suppl. materials, accepted at Adv. Fun. Mater

Funding Information: We acknowledge funding from the German Research Foundation (DFG), project KR 48661/1, and through the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. We acknowledge the German Research Foundation (DFG) and the Ministry of Science, Research and the Arts (MWK) of the federal state of Baden-Württemberg, Germany, in the frame of the SALVE (sub-Angström low-voltage electron microscopy) project (KA1295/21-1). We further thank HLRS, Stuttgart, Germany, and TU Dresden (Taurus cluster) for the generous grant of CPU time. Publisher Copyright: © Atom migrations in single-layer 1H-MoTe2 are studied with Cc/Cs-corrected high-resolution transmission electron microscopy at an electron energy of 40 keV using the electron beam simultaneously for material modification and imaging. After creating tellurium vacancies and vacancy lines, we observe their migration pathways across the lattice. Furthermore, we analyze phase transformations from the 1H- to the 1T′-phase associated with the strain induced due to the formation of Te vacancy lines. Combining the experimental data with the results of first-principles calculations, we explain the energetics and driving forces of point- and line-defect migrations and the phase transformations due to an interplay of electron-beam-induced energy input, atom ejection, and strain spread. Our results enhance the understanding of defect dynamics in 2D transition metal dichalcogenides, which should facilitate tailoring their local optical and electronic properties.

The adsorption and dissociation of water molecules on two-dimensional transition metal dichalcogenides (TMDs) is expected to be dominated by point defects, such as vacancies, and edges. At the same time, the role of grain boundaries, and particularly, mirror twinboundaries (MTBs), whose concentration in TMDs can be quite high, is not fully understood. Using density functional theory calculations, we investigate the interaction of water, hydroxyl groups, as well as oxygen and hydrogen molecules with MoSe

Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. The optoelectronic functionality of 2D heterostructure devices is critically dependent on the relative rotation angle of the layers. However, the role of the relative rotation angle of the constituent layers on intralayer absorption is not clear yet. Here, we investigate MoS2/WSe2 vdW heterostructures using monochromated low-loss electron energy loss (EEL) spectroscopy combined with aberration-corrected scanning transmission electron microscopy and report that momentum conservation is a critical factor in the intralayer absorption of TMDC vdW heterostructures. The evolution of the intralayer excitonic low-loss EEL spectroscopy peak broadenings as a function of the rotation angle reveals that the interlayer charge transfer rate can be about an order of magnitude faster in the aligned (or anti-aligned) case than in the misaligned cases. These results provide a deeper insight into the role of momentum conservation, one of the fundamental principles governing charge transfer dynamics in 2D vdW heterostructures.