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1. Compensation engineering for uniform n-type silicon ingots

Author

Antoine Thomas, Bastien Dehestru, Mustapha Lemiti, Roland Einhaus, Erwann Fourmond, Maxime Forster, Andres Cuevas, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), Apollon Solar, Australian National University (ANU), and Australian National University - Department of engineering (ANU)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Compensation (engineering), Monocrystalline silicon, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Ingot, Diffusion (business), Gallium, Boron, 010302 applied physics, Renewable Energy, Sustainability and the Environment, business.industry, Doping, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract

International audience; This paper addresses a major issue related to the use of upgraded-metallurgical grade silicon for n-type solar cells. We show that n-type silicon ingots, grown from silicon feedstock containing both boron and phosphorus, display a vertical net doping variation which is incompatible with high-yield production of high-efficiency solar cells. As a solution, we propose to use compensation engineering, by means of gallium co-doping, and demonstrate its potential to control the net doping along the ingot height. The resulting material exhibits high minority carrier diffusion length gratefully to compensation but degrades upon illumination due to the activation of the boron-oxygen defect. This latter degradation remains an important though not unsurmountable challenge for making high-efficiency n-type solar cells with upgraded-metallurgical grade silicon.

Published
2013
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2. Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

Author

A. Thomas, Mustapha Lemiti, B. Dehestru, Fiacre Rougieux, Andres Cuevas, Erwann Fourmond, Maxime Forster, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), Apollon Solar, Australian National University - Department of engineering (ANU), and Australian National University (ANU)

Subjects
Electron mobility, Materials science, Silicon, ionization of dopant, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Molecular physics, Temperature measurement, Hall effect, Ionization, 0103 physical sciences, phosphorus, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, carrier mobility, gallium, 010302 applied physics, Dopant, scattering, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], compensated silicon, Ionization energy, boron, 0210 nano-technology
Abstract

International audience; In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room-temperature are shown to be the majority-dopant concentration, its ionization energy and type and the compensation level. We show that both the majority-and the minority-carrier mobilities are lower in compensated Si than expected by Klaassen's model and that the discrepancy increases with the compensation level at room-T. The study of the T-dependence of the majority-carrier mobility shows that there is no compensation-specific mechanism and that the reduction of the screening in compensated Si cannot explain alone the observed gap between experimental and theoretical mobility.

Published
2013
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3. Impact of wafer quality on boron-diffused n-type bifacial solar cells

Author

Forster, Maxime, Nichiporuk, O., Degoulange, J., Picard, E., SEMMACHE, B., Focsa, A., Fourmond, Erwann, Pelissier, B., Lemiti, Mustapha, Apollon Solar (Apollon Solar), Apollon Solar, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d'Electronique du Solide et des Systèmes (InESS), Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Inl, Laboratoire INL UMR5270

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; no abstract

Published
2014

4. Impact of compensation on boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Author

Forster, Maxime, Degoulange, J., Einhaus, R., Galbiati, G., Rougieux, E., Cuevas, A., Fourmond, Erwann, Lemiti, Mustapha, Apollon Solar (Apollon Solar), Apollon Solar, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Inl, Laboratoire INL UMR5270

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2014

5. Method for doping a semiconductor

Author

Forster, Maxime, Fourmond, Erwann, Stadler, Jacky, Einhaus, Roland, Lauvray, Hubert, Apollon Solar (Apollon Solar), Apollon Solar, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), SILTRONIX (SILTRONIX), Siltronix, and Fourmond, Erwann

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Published
2012

6. Electrical properties of boron, phosphorus and gallium co-doped silicon

Author

Fourmond, Erwann, Forster, Maxime, Einhaus, Roland, Lauvray, Hubert, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), Apollon Solar, and Fourmond, Erwann

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], silicon, carriers mobility, doping compensation, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

à paraître dans Energy Procedia; International audience; A number of ingots were grown from solar grade poly Silicon, to which Boron, Phosphorous and Gallium were added as dopants. The introduction of Gallium as a third dopant allowed for a better control of the resistivity and the doping type during ingot growth. Measured resistivity in this material is shown to be systematically higher than that calculated using Scheil's law for the dopants distribution and Klaassen's model for the majority carrier mobility. This resistivity underestimation is shown to be, at least partially, due to a reduction of the majority carrier mobility in highly compensated Si compared to Klaassen's model. A similar reduction is observed for the minority carrier mo- bility. We propose a correction term in the mobility calculation, to allow a greater accuracy in the prediction of the resistivity and mobility of compensated solar grade silicon.

Published
2011

7. Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Author

Hubert Lauvray, Roland Einhaus, Mustapha Lemiti, J. Kraiem, Maxime Forster, Erwann Fourmond, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), Apollon Solar, INL - Photovoltaïque (INL - PV), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL)

Subjects
Electron mobility, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Impurity, 0103 physical sciences, Ingot, Gallium, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Boron, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Metallurgy, Doping, Carrier lifetime, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract

In this paper, we investigate gallium co-doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p-type ingot with high resistivity despite high B and P contents in the silicon. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier mobility measurements indicate that this material is suitable for the realization of solar cells with comparable efficiencies to standard material. Significant light-induced degradation of minority carrier lifetime is however revealed to occur in this material. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Published
2011
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8. Doping engineering to increase the material yield during crystallization of B and P compensated silicon

Author

Forster, Maxime, Fourmond, Erwann, Einhaus, Roland, Lauvray, Hubert, Kraiem, Jed, Lemiti, Mustapha, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), and Apollon Solar

Subjects
inorganic chemicals, Silicon Feedstock, Crystallisation and Wafering, technology, industry, and agriculture, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 02 engineering and technology, Wafer-Based Silicon Solar Cells and Materials Technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 0210 nano-technology, 7. Clean energy, 01 natural sciences, 0104 chemical sciences
Abstract

25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1250-1253, In this paper, we investigate gallium co-doping during crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p-type ingot with high resistivity despite high B and P contents in the silicon melt. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier mobility measurements indicate that this material is suitable for the realization of solar cells with comparable efficiencies to standard material. Significant light-induced degradation of minority carrier lifetime is however revealed to occur in this material as in standard boron-doped silicon.

Published
2010
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9. New method for grain size characterization of a multi-crystalline silicon ingot

Author

Forster, Maxime, Fourmond, Erwann, Lebrun, Jean-Marie, Einhaus, Roland, Kraiem, Jed, Lemiti, Mustapha, Apollon Solar (Apollon Solar), Apollon Solar, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Fourmond, Erwann

Subjects
Silicon Feedstock, Crystallisation and Wafering, 0205 materials engineering, 020502 materials, 020209 energy, 0202 electrical engineering, electronic engineering, information engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], crystallisation, silicon, 02 engineering and technology, Wafer-based Silicon Solar Cells and Materials Technology, grain, 7. Clean energy, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 1286-1289, In order to estimate the quality of the crystallisation process of multi-crystalline Silicon ingots, we have developed a new optical method for the determination of grain sizes on as-cut wafers that were taken from different height positions of the ingot. This fast method is based on image analysis and allows in a simple way to get numerical data which represent the crystallographic quality of silicon wafers. The obtained data were used to calculate a grain size distribution over the analysed wafer area as well as an average grain size by using two different algorithms. It was thus possible to represent the average grain size as a function of ingot height, which indicates ingot regions of lower crystalline quality, for example regions of equiaxed growth of very small grains (“grit”). This technique was used for the characterisation of different multi-crystalline Silicon ingots, using Silicon feedstock of different quality (electronic, upgraded metallurgical or solar grade), and also to monitor the impact of modifications of the crystallisation process parameters on the grain sizes distribution. It was found that this method is able to give a first qualitative impression of the multi-crystalline ingots and wafers which in the end are used to produce solar cells.

Published
2009

10. Refining of metallurgical silicon for crystalline solar cells

Author

Fourmond, Erwann, Ndzogha, Cyrille, Pelletier, David, Delannoy, Yves, Trassy, Christian, Caratini, Y., Baluais, G., Einhaus, R., Martinuzzi, Santo, Perichaud, Isabelle, Elaboration par procédés magnétiques (EPM), Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), INVENSIL (INVENSIL), Pechiney, Apollon Solar (Apollon Solar), Apollon Solar, Laboratoire de thermodynamique, propriétés électriques, contraintes, structures aux échelles nanométriques (TECSEN), Université Paul Cézanne - Aix-Marseille 3-Centre National de la Recherche Scientifique (CNRS), and Fourmond, Erwann

Subjects
Metallurgical-Grade, Silicon purification, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], PV Materials, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

International audience; A plasma-retining technique is applied to upgraded metallurgical grade silicon (UMG) to produce solar grade silicon for multi-c silicon ingots at direct costs lower than 15€/kg. Using oxygen and hydrogen as reactive gases injected in the plasma, boron is removed from the material mainly in form of BOH and BO. The boron volatili- Zation time has been reduced to 50 min compared to previous processes, by increasing the temperature of the silicon bath. At the same time, the Al, Ca, C, O concentrations are strongly reduced. From a Íirst batch of puritied UMG Silicon, multi-crystalline ingots (l2kg), wafers (125X125mm2) and solar cells have been produced for an evaluation of this intermediate material. The obtained solar cells gave efticiencies of up to ll.7%. Process development towards an up-scaled pilot equipment is on the Way to further increase the puritication efticiency.

Published
2004

11. Increase in the lifetime of a photon and in the efficiency of raman scattering and second-harmonic generation processes in porous silicon carbide

Author

A. Pastushenko, Vladimir Lysenko, V. Yu. Timoshenko, A. A. Sokolov, A. V. Semenov, Leonid A. Golovan, Tetyana Nychyporuk, Institut Charles Sadron (ICS), Université de Strasbourg (UNISTRA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Lysenko, Vladimir

Subjects
Photon, Materials science, Physics and Astronomy (miscellaneous), Solid-state physics, Scattering, business.industry, Second-harmonic generation, 7. Clean energy, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols.namesake, Wavelength, Optics, Femtosecond, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, Order of magnitude, Raman scattering
Abstract

Raman scattering and second-harmonic generation processes in porous layers obtained by the electrochemical etching of polycrystalline silicon carbide, which contain nanocrystals with dimensions from several to hundreds of nanometers, have been studied. It has been found that the efficiencies of Raman scattering and second-harmonic generation in layers of porous silicon carbide increase by several times and more than two orders of magnitude, respectively, compared to the values in the initial sample. The efficiency of transformation to the second harmonic reaches 0.1% at pumping by femtosecond pulses with a wavelength of 1240 nm. The lifetime of a photon in layers of porous silicon carbide has been estimated as more than 2 ps from the measurement of the cross-correlation functions; this value indicates the deceleration of light in this optically inhomogeneous medium owing to multiple scattering. This effect in layers of porous silicon carbide explains the observed increase in the efficiencies of Raman scattering and second-harmonic generation.

Published
2015
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12. Lifetime Degradation on n-type Wafers with Boron-diffused and SiO2/SiN-passivated Surface

Author

S. Parola, Clémentine Renevier, Erwann Fourmond, E. Picard, Maxime Forster, Marine Le Coz, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), Apollon Solar, Irysolar, and SEMCO-ENGINEERING GROUP

Subjects
inorganic chemicals, Materials science, Passivation, business.industry, Thermal effect, chemistry.chemical_element, Thermal aging, Carrier lifetime, [SPI.TRON]Engineering Sciences [physics]/Electronics, n-type silicon, chemistry, Energy(all), boron diffusion, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Degradation (geology), Wafer, lifetime degradation, Boron, business, Layer (electronics)
Abstract

International audience; We observe minority carrier lifetime degradation in n-type wafers with boron-diffused surface and SiO2/SiN pas-sivation when exposed to illumination or thermal aging. This degradation is not observed on control wafers with phosphorus-diffused surfaces and identical passivation under the same treatment. Boron-diffused wafers with Si-rich SiN or Al2O3 passivation do not degrade either. Both boron-diffused layer and SiO2/SiN are thus necessary to observe this degradation. Experiments on different aging conditions indicate that the degradation is due to a thermal effect accelerated by injection of excess carriers.

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13. Self-regulated hydrogen generation with the use of nano-powders: application for portable fuel cells

Author

A. Pastushenko, V. Skryshevsky, S. Litvinenko, Vladimir Lysenko, Apollon Solar, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Lysenko, Vladimir

Subjects
Aqueous solution, Materials science, Silicon, Hydrogen, Capillary action, chemistry.chemical_element, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, 0104 chemical sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry, Chemical engineering, Aluminium, Oxidizing agent, Nano, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Hydrogen production
Abstract

Self-regulated hydrogen production at room temperature and atmosphere pressure is described in details.Basic idea of our approach is based on a precise auto-tuning of the oxidizing aqueous solution arrival ontohydrogenated silicon or aluminum nano-powders. The used self-regulation principle is completely passivee.g. neither electrical power sources, no regulating electronics are required. The system functioning wassimulated numerically and checked experimentally. The numerical simulation allowed definition of themain optimal parameters of the working system (pressure, capillary tube diameter, tank volumes) and anexperimental prototype based on the simulated results was built and used for hydrogen supplying to aportable PaxiTech® fuel cell.

Published
2018

14. Nonlinear optical properties of silicon carbide (SiC) nanoparticles by carbothermal reduction

Author

Cécile Joulaud, Alexander Yu. Kharin, D. Mishchuk, Yury V. Ryabchikov, Luigi Bonacina, I. Tishchenko, Victor Yu. Timoshenko, Yannick Mugnier, Andrii Rogov, Alain Géloën, Alexander Kyrychenko, Vladimir Lysenko, Anton Pastushenko, Jean-Pierre Wolf, R. Le Dantec, GAP Biophoton, University of Geneva, R&D Department, Laboratoire SYstèmes et Matériaux pour la MEcatronique (SYMME), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]), Apollon Solar, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon, Cardiovasculaire, métabolisme, diabétologie et nutrition (CarMeN), Institut National de la Recherche Agronomique (INRA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Hospices Civils de Lyon (HCL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Hospices Civils de Lyon (HCL)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Institut National de la Recherche Agronomique (INRA)

Subjects
cell labelling, Materials science, [SDV]Life Sciences [q-bio], Physics::Optics, Nanoparticle, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Condensed Matter::Materials Science, chemistry.chemical_compound, symbols.namesake, Carbothermic reaction, Physics::Atomic and Molecular Clusters, Silicon carbide, semiconductor Nanoparticle, Rayleigh scattering, second harmonic generation, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Nonlinear system, chemistry, Excited state, Harmonic, symbols, multiphoton Microscopy, Optoelectronics, 0210 nano-technology, business, Luminescence
Abstract

International audience; SiC nanoparticles by carbothermal reduction show promising properties in terms of second harmonic and multiphoton excited luminescence. In particular, we estimate a nonlinear efficiency < d > = 17 pm/V, as obtained by Hyper Rayleigh Scattering. We also present results of cell labelling to demonstrate the potential use of SiC nanoparticles for nonlinear bioimaging by simultaneous detection of second harmonic and luminescence.

Published
2016
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15. Towards Specifications of n-type Silicon Purified via the Metallurgical Route

Author

Yannick Veschetti, J. Kraiem, Thomas Schutz-Kuchly, Olivier Palais, V. Sanzone, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Apollon Solar, and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Fabrication, Materials science, Silicon, chemistry.chemical_element, solar-grade silicon, 02 engineering and technology, Raw material, 01 natural sciences, 7. Clean energy, Monocrystalline silicon, compensation, Energy(all), 0103 physical sciences, Wafer, Ingot, phosphorus, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Metallurgy, Doping, Carrier lifetime, 021001 nanoscience & nanotechnology, n-type silicon, chemistry, solar cells, electrical properties, 0210 nano-technology, boron
Abstract

This study focuses on the fabrication and the characterization of solar cells using highly doped boron-phosphorus compensated n-type multicrystalline silicon. Two ingots were used and compared for this study. One ingot was crystallized from a silicon feedstock purified via the metallurgical route. The second ingot was crystallized from an electronic grade silicon feedstock in order to be metallic impurity free. Both ingots were intentionally compensated with a similar boron and phosphorus amount in the initial feedstock. Chemical and electrical characterizations were carried out on each ingot and similar carrier lifetimes were reported. Large area solar cells were fabricated on wafers selected at different positions along both ingots with a reference fabrication process leading to 18.4% efficiency on FZ material. No differences in terms of cells performances were observed between both ingots. Efficiencies between 13.5% and 15.0% were reported and were found to be limited by the low resistivity values of this material. This is consistent with the carrier lifetime previously measured which underlines the weak influence of the metallic impurities initially present in the wafers. Some perspectives are given in terms of feedstock specifications to exploit the potential of this material.

Published
2011
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