Search

Your search keyword '"Apodaca, Roger T"' showing total 4 results
Start Over Author "Apodaca, Roger T"
4 results on '"Apodaca, Roger T"'

2. TDDB and Pulse-Breakdown Studies of Si-Rich \SiNx Antifuses and Antifuse-Based ROMs.

Author

Kaplar, Robert J., Habermehl, Scott D., Apodaca, Roger T., Havener, Brad, and Roherty-Osmun, Elizabeth

Subjects
ELECTRIC breakdown, ELECTRIC fuses, READ-only memory, SILICON nitride, RELIABILITY in engineering, QUANTUM tunneling, THICK films
Abstract

Antifuses are electronic devices that can be irreversibly converted from a high-resistance state to a low-resistance state. Thus, they are ideal candidates for one-time-programmable many-times-readable nonvolatile memories. In this paper, the reliability and the programming characteristics of Si-rich \SiNx antifuses have been studied using time-dependent dielectric breakdown and pulse-breakdown measurements on both single-device test structures and full read-only memories. Contrary to measurements on thick films in which the Poole–Frenkel barrier lowering dominates breakdown, these measurements on fully processed and integrated antifuses indicate that a Fowler–Nordheim-like mechanism governs both programming and long-term reliability. [ABSTRACT FROM AUTHOR]

Published
2011
Full Text
View/download PDF

3. (Invited) Development, Characterization, and Modeling of a TaOx ReRAM for a Neuromorphic Accelerator

Author

Marinella, Matthew J., Mickel, Patrick R, Lohn, Andrew J, Hughart, David R., Bondi, Robert, Mamaluy, Denis, Hjalmarson, Harold P., Stevens, James E, Decker, Seth, Apodaca, Roger T, Evans, Brian, Bradley, James, Rothganger, Fred, James, Conrad D., and DeBenedictis, Erik P

Abstract

Resistive random access memory (ReRAM), or memristors, may be capable of significantly improving the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a single device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAM-based neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer insight into the factors responsible for this variability.

Published
2014

4. (Invited) Development, Characterization, and Modeling of a TaOxReRAM for a Neuromorphic Accelerator

Author

Marinella, Matthew J., Mickel, Patrick R, Lohn, Andrew J, Hughart, David R., Bondi, Robert, Mamaluy, Denis, Hjalmarson, Harold P., Stevens, James E, Decker, Seth, Apodaca, Roger T, Evans, Brian, Aimone, James Bradley, Rothganger, Fred, James, Conrad D., and DeBenedictis, Erik P

Abstract

Resistive random access memory (ReRAM), or memristors, may be capable of significantly improving the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a single device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAM-based neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer insight into the factors responsible for this variability.

Published
2014
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results