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Graphene and graphene-related materials (GRMs) exhibit a unique combination of electronic, optical, and electrochemical properties, which make them ideally suitable for ultrasensitive and selective point-of-care testing (POCT) devices. POCT device-based applications in diagnostics require test results to be readily accessible anywhere to produce results within a short analysis timeframe. This review article provides a summary of methods and latest developments in the field of graphene and GRM-based biosensing in POCT and an overview of the main applications of the latter in nucleic acids and enzymatic biosensing, cell detection, and immunosensing. For each application, we discuss scientific and technological advances along with the remaining challenges, outlining future directions for widespread use of this technology in biomedical applications.

Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electrodes, with no increase in switching power, and low power density$\sim$14$\mu$W/$\mu$m$^2$. We attribute this to a suppressed tunneling current due to the low density of states of graphene near the Dirac point, consistent with the current-voltage characteristics derived from a quantum point contact model. Our devices also have multiple resistive states. This allows storing more than one bit per cell. This can be exploited in a range of signal processing/computing-type operations, such as implementing logic, providing synaptic and neuron-like mimics, and performing analogue signal processing in non-von-Neumann architectures

We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

We report room temperature terahertz detection in hBN/graphene/hBN heterostructures. The obtained record combination of high-speed (response time < 1 ns) and high sensitivity (noise equivalent power ~ 100 pWHz-1/2) is enabled by the photo-thermoelectric effect.

We report room temperature terahertz detection in hBN/graphene/hBN heterostructures, integrated in top-gated field effect transistors. The record combination of high-speed (response time < 1 ns) and high sensitivity (noise equivalent power ~ 100 pWHz-1I2) is enabled by the photo-thermoelectric effect and paves the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspectives for targeting ultrafast applications.

Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}��m^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date., This is the unedited authors' version of the submitted article, published in its final form at http://dx.doi.org/10.1021/acs.nanolett.9b05207 16 Pages, 4 Figures

Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.

Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the understanding and optimization of device operation -- is still lacking. Here we use femtosecond transient absorption spectroscopy, with pump pulse tunability and broadband probing, to monitor the relaxation dynamics of single-layer MoS2 over the entire visible range, upon photoexcitation of different excitonic transitions. We find that, irrespective of excitation photon energy, the transient absorption spectrum shows the simultaneous bleaching of all excitonic transitions and corresponding red-shifted photoinduced absorption bands. First-principle modeling of the ultrafast optical response reveals that a transient bandgap renormalization, caused by the presence of photo-excited carriers, is primarily responsible for the observed features. Our results demonstrate the strong impact of many-body effects in the transient optical response of TMDs even in the low-excitation-density regime., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano after peer review and technical editing by the publisher. To access the final edited and published work see: http://pubs.acs.org/articlesonrequest/AOR-fcCuTYn5m6wiDTIg98Kx

We report the angular distribution of the G and 2D Raman scattering from graphene on glass by detecting back focal plane patterns. The G Raman emission can be described by a superposition of two incoherent orthogonal point dipoles oriented in the graphene plane. Due to double resonant Raman scattering, the 2D emission can be represented by the sum of either three incoherent dipoles oriented 120° with respect to each other, or two orthogonal incoherent ones with a 3:1 weight ratio. Parameter-free calculations of the G and 2D intensities are in excellent agreement with the experimental radiation patterns. We show that the 2D polarization ratio and the 2D/G intensity ratio depend on the numerical aperture of the microscope objective. This is due to the depolarization of the emission and excitation light when graphene is on a dielectric substrate, as well as to tight focusing. The polarization contrast decreases substantially for increasing collection angle, due to polarization mixing caused by the air-dielectric interface. This also influences the intensity ratio I(2D)/I(G), a crucial quantity for estimating the doping in graphene. Our results are thus important for the quantitative analysis of the Raman intensities in confocal microscopy. In addition, they are relevant for understanding the influence of signal enhancing plasmonic antenna structures, which typically modify the sample's radiation pattern.

We report an all-fiber graphene-based gate tunable saturable absorber, optical nonlinearity enhancer, dynamic dispersion controller and electrical feedback accepter. This is used to mode-lock fiber lasers, enabling tunable repetition rate from 20 MHz to 348 GHz, with minimized super-mode noise < -50 dB and timing jitter < 6.62×10−17 s.

Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities and superior electrical and optoelectronic properties 1-7 . Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting 8-16 require a thorough understanding of (nanoscale) heat flow. Here, using time-resolved photocurrent measurements, we identify an efficient out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon polaritons 17-19 in the encapsulating layered material. This hyperbolic cooling is particularly efficient, giving picosecond cooling times for hexagonal BN, where the high-momentum hyperbolic phonon polaritons enable efficient near-field energy transfer. We study this heat transfer mechanism using distinct control knobs to vary carrier density and lattice temperature, and find excellent agreement with theory without any adjustable parameters. These insights may lead to the ability to control heat flow in van der Waals heterostructures.

Graphene is used as the thinnest possible spacer between gold nanoparticles and a gold substrate. This creates a robust, repeatable, and stable subnanometer gap for massive plasmonic field enhancements. White light spectroscopy of single 80 nm gold nanoparticles reveals plasmonic coupling between the particle and its image within the gold substrate. While for a single graphene layer, spectral doublets from coupled dimer modes are observed shifted into the near-infrared, these disappear for increasing numbers of layers. These doublets arise from charger-transfer-sensitive gap plasmons, allowing optical measurement to access out-of-plane conductivity in such layered systems. Gating the graphene can thus directly produce plasmon tuning. © 2013 American Chemical Society., We gratefully acknowledge support from U.K. EPSRC Grants EP/G060649/1, EP/G037221/1, EP/H007024/1, EP/G042357/1, EP/K01711X/1, EP/K017144/1, from ERC Grants LINASS 320503 and NANOPOTS, from Nokia Research Centre, and from a Royal Society Wolfson Research Merit Award, EU Grants RODIN, GENIUS, CareRAMM, Graphene Flagship (contract no. CNECT-ICT-604391), Project FIS2010-19609-C02-01 of the Spanish Ministry of Science and Education and project IT756-13 of the Basque Government for groups in the UPV/EHU. J.M. acknowledges support from the Winton Programme of the Physics of Sustainability.

Graphene is at the center of an ever growing research effort due to its unique properties, interesting for both fundamental science and applications. A key requirement for applications is the development of industrial-scale, reliable, inexpensive production processes. Here we review the state of the art of graphene preparation, production, placement and handling. Graphene is just the first of a new class of two dimensional materials, derived from layered bulk crystals. Most of the approaches used for graphene can be extended to these crystals, accelerating their journey towards applications.

Nonlinear optical processes, such as harmonic generation, are of great interest for various applications, e.g., microscopy, therapy, and frequency conversion. However, high-order harmonic conversion is typically much less efficient than low-order, due to the weak intrinsic response of the higher-order nonlinear processes. Here we report ultra-strong optical nonlinearities in monolayer MoS2 (1L-MoS2): the third harmonic is 30 times stronger than the second, and the fourth is comparable to the second. The third harmonic generation efficiency for 1L-MoS2 is approximately three times higher than that for graphene, which was reported to have a large χ (3). We explain this by calculating the nonlinear response functions of 1L-MoS2 with a continuum-model Hamiltonian and quantum mechanical diagrammatic perturbation theory, highlighting the role of trigonal warping. A similar effect is expected in all other transition-metal dichalcogenides. Our results pave the way for efficient harmonic generation based on layered materials for applications such as microscopy and imaging., Harmonic generation is a nonlinear optical process occurring in a variety of materials; the higher orders generation is generally less efficient than lower orders. Here, the authors report that the third-harmonic is thirty times stronger than the second-harmonic in monolayer MoS2.

We report a spin valve with a few-layer graphene flake bridging highly spin-polarized ${\mathrm{La}}_{0.67}{\mathrm{Sr}}_{0.33}{\mathrm{MnO}}_{3}$ electrodes, whose surfaces are kept clean during lithographic definition. Sharp magnetic switching is verified using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. A naturally occurring high interfacial resistance $\ensuremath{\sim}12\text{ }\text{ }\mathrm{M}\mathrm{\ensuremath{\Omega}}$ facilitates spin injection, and a large resistive switching ($0.8\text{ }\text{ }\mathrm{M}\mathrm{\ensuremath{\Omega}}$ at 10 K) implies a $70--130\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$ spin diffusion length that exceeds previous values obtained with sharp-switching electrodes.

Graphene field-effect transistor (FET) has been successfully demonstrated for terahertz (THz) detection at room temperature. This graphene FET has a differential feeding structure and a high output impedance up to several thousand Ohms. These characteristics significantly challenge the antenna design, especially a high-performance antenna. To alleviate this issue, this paper presents a circularly bended dipole antenna on silicon substrate. The results show that, this novel antenna features a differential pair, a high impedance of 5000 Ohms, a high gain of 9.47 dBi, and also a narrow bandwidth of 3 GHz to filter out input noise. This antenna is a very good candidate for inherent integration, and will significantly improve the performance of the graphene-based THz detector.

We study the ultrafast valley relaxation dynamics in monolayer MoS2 by time resolved Faraday rotation and circular dichroism. We find that the intervalley scattering process is ultrafast and display a peculiar bi-exponential behavior.

Nonlinear optical processes, such as harmonic generation, are of great interest for various applications, e.g., microscopy, therapy, and frequency conversion. However, high-order harmonic conversion is typically much less efficient than low-order, due to the weak intrinsic response of the higher-order nonlinear processes. Here we report ultra-strong optical nonlinearities in monolayer MoS2 (1L-MoS2): the third harmonic is 30 times stronger than the second, and the fourth is comparable to the second. The third harmonic generation efficiency for 1L-MoS2 is approximately three times higher than that for graphene, which was reported to have a large χ(3). We explain this by calculating the nonlinear response functions of 1L-MoS2 with a continuum-model Hamiltonian and quantum mechanical diagrammatic perturbation theory, highlighting the role of trigonal warping. A similar effect is expected in all other transition-metal dichalcogenides. Our results pave the way for efficient harmonic generation based on layered materials for applications such as microscopy and imaging., published version, peerReviewed

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity., Comment: Fixed numerical factors in equations (5) and (6)

Graphene nanoribbons (GNRs) are the counterpart of nanotubes in graphene nanoelectronics. The search for a cheap, parallel, and deterministic technique for practical implementation of these structures is still open. Nanowire lithography (NWL) consists in using nanowires (NWs) as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that oxidized silicon NWs (SiNWs) are a simple and compatible system to implement NWL on graphene. The SiNWs morphology is transferred onto a graphene flake by a low-power O 2 plasma in a deep-reactive-ion-etcher. The process leads to conformal GNRs with diameter comparable to the overlaying NW lateral dimensions. The diameter can be further reduced by multiple O 2 etching steps. Field-effect measurements show the transition to a semiconductor for low diameters.

We investigate near-degenerate four-wave mixing in graphene using femtosecond laser pulse shaping microscopy. Intense near-degenerate four-wave mixing signals on either side of the exciting laser spectrum are controlled by amplitude and phase shaping. Quantitative signal modeling for the input pulse parameters shows a spectrally flat phase response of the near-degenerate four-wave mixing due to the linear dispersion of the massless Dirac Fermions in graphene. Exploiting these properties we demonstrate that graphene is uniquely suited for the intrafocus phase characterization and compression of broadband laser pulses, circumventing disadvantages of common methods utilizing second or third harmonic light.

Interband optical transitions in graphene are subject to pseudospin selection rules. Impulsive excitation with linearly polarized light generates an anisotropic photocarrier occupation in momentum space that evolves at timescales shorter than 100fs. Here, we investigate the evolution of non-equilibrium charges towards an isotropic distribution by means of fluence-dependent ultrafast spectroscopy and develop an analytical model able to quantify the isotropization process. In contrast to conventional semiconductors, the isotropization is governed by optical phonon emission, rather than electron-electron scattering, which nevertheless contributes in shaping the anisotropic photocarrier occupation within the first few fs., Comment: 9 pages

Here we study the exciton valley relaxation dynamics in atomically thin MoS 2 by non-equilibrium optical techniques. A spin polarized excitons population is selectively created in a single valley by circularly polarized ultrashort laser pulses resonant with the optical gap, while the subsequent decay of the valley polarization is measured as a rotation of a linearly polarized probe beam due to a transient Faraday effect. We show that the photoinduced valley polarization in monolayer MoS 2 is quenched after few ps due to an efficient intervalley scattering channel and it displays a peculiar bi-exponential behavior. This rapid time scale is in a good agreement with an intervalley scattering mechanism mediated by an electron-hole exchange interaction. Moreover time resolved circular dichroism experiments performed in the same experimental condition confirms the fast valley relaxation dynamics observed with transient Faraday rotation technique.

We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the same as the DC value and the imaginary part~0. The graphene channel is modelled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time~2.1ps, highlighting the influence of alternating current (AC) electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures

In this work an advanced overview in the field of near-infrared silicon photodetectors, is presented. Proposed photodetectors are based on the internal photoemission effect through a Schottky junction and their fabrication results completely compatible with the silicon technology. Taking advantage of both new structures and new two-dimensional emerging materials, a progressive increase in device performance has been demonstrated along the last years. Our insights show that silicon devices based on the internal photoemission effect are already suitable for power monitoring applications and they could play a key role in the telecommunications opening new frontiers in the field of low-cost silicon photonics. © 2014 AEIT.

We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3 mA/W)$ and a noise equivalent power $\sim 2\times 10^{-9} W/Hz^{-1/2}$ in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems., Comment: 8 pages, 5 figures. Submitted to Applied Physics Letters

We report the observation of strongly temperature-dependent, asymmetric spectral lines in electronic Raman scattering spectra of graphite in a high magnetic field up to 45 T applied along the c-axis. The magnetic field quantizes the in-plane motion, while the out-of-plane motion remains free, effectively reducing the system dimension from three to one. Optically created electron-hole pairs interact with, or shake up, the one-dimensional Fermi sea in the lowest Landau subbands. Based on the Tomonaga-Luttinger liquid theory, we show that interaction effects modify the van Hove singularity to the form $(\omega-\Delta)^{2\alpha-1/2}$ at zero temperature. At finite temperature, we predict a thermal broadening factor that increases linearly with the temperature. Our model reproduces the observed temperature-dependent line-shape, determining $\alpha$ to be $\sim$0.05 at 40 T., Comment: 5 pages, 3 figures

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment.

Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale to a hot Fermi-Dirac distribution, that subsequently cools via phonon emission. Here we combine pump-probe spectroscopy, featuring extreme temporal resolution and broad spectral coverage, with a microscopic theory based on the quantum Boltzmann equation, to investigate electron-electron collisions in graphene during the very early stages of relaxation. We identify the fundamental physical mechanisms controlling the ultrafast dynamics in graphene, in particular the significant role of ultrafast collinear scattering, enabling Auger processes, including charge multiplication, key to improving photovoltage generation and photodetectors., Comment: 11 pages, 5 figures

The magneto-Raman measurements of graphite were performed in a back-scattering Faraday geometry at temperature 10 K in magnetic fields up to 45 T. The experimental data reveal the rich structure of Raman-active excitations dominated by K-point massive electrons. At high magnetic fields the graphite E2g Raman line shows complex multi- component behavior interpreted as magnetophonon resonance coupled electron-phonon modes at graphite’s K-point. Also we found the clear signature of the fundamental, strongly dumped, n=0 magnetophonon resonance associated with H point massless holes.

Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8 eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples., 6 pages, 5 figures

We demonstrate inkjet printing as a viable method for large-area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to ∼95 cm(2) V(-1) s(-1), as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance. This paves the way to all-printed, flexible, and transparent graphene devices on arbitrary substrates.

We perform Raman scattering experiments on natural graphite in magnetic fields up to 45 T, observing a series of peaks due to interband electronic excitations over a much broader magnetic field range than previously reported. We also explore electron-phonon coupling in graphite via magnetophonon resonances. The Raman G peak shifts and splits as a function of magnetic field, due to the magnetically tuned coupling of the E2g optical phonons with the K- and H-point inter-Landau-level excitations. The analysis of the observed anticrossing behavior allows us to determine the electron-phonon coupling for both K- and H-point carriers. In the highest field range (>35 T) the G peak narrows due to suppression of electron-phonon interaction., 5 pages, 4 figures, 1 table

The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.

From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s(-1). However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries.

Surface-enhanced Raman scattering (SERS) exploits surface plasmons induced by the incident field in metallic nanostructures to significantly increase the Raman intensity. Graphene provides the ideal prototype two-dimensional (2d) test material to investigate SERS. Its Raman spectrum is well-known, graphene samples are entirely reproducible, height controllable down to the atomic scale, and can be made virtually defect-free. We report SERS from graphene, by depositing arrays of Au particles of well-defined dimensions on a graphene/SiO(2) (300 nm)/Si system. We detect significant enhancements at 633 nm. To elucidate the physics of SERS, we develop a quantitative analytical and numerical theory. The 2d nature of graphene allows for a closed-form description of the Raman enhancement, in agreement with experiments. We show that this scales with the nanoparticle cross section, the fourth power of the Mie enhancement, and is inversely proportional to the tenth power of the separation between graphene and the center of the nanoparticle. One important consequence is that metallic nanodisks are an ideal embodiment for SERS in 2d.

We use the charged tip of a low-temperature scanning probe microscope to perturb the transport through a graphene nanoconstriction. Maps of the conductance as a function of tip position display concentric halos and, by following the expansion of the halos with back-gate voltage, we are able to identify an elongated domain over the nanoconstriction where they originate. Amplitude modulations of the transmission resonances are correlated with the gradient of the tip-induced potential and we analyze this in terms of modified tunnel coupling between localized states.

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP., 8 pages, 4 figures

We show that strong photoluminescence (PL) can be induced in single-layer graphene using an oxygen plasma treatment. The PL is spatially uniform across the flakes and connected to elastic scattering spectra distinctly different from those of gapless pristine graphene. Oxygen plasma can be used to selectively convert the topmost layer when multilayer samples are treated.

International audience; Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. Since its experimental discovery, graphene continues to attract enormous interest, in particular as a new kind of matter, in which electron transport is governed by a Dirac-like wave equation, and as a model system for studying electronic and phonon properties of other, more complex, graphitic materials[1-4]. Here, we uncover the constitutive relation of graphene and probe new physics of its optical phonons, by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E2g optical mode splits in two components, one polarized along the strain and the other perpendicular to it. This leads to the splitting of the G peak into two bands, which we call G+ and G-, by analogy with the effect of curvature on the nanotube G peak[5-7]. Both peaks red shift with increasing strain, and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The singly degenerate 2D and 2D' bands also red shift, but do not split for small strains. We study the Gruneisen parameters for the phonons responsible for the G, D and D' peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance[8, 9]