Search

Quantum sensing with spin defects in diamond, such as the nitrogen-vacancy (NV) center, enables the detection of various chemical species on the nanoscale. Molecules or ions with unpaired electronic spins are typically probed by their influence on the NV center's spin relaxation. Whereas it is well-known that paramagnetic ions reduce the NV center's relaxation time ($T_1$), here we report on the opposite effect for diamagnetic ions. We demonstrate that millimolar concentrations of aqueous diamagnetic electrolyte solutions increase the $T_1$ time of near-surface NV center ensembles compared to pure water. To elucidate the underlying mechanism of this surprising effect, single and double quantum NV experiments are performed, which indicate a reduction of magnetic and electric noise in the presence of diamagnetic electrolytes. In combination with ab initio simulations, we propose that a change in the interfacial band bending due to the formation of an electric double layer leads to a stabilization of fluctuating charges at the interface of an oxidized diamond. This work not only helps to understand noise sources in quantum systems but could also broaden the application space of quantum sensors towards electrolyte sensing in cell biology, neuroscience and electrochemistry.

The importance of intermediate triplet states and the nature of excited states has gained interest in recent years for the thermally activated delayed fluorescence (TADF) mechanism. It is widely accepted that simple conversion between charge transfer (CT) triplet and singlet excited states is too crude, and a more complex route involving higher-lying locally excited triplet excited states has to be invoked to witness the magnitude of the rate of reverse inter-system crossing (RISC) rates. The increased complexity has challenged the reliability of computational methods to accurately predict the relative energy between excited states as well as their nature. Here, we compare the results of widely used density functional theory (DFT) functionals, CAM-B3LYP, LC-ωPBE, LC-ω*PBE, LC-ω*HPBE, B3LYP, PBE0, and M06-2X, against a wavefunction-based reference method, Spin-Component Scaling second-order approximate Coupled Cluster (SCS-CC2), in 14 known TADF emitters possessing a diversity of chemical structures. Overall, the use of the Tamm–Dancoff Approximation (TDA) together with CAM-B3LYP, M06-2X, and the two ω-tuned range-separated functionals LC-ω*PBE and LC-ω*HPBE demonstrated the best agreement with SCS-CC2 calculations in predicting the absolute energy of the singlet S1, and triplet T1 and T2 excited states and their energy differences. However, consistently across the series and irrespective of the functional or the use of TDA, the nature of T1 and T2 is not as accurately captured as compared to S1. We also investigated the impact of the optimization of S1 and T1 excited states on ΔEST and the nature of these states for three different functionals (PBE0, CAM-B3LYP, and M06-2X). We observed large changes in ΔEST using CAM-B3LYP and PBE0 functionals associated with a large stabilization of T1 with CAM-B3LYP and a large stabilization of S1 with PBE0, while ΔEST is much less affected considering the M06-2X functional. The nature of the S1 state barely evolves after geometry optimization essentially because this state is CT by nature for the three functionals tested. However, the prediction of the T1 nature is more problematic since these functionals for some compounds interpret the nature of T1 very differently. SCS-CC2 calculations on top of the TDA-DFT optimized geometries lead to a large variation in terms of ΔEST and the excited-state nature depending on the chosen functionals, further stressing the large dependence of the excited-state features on the excited-state geometries. The presented work highlights that despite good agreement of energies, the description of the exact nature of the triplet states should be undertaken with caution. The St Andrews team would like to thank the Leverhulme Trust (RPG-2016-047) for financial support. Computational resources have been provided by the Consortium des Équipements de Calcul Intensif (CÉCI), funded by the Fonds de la Recherche Scientifiques de Belgique (F.R.S.-FNRS) under Grant No. 2.5020.11, as well as the Tier-1 supercomputer of the Fédération Wallonie–Bruxelles, infrastructure funded by the Walloon Region under the Grant Agreement n1117545. Y.O. acknowledges funding by the Fonds de la Recherche Scientifique-FNRS under Grant no. F.4534.21 (MIS-IMAGINE). D.B. is a FNRS Research Director. J.C.S.-G. acknowledges funding from the “Ministerio de Ciencia e Innovación” through the PID2019-106114GB-I00 project.

The importance of intermediate triplet states and the nature of excited states has gained interest in recent years for the thermally activated delayed fluorescence (TADF) mechanism. It is widely accepted that simple conversion between charge transfer (CT) triplet and singlet excited states is too crude, and a more complex route involving higher-lying locally excited triplet excited states has to be invoked to witness the magnitude of the rate of reverse intersystem crossing (RISC) rates. The increased complexity has challenged the reliability of computational methods to accurately predict the relative energy between excited states as well as their nature. Here we compare the results of widely used DFT functionals, CAM-B3LYP, LC-ꞷPBE, LC-ꞷ*PBE, LC-ꞷ*HPBE, B3LYP, PBE0 and M06-2X against a wavefunction-based reference method, Spin-Component Scaling second-order approximate Coupled-Cluster (SCS-CC2) in fourteen known TADF emitters possessing a diversity of chemical structures. Overall, the use of the Tamm-Dancoff Approximation (TDA) together with the CAM-B3LYP, M06-2X and the two ꞷ-tuned range-separated functionals LC-ꞷ*PBE and LC-ꞷ*HPBE demonstrated the best agreement with SCS-CC2 calculations in predicting the absolute energy of the singlet S1, and triplet T1 and T2 excited states and their energy differences. However, consistently across the series and irrespective of the functional or the use of TDA, the nature of T1 and T2 is not as accurately captured as compared to S1. The presented work highlights that despite good agreement of energies, the description of the exact nature of the triplet states should be undertaken with caution.

Defect quantum bits (qubits) constitute an important emerging technology. However, it is necessary to explore new types of defects to enable large-scale applications. In this article, we examine the potential of magnesium-vacancy (MgV) in diamond to operate as a qubit by computing the key electronic- and spin properties with robust theoretical methods. We find that the electronic structure of MgV permits the coexistence of two loosely separated spin-states, where both can emerge as a ground state and be interconverted depending on the temperature and external strain. These results demonstrate a route to control the magneto-optical response of a qubit by modulating the operational conditions.

The St Andrews team would like to thank the Leverhulme Trust (RPG-2016-047) for financial support. E. Z.-C. is a Royal Society Leverhulme Trust Senior Research fellow (SRF\R1\201089). Computational resources have been provided by the Consortium des Équipements de Calcul Intensif (CÉCI), funded by the Fonds de la Recherche Scientifiques de Belgique (F.R.S.-FNRS) under Grant No. 2.5020.11, as well as the Tier-1 supercomputer of the Fédération Wallonie-Bruxelles, infrastructure funded by the Walloon Region under the grant agreement n1117545. G.R. acknowledges a grant from the “Fonds pour la formation à la Recherche dans l’Industrie et dans l’Agriculture” (F.R.I.A.) of the F.R.S.-F.N.R.S. Y.O. acknowledges funding by the Fonds de la Recherche Scientifique-FNRS under Grant n° F.4534.21 (MIS-IMAGINE). D.B. is a FNRS Research Director. J.C.S.G. acknowledges “Ministerio de Ciecia e Innovación” of Spain (PID2019-106114GB-I00). With the surge of interest in multiresonant thermally activated delayed fluorescent (MR-TADF) materials, it is important that there exist computational methods to accurately model their excited states. Here, building on our previous work, we demonstrate how the spin-component scaling second-order approximate coupled-cluster (SCS-CC2), a wavefunction-based method, is robust at predicting the ΔEST (i.e., the energy difference between the lowest singlet S1 and triplet T1 excited states) of a large number of MR-TADF materials, with a mean average deviation (MAD) of 0.04 eV compared to experimental data. Time-dependent density functional theory calculations with the most common DFT functionals as well as the consideration of the Tamm-Dancoff approximation (TDA) consistently predict a much larger ΔEST as a result of a poorer account of Coulomb correlation as compared to SCS-CC2. Very interestingly, the use of a metric to assess the importance of higher order excitations in the SCS-CC2 wavefunctions shows that Coulomb correlation effects are substantially larger in the lowest singlet compared to the corresponding triplet and need to be accounted for a balanced description of the relevant electronic excited states. This is further highlighted with coupled cluster singles-only calculations, which predict very different S1 energies as compared to SCS-CC2 while T1 energies remain similar, leading to very large ΔEST, in complete disagreement with the experiments. We compared our SCS-CC2/cc-pVDZ with other wavefunction approaches, namely, CC2/cc-pVDZ and SOS-CC2/cc-pVDZ leading to similar performances. Using SCS-CC2, we investigate the excited-state properties of MR-TADF emitters showcasing large ΔET2T1 for the majority of emitters, while π-electron extension emerges as the best strategy to minimize ΔEST. We also employed SCS-CC2 to evaluate donor–acceptor systems that contain a MR-TADF moiety acting as the acceptor and show that the broad emission observed for some of these compounds arises from the solvent-promoted stabilization of a higher-lying charge-transfer singlet state (S2). This work highlights the importance of using wavefunction methods in relation to MR-TADF emitter design and associated photophysics. Postprint

Crystal impurities, such as atomic vacancies, are known to modulate the charge transport characteristics of two-dimensional (2D) materials. Here, we apply a first-principles-enriched tight-binding modelling approach to assess the influence of sulfur vacancies on the electronic structure and quantum transport characteristics of MoS2 monolayers. To this end, an sp3d5 orthogonal tight-binding (oTB) model of the pristine and defective MoS2 monolayer is mapped with electronic structure calculations performed at the density functional theory level and subsequently used in the real-space Kubo−Greenwood (KG) scheme for charge transport simulations. The calculated charge carrier mobility is found to be sensitive to both the density and spatial arrangement of vacancies. Our oTB/KG simulations predict a drop of mobility by two orders of magnitude when the vacancy concentration is increased from 0.1 to 3%, in excellent agreement with experimental results. The simulation of realistic samples (including specific types of defects) pave a new route toward the accurate understanding and the possible prediction of 2D materials for nanoelectronic devices.

Stacked two-dimensional (2D) heterostructures are evolving as the “next-generation” optoelectronic materials because of the possibility of designing atomically thin devices with outstanding charact...

Thermally-activated delayed fluorescence (TADF) enables organic semiconductors with charge transfer (CT)-type excitons to convert dark triplet states into bright singlets via a reverse intersystem crossing (rISC) process. Here, we consider the role of the dielectric environment in a range of TADF materials with varying changes in dipole moment upon optical excitation. In a dipolar reference emitter, TXO-TPA, environmental reorganisation after excitation in both solution and doped films triggers the formation of the full CT product state. This lowers the singlet excitation energy by 0.3 eV and minimises the singlet-triplet energy gap ({\Delta}EST). Using impulsive Raman measurements, we observe the emergence of two (reactant-inactive) modes at 412 and 813 cm-1 as a vibrational fingerprint of the CT product. In contrast, the dielectric environment plays a smaller role in the electronic excitations of a less dipolar material, 4CzIPN. Quantum-chemical calculations corroborate the appearance of these new product modes in TXO-TPA and show that the dynamic environment fluctuations are large compared to {\Delta}EST. The analysis of the energy-time trajectories and the corresponding free energy functions reveals that the dielectric environment significantly reduces the activation energy for rISC, thus increasing the rISC rate by up to three orders of magnitude when compared to a vacuum environment., Comment: 67 pages, 7 main-text figures

We present an alternative, memory-efficient, Schmidt decomposition-based description of the inherently bipartite restricted active space (RAS) scheme, which can be implemented effortlessly within the density matrix renormalization group (DMRG) method via the dynamically extended active space procedure. Benchmark calculations are compared against state-of-the-art results of C$_2$ and Cr$_2$, which are notorious for their multi-reference character. Our results for ground and excited states together with spectroscopic constants demonstrate that the proposed novel approach, dubbed as DMRG-RAS, which is variational and free of uncontrolled method errors, has the potential to outperfom conventional methods for strongly correlated molecules., Comment: 11 pages, 4 figures

With the surge of interest in multi-resonant thermally activated delayed fluorescent (MR-TADF) materials it is important that there exist computational methods to accurately model their excited states. Here, building on our previous work, we demonstrate how the Spin-Component Scaling second-order approximate Coupled-Cluster (SCS-CC2), a wavefunction-based method, is robust at predicting the ΔEST (i.e., the energy difference between the lowest singlet and triplet excited states) of a large number of MR-TADF materials, with a mean average deviation (MAD) of 0.04 eV compared to experimental data. Time-Dependent Density Functional Theory calculations with the most common DFT functionals as well as the consideration of the Tamm-Dancoff approximation (TDA) consistently predict a much larger ΔEST owing to the absence of an explicit account of double (or higher order) excitations. This contribution is key in order to describe more precisely the Coulomb correlation that results in a stabilization of the S1 state. We also employed SCS-CC2 to evaluate donor-acceptor systems that contain a MR-TADF moiety acting as the acceptor and show that the broad emission observed for some of these compounds arises from the solvent-promoted stabilization of a higher-lying charge transfer (CT) singlet state (S2). This work highlights the importance of using wavefunction methods in relation MR-TADF emitter design and associated photophysics.

Thermally activated delayed fluorescence enables organic semiconductors with charge transfer-type excitons to convert dark triplet states into bright singlets via reverse intersystem crossing. However, thus far, the contribution from the dielectric environment has received insufficient attention. Here we study the role of the dielectric environment in a range of thermally activated delayed fluorescence materials with varying changes in dipole moment upon optical excitation. In dipolar emitters, we observe how environmental reorganization after excitation triggers the full charge transfer exciton formation, minimizing the singlet-triplet energy gap, with the emergence of two (reactant-inactive) modes acting as a vibrational fingerprint of the charge transfer product. In contrast, the dielectric environment plays a smaller role in less dipolar materials. The analysis of energy-time trajectories and their free-energy functions reveals that the dielectric environment substantially reduces the activation energy for reverse intersystem crossing in dipolar thermally activated delayed fluorescence emitters, increasing the reverse intersystem crossing rate by three orders of magnitude versus the isolated molecule.

Photon upconversion (PUC) via triplet–triplet annihilation (TTA) from near-infrared (NIR) to blue photons could have important applications especially to bioimaging and drug delivery accompanied by photochemical reaction. The fundamental challenges in achieving this has been the large anti-Stokes shift combined with the need to efficiently sensitize within the biological transparency window (700–900 nm). This calls for materials combinations with minimal energy losses during sensitization and minimal energy requirements to drive efficient TTA. Here, we demonstrate efficient PUC converting from NIR energy to blue photons using the commercially available material 9,10-bis[((triisopropyl)silyl)ethynyl]anthracene (TIPS-Ac) as the annihilator. With a conventional triplet sensitizing system, TIPS-Ac performed TTA with an efficiency of 77 ± 3% despite a relatively small driving force, compared to conventional TTA material converting from NIR to blue, for the TTA of less than 0.32 eV. Combined with Pt(II) meso-tetraphenyltetrabenzoporphine (PtTPBP), which is a heavy atom triplet sensitizer that directly generates triplets upon NIR photon excitation, the resulting system allowed for an anti-Stokes shift of 1.03 eV. Our results highlight the use of direct triplet generation via NIR excitation as a useful path to achieving large anti-Stokes shift and also show that high TTA efficiencies can be achieved even in the absence of large driving energies for the TTA process.

The chemical engineering of chalcogens' defects (either selenium or sulfur) on the surfaces of Nonprecious transition metal chalcogenides provides an effective route to enhance their electrocatalytic activity. Yet, the precise role of such defects during the OER is not fully understood, which in turn precludes an efficient optimization of their catalytic activity. Herein, CoNiSe2 film, representing a multi-transition metal selenide model with selenium defects, is electro-deposited on a carbon cloth to investigate and optimize the intrinsic and dynamic behavior of selenium vacancies during the OER process. Interestingly, the defective CoNiSe2 with the optimized amount of selenium vacancies exhibits an advanced OER performance, including low overpotential (252 mV at 10 mA cm−2) and high stability for 30 h. The ex-situ XPS and Raman spectroscopies also indicate that the optimized amount of selenium vacancies can facilitate the pre-oxidation of Co and Ni sites. The latter leads to a rapid adsorption of OH− ions and a further stabilization of Co/NiOOH, which in turn mediates the efficiency of OER. The density functional theory (DFT) calculations show that the introduction of a Se-vacancy on CoNiSe2 surface enables to adjust the changes in Gibbs free energy between different OER steps and thereby, significantly reduce the overpotential.

Large contact resistance at metal-substrate/ZnO heterostructure interfaces prevents achieving highly efficient device performance. Herein, we present a systematic study on the effect of Ni-doping in the reduction of the Schottky contact barrier at metal-substrate/ZnO heterostructure. To this end, Ni-doped zinc oxide (Ni:ZnO) thin films were deposited on glass substrate by a spray technique with different Ni-doping concentrations. X-ray Diffraction and Atomic Force Microscopy (AFM) measurements showed that Ni-doping enhances the surface uniformity as compared to the undoped-ZnO films and significantly decreases the roughness (RMS) from 35 to 17 nm. Conductive Atomic Force Microscopy (C-AFM) with a Bruker's platinum coated probe (Pt-Ir) tip results in the stabilization of a p-type Schottky contact with a small height barrier of ~0.4 eV, which is among the smallest values reported in literature for ZnO thin films. Our first principle calculations, which are based on the relative alignment of the band edges of the components, also confirm the reduction in the Schottky barrier height by Ni-doping in line with the experimental tendency. Both experimental and theoretical results provide a robust evidence of the potential of stabilization of a small p-type Schottky contact at metallic-substrate/ZnO interface through a Ni-doping.

The use of non-fullerene acceptors (NFAs) in organic solar cells has led to power conversion efficiencies as high as 18%1. However, organic solar cells are still less efficient than inorganic solar cells, which typically have power conversion efficiencies of more than 20%2. A key reason for this difference is that organic solar cells have low open-circuit voltages relative to their optical bandgaps3, owing to non-radiative recombination4. For organic solar cells to compete with inorganic solar cells in terms of efficiency, non-radiative loss pathways must be identified and suppressed. Here we show that in most organic solar cells that use NFAs, the majority of charge recombination under open-circuit conditions proceeds via the formation of non-emissive NFA triplet excitons; in the benchmark PM6:Y6 blend5, this fraction reaches 90%, reducing the open-circuit voltage by 60 mV. We prevent recombination via this non-radiative channel by engineering substantial hybridization between the NFA triplet excitons and the spin-triplet charge-transfer excitons. Modelling suggests that the rate of back charge transfer from spin-triplet charge-transfer excitons to molecular triplet excitons may be reduced by an order of magnitude, enabling re-dissociation of the spin-triplet charge-transfer exciton. We demonstrate NFA systems in which the formation of triplet excitons is suppressed. This work thus provides a design pathway for organic solar cells with power conversion efficiencies of 20% or more. A substantial pathway for energy loss in organic solar cells may be suppressed by engineering hybridization between non-fullerene acceptor triplet excitons and spin-triplet charge transfer excitons.

Stacked two-dimensional (2D) heterostructures are evolving as the "next-generation" optoelectronic materials because of the possibility of designing atomically thin devices with outstanding characteristics. However, most of the existing 2D heterostructures are governed by weak van der Waals interlayer interactions that, as often is the case, exert limited impact on the resulting properties of heterostructures relative to their constituting components. In this work, we investigate the optoelectronic properties of a novel class of 2D MP

Transition to turbulence dramatically alters the properties of fluid flows. In most canonical shear flows, the laminar flow is linearly stable and a finite-amplitude perturbation is necessary to trigger transition. Controlling transition to turbulence is achieved via the broadening or narrowing of the basin of attraction of the laminar flow. In this paper, a novel methodology to assess the robustness of the laminar flow and the efficiency of control strategies is introduced. It relies on the statistical sampling of the phase-space neighbourhood around the laminar flow in order to assess the transition probability of perturbations as a function of their energy. This approach is applied to a canonical flow (plane Couette flow) and provides invaluable insight: in the presence of the chosen control, transition is significantly suppressed whereas plausible scalar indicators of the nonlinear stability of the flow, such as the edge-state energy, do not provide conclusive predictions. The methodology presented here in the context of transition to turbulence is applicable to any nonlinear system displaying finite-amplitude instability.

Photoswitchable self-assembled monolayers (SAMs) in contact with a conductive or semiconductive layer can be used to remotely trigger changes in electrical current using light. In this study, we apply full-atomistic simulations to assess the changes in electronic structure and charge-transport properties of a graphene sheet in contact with an amorphous silica dielectric decorated by an azobenzene SAM. The simulations explicitly account for the structural and electrostatic disorder sourced by the dielectric, which turns out to be weakly affected by photoisomerization and spatially correlated over a length scale of 4–5 nm. Most interestingly, by combining large-scale (tight binding) density functional theory with Kubo–Greenwood quantum transport calculations, we predict that the trans-cis isomerization should induce a shift in surface electrostatic potential by a few tenths of a volt, accompanied by a variation in conductivity by a factor of about 3.

Authors thank the Natural Sciences and Engineering Research Council of Canada and the Leverhulme Trust (RPG-2016-47) for financial support. J. A. Knöller thanks the Baden Württemberg Stiftung for a scholarship as well as Queen's and Stuttgart University for enabling this research through the Dual Degree Masters program. New symmetric and unsymmetric B,N,B-doped benzo[4]helicenes 3 - 6a/b have been achieved in good yields, using a three-step process, starting from N(tolyl)3 in a highly divergent manner (7 examples). A borinic acid functionalized 1,4-B,N- anthracene 1 was found to display unprecedented reactivity, acting as a convenient and highly effective precursor for selective formation of bromo substituted B,N,B-benzo[4]helicenes 2a/2b via intramolecular borylation and sequential B-Mes bond cleavage in presence of BBr3. Subsequent reaction of 2a/2b with Ar-Li provided a highly effective toolbox for the preparation of symmetrically/unsymmetrically functionalized B,N,B-helicenes. Their high photoluminescence quantum yields along with the small ∆EST suggest the potential as thermally activated delayed fluorescence (TADF) emitters for organic light-emitting diodes (OLEDs). Postprint

The generation, control and transfer of triplet excitons in molecular and hybrid systems is of great interest owing to their long lifetime and diffusion length in both solid-state and solution phase systems, and to their applications in light emission1, optoelectronics2,3, photon frequency conversion4,5 and photocatalysis6,7. Molecular triplet excitons (bound electron-hole pairs) are 'dark states' because of the forbidden nature of the direct optical transition between the spin-zero ground state and the spin-one triplet levels8. Hence, triplet dynamics are conventionally controlled through heavy-metal-based spin-orbit coupling9-11 or tuning of the singlet-triplet energy splitting12,13 via molecular design. Both these methods place constraints on the range of properties that can be modified and the molecular structures that can be used. Here we demonstrate that it is possible to control triplet dynamics by coupling organic molecules to lanthanide-doped inorganic insulating nanoparticles. This allows the classically forbidden transitions from the ground-state singlet to excited-state triplets to gain oscillator strength, enabling triplets to be directly generated on molecules via photon absorption. Photogenerated singlet excitons can be converted to triplet excitons on sub-10-picosecond timescales with unity efficiency by intersystem crossing. Triplet exciton states of the molecules can undergo energy transfer to the lanthanide ions with unity efficiency, which allows us to achieve luminescent harvesting of the dark triplet excitons. Furthermore, we demonstrate that the triplet excitons generated in the lanthanide nanoparticle-molecule hybrid systems by near-infrared photoexcitation can undergo efficient upconversion via a lanthanide-triplet excitation fusion process: this process enables endothermic upconversion and allows efficient upconversion from near-infrared to visible frequencies in the solid state. These results provide a new way to control triplet excitons, which is essential for many fields of optoelectronic and biomedical research.

International audience; Structural defects are known to worsen electrical and optical properties of 2D materials. Transition metal dichalcogenides (TMDs) are prone to chalcogen vacancies and molecular functionalization of these vacancies offers a powerful strategy to engineer the crystal structure by healing such defects. This molecular approach can effectively improve physical properties of 2D materials and optimize the performance of 2D electronic devices. While this strategy has been successfully exploited to heal vacancies in sulfides, its viability on selenides based TMDs has not yet been proven. Here, by using thiophenol molecules to functionalize monolayer WSe2 surface containing Se vacancies, it is demonstrated that the defect healing via molecular approach not only improves the performance of WSe2 transistors (> tenfold increase in the current density, the electron mobility, and the Ion/Ioff ratio), but also enhances the photoluminescence properties of monolayer WSe2 flakes (threefold increase of photoluminescence intensity at room temperature). Theoretical calculations elucidate the mechanism of molecular passivation, which originates from the strong interaction between thiol functional group at Se vacancy sites and neighboring tungsten atoms. These results demonstrate that the molecular approach represents a powerful strategy to engineer WSe2 transistors and optimize their optical properties, paving the way toward high‐performance 2D (opto)electronic devices.

The generation, control and transfer of triplet excitons in molecular and hybrid systems is of great interest owing to their long lifetime and diffusion length in both solid-state and solution phase systems, and to their applications in light emission

Using the density functional theory, we systemically investigate the structural and electronic properties of SnP3 monolayer and bilayer adsorbed on metallic substrates, including graphene (Gr), Cu(111), and Ni(111). Our main findings indicate that the SnP3 layers develop a stack with graphene through the van der Waals interaction, in contrast to strongly chemical binding, observed with the transition metals, such as Cu(111) and Ni(111). Upon building Gr/SnP3 heterostructures, we found that the Dirac cone in graphene is well preserved, forming an n-type Schottky contact with a small Schottky Barrier Height (SBH), which in turn is very sensitive to the external conditions. By reducing the interfacial distance between Gr and SnP3 layers, a Schottky contact to a p-type ohmic contact transition can be effectively realized, while an n-type ohmic contact can be generated by applying a finite external electrical field. By contrast, strong interaction with Ni(111) and Cu(111) seriously disrupts the electronic structure of SnP3 layers, that can be avoided by introducing graphene or h-BN as buffer layers between SnP3 layers and transition metal substrates. Furthermore, increasing the layer number of the inserted Gr or BN, up to bilayers, is found to be enough to achieve an n-type ohmic contact. These findings provide useful insights for designing novel SnP3-based field effect transistors (FETs) devices with n- or p-type ohmic contacts.

This work is funded by the EC through the Horizon 2020 Marie Sklodowska-Curie ITN project TADFlife. The St Andrews team would also like to thank the Leverhulme Trust (RPG-2016- 047) and EPSRC (EP/P010482/1) for financial support. Computational resources have been provided by the Consortium des Équipements de Calcul Intensif (CÉCI), funded by the Fonds de la Recherche Scientifiques de Belgique (F.R.S.-FNRS) under Grant No. 2.5020.11, as well as the Tier-1 supercomputer of the Fédération Wallonie-Bruxelles, infrastructure funded by the Walloon Region under the grant agreement n1117545. AP acknowledges the financial support from the Marie Curie Fellowship (MILORD project, N°. 748042). DB is a FNRS Research Director. We thank Franck-Julian Kahle for support with data analysis. A new design strategy is introduced to address a persistent weakness with resonance thermally activated delayed fluorescence (R-TADF) emitters to reduce aggregation-caused quenching effects, which we identify as one of the key limiting factors. The emitter Mes3DiKTa shows an improved photoluminescence quantum yield of 80% compared to 75% for the reference DiKTa in 3.5 wt% mCP. Importantly, emission from aggregates, even at high doping concentrations, is eliminated and aggregation-caused quenching is strongly curtailed. For both molecules, triplets are almost quantitatively upconverted into singlets in electroluminescence, despite a significant (~0.21 eV) singlet-triplet energy gap (ΔEST), in line with correlated quantum-chemical calculations, and a slow reverse intersystem crossing. We speculate that the lattice stiffness responsible for the narrow fluorescence and phosphorescence emission spectra also protects the triplets against non-radiative decay. An improved EQEmax of 21.1% for Mes3DIKTa compared to the parent DiKTa (14.7%) and, importantly, reduced efficiency roll- off compared to literature resonance TADF OLEDs, shows the promise of this design strategy for future design of R-TADF emitters for OLED applications. Publisher PDF

Unsteady spatially localized states such as puffs, slugs or spots play an important role in transition to turbulence. In plane Couette flow, steady versions of these states are found on two intertwined solution branches describing homoclinic snaking (Schneider et al., Phys. Rev. Lett., vol. 104, 2010, 104501). These branches can be used to generate a number of spatially localized initial conditions whose transition can be investigated. From the low Reynolds numbers where homoclinic snaking is first observed ($Re) to transitional ones ($Re\approx 325$), these spatially localized states traverse various regimes where their relaminarization time and dynamics are affected by the dynamical structure of phase space. These regimes are reported and characterized in this paper for a $4\unicode[STIX]{x03C0}$-periodic domain in the streamwise direction as a function of the two remaining variables: the Reynolds number and the width of the localized pattern. Close to the snaking, localized states are attracted by spatially localized periodic orbits before relaminarizing. At larger values of the Reynolds number, the flow enters a chaotic transient of variable duration before relaminarizing. Very long chaotic transients ($t>10^{4}$) can be observed without difficulty for relatively low values of the Reynolds number ($Re\approx 250$).

Polymer electronics has the power of revolutionizing the world of printable flexible electronics through reducing the production costs of large-scale nanoelectronic applications. However, performance and stability of such devices are still generally low compared to their inorganic counterparts, rendering the development of novel multiscale experimental- and theoretical-investigation techniques necessary, to increase the understanding of the causes for performance losses under operation conditions. To this end, we introduce in this paper a novel parametrized field-based multiscale algorithm, which permits to study effects of chemical details, like e.g. inter-mixing of the donor- and acceptor-components and/or photodegradation, on the photovoltaic performance of polymer-based solar-cell nanodevices with sizes of technological relevance. By comparing its results with the ones of atomistic particle-based solar-cell calculations, we demonstrate that the parametrized field-based approach provides a reasonable value for the internal quantum efficiency of a polyfluorene-based blend heterojunction, used for parametrization of the exciton dissociation and charge transfer rates. Moreover, we show that its combination with a modified version of the transfer-matrix method allows the inclusion of the influence of the optical absorption of the individual device components, like e.g. the electrodes and/or nanophases from the photoactive layer, into the algorithm. This full-device solar-cell approach enables us to determine values for the external quantum efficiency of several polymer blend morphologies in good agreement with experimental measurements. Finally, the latter study also reveals, in concordance with experimental observations, that reducing charge-carrier losses is more important than reducing exciton- and photon-losses for optimizing the performance of solar-cell devices.

The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and, together with spin statistics and structural relaxation effects, rationalize the possibility for room-temperature dopant ionization. Our findings reconcile available experimental data, shedding light on the partial vs. full charge transfer scenario discussed in the literature, and question the relevance of the standard classification in shallow or deep impurity levels prevailing for inorganic semiconductors., Keywords: Organic semiconductors, Molecular doping, Approximation methods for many-body systems, GW formalism, Bethe-Salpeter equation

Irradiation of 2D sheets of transition metal dichalcogenides with ion beams has emerged as an effective approach to engineer chemically active defects in 2D materials. In this context, argon-ion bombardment has been utilized to introduce sulfur vacancies in monolayer molybdenum disulfide (MoS2). However, a detailed understanding of the effects of generated defects on the functional properties of 2D MoS2 is still lacking. In this work, the correlation between critical electronic device parameters and the density of sulfur vacancies is systematically investigated through the fabrication and characterization of back-gated monolayer MoS2 field-effect transistors (FETs) exposed to a variable fluence of low-energy argon ions. The electrical properties of pristine and ion-irradiated FETs can be largely improved/recovered by exposing the devices to vapors of short linear thiolated molecules. Such a solvent-free chemical treatment—carried out strictly under inert atmosphere—rules out secondary healing effects induced by oxygen or oxygen-containing molecules. The results provide a guideline to design monolayer MoS2 optoelectronic devices with a controlled density of sulfur vacancies, which can be further exploited to introduce ad hoc molecular functionalities by means of thiol chemistry approaches.

Polymer solar cells possess a promising perspective for generating renewable energy at affordable costs, provided their performance and durability can be improved considerably. To this end, several experimental and theoretical techniques have been devised recently, establishing a direct link between local morphology, local opto-electronic properties and device performance. However, their reliability is still unclear to this day. Here, we demonstrate by using a recently developed particle-based multiscale solar cell approach and comparing its results with the ones of a field-based solar cell algorithm that inter-mixing of the electron-donor(D)- and -acceptor(A)-type of segments in a lamellar-like poly(9,9’-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylene-diamine)-poly(9,9'-dioctylfluorene-co-benzothiadiazole) (PFB-F8BT) blend causes that the major part of the charge generation and charge transport takes place inside the nanophases of the nanostructured polymer solar cells in agreement with recent experimental measurements and not, as commonly believed, at the visible domain boundaries of the DA interface. Moreover, we show that the contribution of the exciton dissociation efficiency to the internal quantum efficiency, due to inter-monomeric mixing, is significant and cannot be neglected in simulation studies at the nanoscale. Finally, we demonstrate that keto-defects on the fluorene moiety of the F8BT phase, induced by photo-oxidation, causes a simultaneous increase of the intra-chain contribution and decrease of the inter-chain contribution to the electronic current density, whereas in the reduced form the difference between both contributions is significantly smaller. This antagonistic effect leads to keto-induced electron trapping, resulting in a deteriorated electronic transport efficiency in devices with a photo-oxidized F8BT phase.

Tapered block copolymers offer an exciting opportunity to tailor the interfacial region between different components by conserving their phase-separated mesoscale structure, which enable the generation of polymer systems with the desired spatio-dynamic properties. Here, we explore their usefulness for optimizing the photovoltaic performance of polymer bulk heterojunctions. To this end, we apply a recently developed particle-based multiscale solar-cell algorithm and investigate the effect of random tapering at the chemical junctions between the electron-donor- (D) and electron-acceptor- (A) blocks on the photovoltaic properties of various lamellar-like polyfluorene-based block-copolymer systems. Our simulation results reveal that introducing a tapered middle block with optimal length leads to a significant increase of the exciton dissociation efficiency, but deteriorates the charge transport efficiency only moderately. This results in a gain of the internal quantum efficiency from 25 up to 39% by increasing the thickness of the active layer of the solar cell from 10 up to 50 nm in direction to the DA interface.

Theoretical modeling of the charge transport in organic materials in the diabatic representation requires an accurate evaluation of the charge transfer integrals. In this paper, we show that the coupled cluster and MBPT(2) approaches are the methods of choice for performing the benchmark calculations of this quantity, in contrast to some recently published results. We demonstrate that a proper treatment of the involved ionized states, achieved by applying the continuum-orbital strategy, reduces the error of the transfer integrals by one order of magnitude, which in the case of the CC2 method corresponds to a lowering of the mean relative unsigned error (MRUE) from 39.9 to 3.8%. Moreover, we extend the application of the continuum-orbital strategy to the TDDFT method, and show that it leads to a dramatic improvement of the description of ionized states compared to the conventional TDDFT approach, characterized by lowering of MRUE from 209.0 to 24.5%.

The charge transfer integral is a key parameter required by various theoretical models to describe charge transport properties, e.g., in organic semiconductors. The accuracy of this important property depends on several factors, which include the level of electronic structure theory and internal simplifications of the applied formalism. The goal of this paper is to identify the performance of various approximate approaches of the latter category, while using the high level equation-of-motion coupled cluster theory for the electronic structure. The calculations have been performed on the ethylene dimer as one of the simplest model systems. By studying different spatial perturbations, it was shown that while both energy split in dimer and fragment charge difference methods are equivalent with the exact formulation for symmetrical displacements, they are less efficient when describing transfer integral along the asymmetric alteration coordinate. Since the “exact” scheme was found computationally expensive, we examine the possibility to obtain the asymmetric fluctuation of the transfer integral by a Taylor expansion along the coordinate space. By exploring the efficiency of this novel approach, we show that the Taylor expansion scheme represents an attractive alternative to the “exact” calculations due to a substantial reduction of computational costs, when a considerably large region of the potential energy surface is of interest. Moreover, we show that the Taylor expansion scheme, irrespective of the dimer symmetry, is very accurate for the entire range of geometry fluctuations that cover the space the molecule accesses at room temperature.

Both the device composition and fabrication process are well-known to crucially affect the power conversion efficiency of polymer solar cells. Major advances have recently been achieved through the development of novel device materials and inkjet printing technologies, which permit to improve their durability and performance considerably. In this work, we demonstrate the usefulness of a recently developed field-based multiscale solar-cell algorithm to investigate the influence of the material characteristics, like, e.g., electrode surfaces, polymer architectures, and impurities in the active layer, as well as post-production treatments, like, e.g., electric field alignment, on the photovoltaic performance of block-copolymer solar-cell devices. Our study reveals that a short exposition time of the polymer bulk heterojunction to the action of an external electric field can lead to a low photovoltaic performance due to an incomplete alignment process, leading to undulated or disrupted nanophases. With increasing exposition time, the nanophases align in direction to the electric field lines, resulting in an increase of the number of continuous percolation paths and, ultimately, in a reduction of the number of exciton and charge-carrier losses. Moreover, we conclude by modifying the interaction strengths between the electrode surfaces and active layer components that a too low or too high affinity of an electrode surface to one of the components can lead to defective contacts, causing a deterioration of the device performance. Finally, we infer from the study of block-copolymer nanoparticle systems that particle impurities can significantly affect the nanostructure of the polymer matrix and reduce the photovoltaic performance of the active layer. For a critical volume fraction and size of the nanoparticles, we observe a complete phase transformation of the polymer nanomorphology, leading to a drop of the internal quantum efficiency. For other particle-numbers and -sizes, we observe only a local perturbation of the nanostructure, diminishing the number of continuous percolation paths to the electrodes and, therefore, reducing the device performance. From these investigations, we conclude that our multiscale solar-cell algorithm is an effective approach to investigate the impact of device materials and post-production treatments on the photovoltaic performance of polymer solar cells.

Flexible photovoltaic devices possess promising perspectives in opto-electronic technologies, where high mobility and/or large-scale applicability are important. However, their usefulness in such applications is currently still limited due to the low level of optimization of their performance and durability. For the improvement of these properties, a better understanding and control of small-scale annihilation phenomena involved in the photovoltaic process, such as exciton loss and charge carrier loss, is necessary, which typically implicates multiple length- and time-scales. Here, we study the causes for their occurrence on the example of nanostructured diblock- and triblock-copolymer systems by making use of a novel solar-cell simulation algorithm and explore new routes to optimize their photovoltaic properties. A particular focus is set on the investigation of exciton and charge carrier loss phenomena and their dependence on the inter-monomeric interaction strength, chain architecture, and external mechanical loading. Our simulation results reveal that in the regime from low up to intermediate χ-parameters an increasing number of continuous percolation paths is created. In this parameter range, the internal quantum efficiency (IQE) increases up to a maximum, characterized by a minimum in the number of charge losses due to charge recombination. In the regime of high χ-parameters both block-copolymer systems form nanostructures with a large number of bottlenecks and dead ends. These lead to a large number of charge losses due to charge recombination, charge trapping, and a deteriorated exciton dissociation, resulting in a significant drop in the IQE. Moreover, we find that the photovoltaic performance of the triblock-copolymer material decreases with increasing mechanical loading, caused by a growing number of charge losses due to charge recombination and charge accumulation. Finally, we demonstrate that the process of charge trapping in defects can be reversed by changing the polarity of the electrodes, which confers these materials the ability to be used as charge storage media.

The photoelectric power conversion efficiency of polymer solar cells is till now, compared to conventional inorganic solar cells, still relatively low with maximum values ranging from 7% to 8%. This essentially relates to the existence of exciton and charge carrier loss phenomena, reducing the performance of polymer solar cells significantly. In this paper we introduce a new computer simulation technique, which permits to explore the causes of the occurrence of such phenomena at the nanoscale and to design new photovoltaic materials with optimized opto-electronic properties. Our approach consists in coupling a mesoscopic field-theoretic method with a suitable dynamic Monte Carlo algorithm, to model the elementary photovoltaic processes. Using this algorithm, we investigate the influence of structural characteristics and different device conditions on the exciton generation and charge transport efficiencies in case of a novel nanostructured polymer blend. More specifically, we find that the disjunction of continuous percolation paths leads to the creation of dead ends, resulting in charge carrier losses through charge recombination. Moreover, we observe that defects are characterized by a low exciton dissociation efficiency due to a high charge accumulation, counteracting the charge generation process. From these observations, we conclude that both the charge carrier loss and the exciton loss phenomena lead to a dramatic decrease in the internal quantum efficiency. Finally, by analyzing the photovoltaic behavior of the nanostructures under different circuit conditions, we demonstrate that charge injection significantly determines the impact of the defects on the solar cell performance.

The nonlinear robustness of laminar plane Couette flow is considered under the action of in-phase spanwise wall oscillations by computing properties of the edge of chaos, i.e., the boundary of its basin of attraction. Three measures are used to quantify the chosen control strategy on laminar-to-turbulent transition: the kinetic energy of edge states (local attractors on the edge of chaos), the form of the minimal seed (least energetic perturbation on the edge of chaos), and the laminarization probability (the probability that a random perturbation from the laminar flow of given kinetic energy will laminarize). A novel Bayesian approach is introduced to enable the accurate computation of the laminarization probability at a fraction of the cost of previous methods. While the edge state and the minimal seed provide useful information about the dynamics of transition to turbulence, neither measure is particularly useful to judge the effectiveness of the control strategy since they are not representative of the global geometry of the edge. In contrast, the laminarization probability provides global information about the edge and can be used to evaluate the control effectiveness by computing a laminarization score (the expected laminarization probability) and the associated expected dissipation rate of the controlled flow. These two quantities allow for the determination of optimal control parameter values subject to desired constraints. The results discussed in the paper are expected to be applied to a wide range of transitional flows and control strategies aimed at suppressing or triggering transition to turbulence., Comment: 29 pages, 14 figures