1. Terahertz Emission Enhancement of i-/n-Gallium Arsenide Thin Film on a Porous Silicon Distributed Bragg Reflector designed at 800nm
- Author
-
Arnel Salvador, Gerald Angelo Catindig, Elmer Estacio, John Daniel Vasquez, Karl Cedric Gonzales, Ameera Jose, Miguel Bacaoco, Arven Cafe, Armando Somintac, Anthony Montecillo, Alexander De Los Rcyes, Joybelle Lopez, and Maria Angela Faustino
- Subjects
010302 applied physics ,Materials science ,Silicon ,business.industry ,Terahertz radiation ,Physics::Optics ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Porous silicon ,Distributed Bragg reflector ,01 natural sciences ,Gallium arsenide ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Semiconductor ,chemistry ,0103 physical sciences ,Optoelectronics ,Thin film ,0210 nano-technology ,business - Abstract
A semiconductor terahertz (THz) emitter based on an active i-/n-GaAs layer integrated on a porous silicon (PSi) distributed Bragg reflector (PSi-DBR) is presented. It is specifically designed for the use of a very thin GaAs film of thickness less than the penetration depth of the 800nm laser beam $(\sim 1\mu \mathrm{m})$ . The DBR acts as a reflecting substrate for the excess transmitted photoexcitation. Using a 550nm-thick GaAs, the novel design exhibited a 67% increase in peak-to peak THz signal compared to a similar GaAs on silicon (Si) substrate. The enhancement can be attributed to the increased optical absorption and multiple reflections in the active layer.
- Published
- 2018